Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MBM150BS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH60D7ADPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

105 ns

RJH60M2DPP-M0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27.2 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

45 ns

RJH60A83RDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

52 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

RJP4003ASA-0-Q0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

1

Not Qualified

260

RJP1CS28DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

GN6030C

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

400 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

MBM200JS12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

200 A

POWER CONTROL

2

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

CY20AAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

130 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJP1CS25DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH60V1BDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

52 W

16 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP60F4DPQ-A0#T0

Renesas Electronics

N-CHANNEL

NO

235.8 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

RJH60M1DPP-M0

Renesas Electronics

N-CHANNEL

NO

20.8 W

16 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

GN12030E

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

RJH1CV6DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

290 W

60 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN400GS12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP1CS25DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBB75GS12AW

Renesas Electronics

450 W

75 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBN400C33

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

3300 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

1200 ns

MBM100AS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

100 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP65D03DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBM400CS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJP6065DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5.5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

RJQ6003DPM-00#T0

Renesas Electronics

N-CHANNEL

NO

50 W

40 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

MBN200A6

Renesas Electronics

300 A

2.5 V

1

Insulated Gate BIP Transistors

600 V

20 V

CY20AAJ-8H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

MBM400JS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJP30H2DPK-M0#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

35 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

120 ns

CT60AM-18F#F00

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

60 A

PLASTIC/EPOXY

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

150 Cel

SILICON

900 V

-40 Cel

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

150 ns

GN6050E

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

50 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

800 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

MBM200GS12AW

Renesas Electronics

1000 W

200 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBN600GR12

Renesas Electronics

NO

3570 W

600 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X4

Not Qualified

RJH60F5DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

198 ns

RJP1CS08DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBB50AS6

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

50 A

POWER CONTROL

6

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP1CS24DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP65T43DPQ-A0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

MBM150A6

Renesas Electronics

150 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

MBM75AS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH60A85RDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

113 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

GN4014ZB4LM

Renesas Electronics

N-CHANNEL

YES

60 W

14 A

Insulated Gate BIP Transistors

150 Cel

370 V

20 V

2.2 V

RJH60F4DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

145 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

62 ns

RJH60D6DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

2SH20

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

36 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

RJH60D6DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

HGT1S0N35G3VLS

Renesas Electronics

MBB100GS12A

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

100 A

POWER CONTROL

6

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

2SH15

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.