Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
105 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
180 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
34 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
750 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AC |
e3 |
74 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
.007 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
.015 ns |
7.6 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
400 V |
.011 ns |
-55 Cel |
10 V |
.03 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-263AB |
e3 |
30 |
260 |
2.8 ns |
AEC-Q101 |
||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
104 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
950 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
2500 V |
-55 Cel |
25 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
652 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
65 ns |
271 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
91 ns |
|||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
300 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
300 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
350 W |
85 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
570 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
283 W |
80 A |
PLASTIC/EPOXY |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
202 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Vincotech |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
246 W |
88 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
411 ns |
39 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
20 V |
6.3 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
125 ns |
||||||||||||||||||||||||||
Vincotech |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
246 W |
88 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
411 ns |
39 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
20 V |
6.3 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
125 ns |
||||||||||||||||||||||||||
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
30 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
450 ns |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 W |
215 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
955 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
UL RECOGNIZED |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e1 |
31 ns |
||||||||||||||||||||||||
|
Microchip Technology |
417 W |
84 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
|||||||||||||||||||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
2500 W |
450 A |
PLASTIC/EPOXY |
POWER CONTROL |
200 ns |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
2 |
400 ns |
11 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
800 ns |
-40 Cel |
20 V |
1200 ns |
6.6 V |
UPPER |
R-PUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
275 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
4 |
330 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
630 ns |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
232 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
27 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
250 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
938 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
454 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-247 |
e3 |
81 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
1080 ns |
1535 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
2280 ns |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
108 ns |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
294 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
48 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
321 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
85 ns |
470 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
.007 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
.015 ns |
.0076 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
400 V |
.011 ns |
-55 Cel |
10 V |
.03 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
.0028 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
560 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
105 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
170 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
69 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
200 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
5.75 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1000 W |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
480 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
50 A |
UNSPECIFIED |
POWER CONTROL |
600 ns |
2.65 V |
UNSPECIFIED |
RECTANGULAR |
7 |
300 ns |
530 ns |
24 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
1200 ns |
20 V |
1000 ns |
7 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
390 ns |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
543 W |
112 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
394 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-55 Cel |
30 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
81 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE |
NO |
962 W |
170 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
445 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
30 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
113 ns |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
COMPLEX |
NO |
280 W |
80 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
4 |
370 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
250 W |
100 A |
UNSPECIFIED |
MOTOR CONTROL |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
2 |
310 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
TIN SILVER COPPER |
UPPER |
R-XUFM-T12 |
1 |
ISOLATED |
Not Qualified |
e1 |
170 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1050 ns |
7 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
|||||||||||||||||||||||||||
Onsemi |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
39 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
550 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
930 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
355 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
250 W |
30 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
200 W |
52 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
72 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
313 W |
78 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
43 ns |
460 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
400 W |
90 A |
80 ns |
110 ns |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
7.5 V |
|||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
3.1 V |
GULL WING |
RECTANGULAR |
4 |
1066 ns |
9 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
DUAL |
R-PDSO-G9 |
ISOLATED |
217 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
225 W |
72 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
PIN/PEG |
RECTANGULAR |
6 |
330 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-P13 |
ISOLATED |
Not Qualified |
ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
110 ns |
|||||||||||||||||||||
|
Onsemi |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
520 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
24 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
205 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
260 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
650 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN SILVER |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
e2 |
300 ns |
IEC-60747-1; UL RECOGNIZED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.