Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
750 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
380 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
250 W |
75 A |
1000 ns |
400 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
5 V |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
150 A |
POWER CONTROL |
2 |
SILICON |
1200 V |
ISOLATED |
Not Qualified |
HIGH SPEED, ULTRA SOFT FAST RECOVERY |
350 ns |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
195 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
185 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
30 V |
5.9 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
400 A |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
20 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7.5 V |
|||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
200 A |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
60 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
200 A |
3 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
50 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
530 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
630 V |
30 V |
5.5 V |
SINGLE |
R-PSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
130 ns |
||||||||||||||||||||||||
Renesas Electronics |
50 A |
3 V |
1 |
Insulated Gate BIP Transistors |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
200 A |
POWER CONTROL |
6 |
SILICON |
600 V |
ISOLATED |
Not Qualified |
HIGH SPEED, ULTRA SOFT FAST RECOVERY |
350 ns |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
30 W |
Insulated Gate BIP Transistors |
150 Cel |
430 V |
33 V |
5.5 V |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
1.5 V |
|||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260.4 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
198 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
201.6 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
138 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
Renesas Electronics |
NO |
1470 W |
400 A |
PLASTIC/EPOXY |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
200 W |
75 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
150 A |
PLASTIC/EPOXY |
9 V |
FLAT |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
150 Cel |
SILICON |
400 V |
-40 Cel |
6 V |
1.2 V |
DUAL |
R-PDSO-F8 |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
517 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.34 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
244 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1250 V |
30 V |
7.1 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
58 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
227.2 W |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
409 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
116 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
C BEND |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.2 V |
DUAL |
R-PDSO-C8 |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
30 W |
35 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
30 V |
7 V |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
133 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
30 V |
5.9 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED, ULTRA SOFT FAST RECOVERY |
300 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
297.6 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
66 ns |
||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
178.5 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
157 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
122 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
600 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
HIGH SPEED, LOW NOISE |
400 ns |
||||||||||||||||||||||||
Renesas Electronics |
NO |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
7 |
FLANGE MOUNT |
UPPER |
R-PUFM-X7 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
113 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
45 ns |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
140 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
100 A |
Insulated Gate BIP Transistors |
150 Cel |
650 V |
30 V |
6.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
50 W |
10 A |
300 ns |
350 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
5 V |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
200 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.