Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJH65T47DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

68 ns

RJH1CD5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

55 ns

RJH1CF5RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192.3 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

102 ns

RJP60D0DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

140 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

Not Qualified

55 ns

RJH60F4DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

145 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

62 ns

RJH60T04DPQ-A0#T0

Renesas Electronics

N-CHANNEL

NO

208.3 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

8 V

MBN1200GR12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

SQUARE

1

1400 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

S-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

800 ns

RJH60D3DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

45 ns

MBN600GS12AW

Renesas Electronics

3100 W

600 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

2SH30

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

950 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

710 ns

RJH60A83RDPD-E0#J2

Renesas Electronics

RJH1CM5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

58 ns

RJP4006AGE-00-P5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 A

PLASTIC/EPOXY

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-C8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJH60D5DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJP30K3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

330 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

120 ns

RJH1CF6RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

409 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

116 ns

MBM150GR12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

300 ns

CT30VS-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJH60M3DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113 W

35 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

RJP65M04DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH60D0DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

CT20ASL-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

15 V

4 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30H1DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

20 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

RJH60F6DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

186 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

65 ns

RJP1CS10DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH60D1DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

117 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

RBN40H125S1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

319 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.34 V

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

175 Cel

SILICON

1250 V

30 V

7.1 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

39 ns

2SH16-E

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1600 ns

3

FLANGE MOUNT

SILICON

600 V

TIN COPPER

SINGLE

R-PSFM-T3

1

Not Qualified

e2

RJH1BF6RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

289 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

93 ns

RJH60D5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

RJP30E3DPK-M0#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

160 ns

MBM300GR12

Renesas Electronics

NO

1710 W

300 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

RJP1CS24DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP4301APP-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

430 V

33 V

5.5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

70 ns

CT20VML-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

15 V

2 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

CY25AAJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

DUAL

R-PDSO-G8

Not Qualified

MBB100GS12AW

Renesas Electronics

600 W

100 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBM150GS12EBW

Renesas Electronics

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

FLANGE MOUNT

UPPER

R-XUFM-X7

Not Qualified

CT20VSL-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

15 V

2 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJH65D27BDPQ-A0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.65 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

55 ns

GN6015A

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

15 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

300 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

RJH1DF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

RJP60V0DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7.5 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

85 ns

MBN800GR17

Renesas Electronics

NO

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

7

FLANGE MOUNT

UPPER

R-PUFM-X7

Not Qualified

RJH60A83RDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

30 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

MBL150GS6P

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-X7

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

300 ns

2SH29

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

820 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

510 ns

MBN600C33

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

600 A

POWER CONTROL

1

SILICON

3300 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

1200 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.