Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJP1CS06DWA-80#W0

Renesas Electronics

N-CHANNEL

200 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP60D0DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE

YES

122 W

45 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJH60M6DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

298 W

80 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

CY25AAJ-8-T13

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

DUAL

R-PDSO-G8

Not Qualified

RJP65S08DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH60V1BDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

30 W

16 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60V3BDPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113 W

35 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

165 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

60 ns

CT60AM-18C

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

550 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

170 ns

MBM300GS6AW

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

800 W

300 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED, LOW NOISE

350 ns

MBM150F12

Renesas Electronics

150 A

3 V

1

Insulated Gate BIP Transistors

1200 V

20 V

RJP30H2DPK-M0-T2

Renesas Electronics

N-CHANNEL

NO

60 W

35 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

RJP1CS26DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH1CF4RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156.2 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

387 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

95 ns

RJP1CS01DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SH13

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

210 ns

RJH60A81RDPD-E0#J2

Renesas Electronics

N-CHANNEL

YES

29.4 W

10 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

MBM200A6

Renesas Electronics

200 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

CY20AAJ-8H#F00

Renesas Electronics

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1.5 V

NOT SPECIFIED

NOT SPECIFIED

RJP65S07DWA-80#W0

Renesas Electronics

N-CHANNEL

300 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

MBM300GR6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

930 W

300 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

2

750 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

MBM100F12

Renesas Electronics

100 A

3 V

1

Insulated Gate BIP Transistors

1200 V

20 V

CT30TM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

RJP4009ANS-01#Q6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

150 A

PLASTIC/EPOXY

9 V

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

-40 Cel

6 V

1.2 V

DUAL

R-PDSO-F8

NOT SPECIFIED

NOT SPECIFIED

RJH1CV5DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

245 W

50 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP65S05DWT-80#X0

Renesas Electronics

N-CHANNEL

150 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM100GR12

Renesas Electronics

NO

590 W

100 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

RJH60D2DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

22.5 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN1200E33D

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3000 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2400 ns

MBN1200C33

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

1200 A

POWER CONTROL

1

SILICON

3300 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

1200 ns

RJH60V2BDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

34 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM200JS12AW

Renesas Electronics

1470 W

200 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBN400AS6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

POWER CONTROL

1

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP65M05DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

CT35SM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

RJP1CS27DWA-80#W0

Renesas Electronics

N-CHANNEL

SINGLE

YES

300 A

UNSPECIFIED

POWER AMPLIFIER

2 V

NO LEAD

SQUARE

1

920 ns

5

UNCASED CHIP

175 Cel

SILICON

1250 V

30 V

6.8 V

UPPER

S-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

165 ns

RJH60F5DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

75 ns

RJH60M3DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

39.7 W

35 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH1CD5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

62 ns

RJH60D0DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

140 W

45 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

RJH1BF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

RJH1CV5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

66 ns

MBN1200GR12

Renesas Electronics

NO

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

7

FLANGE MOUNT

UPPER

R-PUFM-X7

Not Qualified

RJH60F6DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

138 ns

MBM200GS6AW

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED, LOW NOISE

300 ns

RJH60A01RDPD-E0#J2

Renesas Electronics

RJH60D7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

300 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

2SH17

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

RJH60F6BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

138 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.