Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJH60F6DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

138 ns

RJP1CS10DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBN1200D33A

Renesas Electronics

12000 W

1200 A

5 V

1

Insulated Gate BIP Transistors

125 Cel

3300 V

20 V

RJH60M7DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

300 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

RJH60D2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJP5001APP-M0#T2

Renesas Electronics

N-CHANNEL

NO

45 W

Insulated Gate BIP Transistors

150 Cel

500 V

17 V

2.7 V

CY25BAJ-8F-T23

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

TIN LEAD

DUAL

R-PDSO-G8

Not Qualified

e0

MBL800D33C

Renesas Electronics

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3500 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2900 ns

RJP1CS04DWT-80#X0

Renesas Electronics

N-CHANNEL

100 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM50AS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

50 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH60D7BDPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

300 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

RJH1BF6RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

289 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

93 ns

RBN25H125S1FPQ-A0

Renesas Electronics

RJP65T43DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

68.8 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

51 ns

MBM150GS6AW

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 W

150 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED, LOW NOISE

300 ns

RJP1CS05DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

CT20AS-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30E3DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

160 ns

RJP60V0DPM-80#T2

Renesas Electronics

N-CHANNEL

NO

60 W

45 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

CT90AM-18

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

150 ns

RJH1BF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

RJP1CS04DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

HGT1S0N35G3VL

Renesas Electronics

MBN1200D25B

Renesas Electronics

N-CHANNEL

COMPLEX

NO

12000 W

1200 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

3

4400 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2500 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2700 ns

RJH60F3DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH65T14DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

68 ns

MBB75A6

Renesas Electronics

75 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

RJH60D1DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJP63K2DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

80 ns

MBM75GS12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

2

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJH1CF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

MBM150GR12

Renesas Electronics

NO

830 W

150 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

RJH1CF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

CT20TM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

RJP63K2DPK-M0-T0

Renesas Electronics

N-CHANNEL

NO

60 W

35 A

Insulated Gate BIP Transistors

150 Cel

630 V

30 V

5 V

RJH60D2DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJP4010AGE-00#P5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-C8

RJH60D7DPK

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

106 ns

RJH1CF5RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192.3 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

102 ns

RJH60A81RDPD-A0#J2

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP60D0DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

2SH22

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

RJP65T54DPM-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

55.5 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.68 V

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

56 ns

RJP63F3DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

90 ns

RJH60F3DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

RJP6085DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

178.5 W

40 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M1DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

43 ns

RJH60D0DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.