Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJP30H1DPD-00#Q2

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJQ6008DPM-00#T0

Renesas Electronics

N-CHANNEL

NO

48 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

CY20AAH-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJP60D0DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

55 ns

RJH6086BDPK-00-T0

Renesas Electronics

N-CHANNEL

NO

198.4 W

45 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

5.5 V

RJH60F7ADPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

84 ns

MBM75GS12AW

Renesas Electronics

450 W

75 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJH60F5DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

75 ns

RJP1CS08DWA-80#W0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60F6DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

186 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

65 ns

RJH60D5DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH60M1DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

43 ns

RJH60V2BDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

63 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D7ADPK-00#T0

Renesas Electronics

N-CHANNEL

NO

300 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS27DWS-80#W0

Renesas Electronics

N-CHANNEL

SINGLE

YES

300 A

UNSPECIFIED

POWER AMPLIFIER

2 V

NO LEAD

SQUARE

1

920 ns

5

UNCASED CHIP

175 Cel

SILICON

1250 V

30 V

6.8 V

UPPER

S-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

165 ns

RJH60M5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN400GS12BW

Renesas Electronics

2000 W

400 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJH60D6DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

RJP65S04DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBB100A6

Renesas Electronics

100 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

RJP30H1DPD-00#J2

Renesas Electronics

N-CHANNEL

YES

40 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

RJH60D1DPP-M0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

117 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

43 ns

RJH60D7DPM-00#T1

Renesas Electronics

N-CHANNEL

NO

55 W

90 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

RJP5001APP-M0-T2

Renesas Electronics

N-CHANNEL

NO

45 W

Insulated Gate BIP Transistors

150 Cel

500 V

17 V

2.7 V

RJH60F7DPQ-A0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

144 ns

CT20ASJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30E2DPK-M0#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

130 ns

GN4530C

Renesas Electronics

N-CHANNEL

NO

150 W

30 A

1000 ns

800 ns

Insulated Gate BIP Transistors

150 Cel

450 V

20 V

CT60AM-18C-AD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

550 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

170 ns

RJH60T4DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

131 ns

RJP60D0DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJP1CS07DWA-80#W0

Renesas Electronics

N-CHANNEL

YES

300 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJP65M04DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

CT60AM-18F

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST RECOVERY

150 ns

RBN75H65T1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

5.9 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

56 ns

RJP65S08DWA-00#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJP1CV3DPH-E0#T2

Renesas Electronics

N-CHANNEL

NO

63.4 W

15 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

6.5 V

RJP4003ANS-00-Q1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-F8

1

Not Qualified

CT60AM-18B

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

550 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

170 ns

MBM150GS12AW

Renesas Electronics

800 W

150 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJP65M06DWA-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH60F7DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

144 ns

CT40KM-8H

Renesas Electronics

N-CHANNEL

SINGLE

NO

45 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

RJH60A01RDPD-A0#J2

Renesas Electronics

N-CHANNEL

YES

29.4 W

10 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS03DWA-80#W0

Renesas Electronics

N-CHANNEL

60 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RBN25H125S1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.34 V

THROUGH-HOLE

RECTANGULAR

1

167 ns

3

FLANGE MOUNT

175 Cel

SILICON

1250 V

30 V

7.1 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

27 ns

RJH65S04DPQ-A0

Renesas Electronics

N-CHANNEL

NO

378 W

100 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

6.8 V

RJP60F4DPM-00#T1

Renesas Electronics

N-CHANNEL

NO

41.2 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.