Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MBM200JS12EW

Renesas Electronics

1470 W

200 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJP5001APP-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

45 W

300 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

17 V

2.7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

600 ns

RJH1DF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.55 V

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

136 ns

MBM50F12

Renesas Electronics

50 A

3 V

1

Insulated Gate BIP Transistors

1200 V

20 V

MBN600GR12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

750 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, HIGH SPEED, LOW NOISE

350 ns

RJH60M2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

CT20VM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

RJP1CS23DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJQ6022DPM

Renesas Electronics

N-CHANNEL

NO

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

RJH60F3DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

MBM150GR6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

520 W

150 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

2

550 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

300 ns

MBM200GS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

200 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

300 ns

RJP60D0DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

140 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

Not Qualified

55 ns

RJP1CS06DWT-80#X0

Renesas Electronics

N-CHANNEL

200 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM200GR12

Renesas Electronics

NO

1130 W

200 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MBN1200D33C

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3500 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY

2900 ns

MBN400GR12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

700 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

RJP30E3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

160 ns

RJH60D3DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJP65M05DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP4007ANS-00-Q6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

CY20AAJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

130 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

CY25CAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJP60F0DPE-00-J3

Renesas Electronics

N-CHANNEL

YES

122 W

50 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

RJH1CD7DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

70 ns

RJQ6008BDPM-00#T0

Renesas Electronics

RJP65S08DWT-80#X0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP65S03DWA-80#W0

Renesas Electronics

N-CHANNEL

60 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP65S08DWT-00#X0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP6085DPN-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

90 ns

RJP1CS26DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP1CS03DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBM100GS12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

100 A

POWER CONTROL

2

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJQ6015DPM-00#T0

Renesas Electronics

50 W

37 A

2.2 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN300F12

Renesas Electronics

300 A

3 V

1

Insulated Gate BIP Transistors

1200 V

20 V

RJP4009ANS-01#Q5

Renesas Electronics

CY20AAJ-8H-T13#F10

Renesas Electronics

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1.5 V

NOT SPECIFIED

NOT SPECIFIED

RJP60D0DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

55 ns

RJH30H1DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

100 ns

RJH60F0DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

201.6 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

138 ns

CY25CAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJH60A85RDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

39.7 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

MBN600C33A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5800 W

600 A

UNSPECIFIED

POWER CONTROL

5.5 V

UNSPECIFIED

RECTANGULAR

1

4100 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, HIGH SPEED, LOW NOISE

2600 ns

CY25BAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-G8

Not Qualified

RJH30H2DPK-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

120 ns

RJH60D7DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

155 ns

RJP63K2DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

80 ns

2SH21

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.