Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJP1CS04DWA-00#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP4010AGE-01#P5

Renesas Electronics

N-CHANNEL

YES

1.6 W

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1.2 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M6DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

260 W

80 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

RJP1CS06DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP4002ASA-00-Q0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

DUAL

R-PDSO-G8

1

Not Qualified

RJP1CS07DWT-00#X0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBM300GS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

300 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

2SH12

Renesas Electronics

N-CHANNEL

SINGLE

NO

.45 W

15 A

PLASTIC/EPOXY

POWER CONTROL

50 mA

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

Unijunction Transistors

SILICON

600 V

TIN LEAD

.47

SINGLE

R-PSFM-T3

Not Qualified

.62

4.5 kohm

TO-220AB

e0

RJP65D05DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP65S07DWT-80#X0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH65T46DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

215 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

75 ns

GN4014ZB4LS

Renesas Electronics

N-CHANNEL

YES

60 W

14 A

Insulated Gate BIP Transistors

150 Cel

370 V

20 V

2.2 V

RJH60D0DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJP60F0DPE-00#J3

Renesas Electronics

N-CHANNEL

YES

122 W

50 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

RJP65S05DWA-80#W0

Renesas Electronics

N-CHANNEL

150 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM200BS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

200 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH60T4DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

131 ns

RJH1CV7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

465 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

98 ns

MBM100GR12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

300 ns

RJH60M7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

367 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60C9DPD-00-J2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

290 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

75 ns

RJH60V3BDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

40 W

35 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBB100AS6

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

100 A

POWER CONTROL

6

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

MBM300GR12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

700 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

MBM400GR6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

MBM400CS6AW

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJH6087BDPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223.2 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

80 ns

RJH60D5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

2SH14

Renesas Electronics

N-CHANNEL

NO

100 W

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

CT30SM-12

Renesas Electronics

N-CHANNEL

SINGLE

NO

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

165 ns

MBN800D33B

Renesas Electronics

NO

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

9

FLANGE MOUNT

UPPER

R-PUFM-X9

Not Qualified

2SH19

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

MBM200GR12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

300 ns

RJP63K2DPK-M0#T0

Renesas Electronics

N-CHANNEL

NO

60 W

35 A

Insulated Gate BIP Transistors

150 Cel

630 V

30 V

5 V

RJP1CS05DWA-80#W0

Renesas Electronics

N-CHANNEL

YES

150 A

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS04DWT-00#X0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP65D03DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

CT75AM-12

Renesas Electronics

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

305 ns

RJP30H1DPD-00-J2

Renesas Electronics

N-CHANNEL

YES

40 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

MBN600C20

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4000 W

600 A

UNSPECIFIED

POWER CONTROL

5.4 V

UNSPECIFIED

RECTANGULAR

1

4000 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2000 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, HIGH SPEED, LOW NOISE

1600 ns

RJH60F5BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

87 ns

MBN1800D17C

Renesas Electronics

NO

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

9

FLANGE MOUNT

UPPER

R-PUFM-X9

Not Qualified

MBB50A6

Renesas Electronics

50 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

RJH60D6DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

260 W

80 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

CY20AAJ-8-T13

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

DUAL

R-PDSO-G8

Not Qualified

MBN300GS12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

POWER CONTROL

1

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP60F0DPM-00#T1

Renesas Electronics

N-CHANNEL

NO

40 W

50 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM400GS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.