Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
N-CHANNEL |
200 A |
Insulated Gate BIP Transistors |
150 Cel |
1250 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
122 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
298 W |
80 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
150 Cel |
SILICON |
400 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
30 W |
16 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
113 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
165 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
550 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
900 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
170 ns |
||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
800 W |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED, LOW NOISE |
350 ns |
||||||||||||||||||||||||
Renesas Electronics |
150 A |
3 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
60 W |
35 A |
Insulated Gate BIP Transistors |
150 Cel |
360 V |
30 V |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156.2 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
387 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
95 ns |
||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
75 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
210 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
29.4 W |
10 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
200 A |
3 V |
1 |
Insulated Gate BIP Transistors |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
300 A |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
930 W |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
750 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
350 ns |
||||||||||||||||||||||||
Renesas Electronics |
100 A |
3 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
150 A |
PLASTIC/EPOXY |
9 V |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
150 Cel |
SILICON |
400 V |
-40 Cel |
6 V |
1.2 V |
DUAL |
R-PDSO-F8 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
245 W |
50 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
150 A |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NO |
590 W |
100 A |
PLASTIC/EPOXY |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
22.5 W |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
1200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
3000 ns |
9 |
FLANGE MOUNT |
SILICON |
3300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
2400 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
1200 A |
POWER CONTROL |
1 |
SILICON |
3300 V |
ISOLATED |
Not Qualified |
HIGH SPEED, ULTRA SOFT FAST RECOVERY |
1200 ns |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
34 W |
25 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
1470 W |
200 A |
3.4 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
POWER CONTROL |
1 |
SILICON |
600 V |
ISOLATED |
Not Qualified |
HIGH SPEED, ULTRA SOFT FAST RECOVERY |
400 ns |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
300 A |
UNSPECIFIED |
POWER AMPLIFIER |
2 V |
NO LEAD |
SQUARE |
1 |
920 ns |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1250 V |
30 V |
6.8 V |
UPPER |
S-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260.4 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
75 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
39.7 W |
35 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260.4 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
62 ns |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
140 W |
45 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
6 V |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1100 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
136 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260.4 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
66 ns |
||||||||||||||||||||||
Renesas Electronics |
NO |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
7 |
FLANGE MOUNT |
UPPER |
R-PUFM-X7 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
297.6 W |
85 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
205 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
138 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED, LOW NOISE |
300 ns |
||||||||||||||||||||||||
Renesas Electronics |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
300 W |
90 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
50 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
297.6 W |
85 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
205 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
138 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.