Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKB15N65EH5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

180 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

34 ns

IRG4PH40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

e3

74 ns

ISL9V3040S3ST-F085C

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

.007 ns

1.65 V

GULL WING

RECTANGULAR

1

.015 ns

7.6 ns

2

SMALL OUTLINE

175 Cel

SILICON

400 V

.011 ns

-55 Cel

10 V

.03 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

260

2.8 ns

AEC-Q101

IXBH42N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

104 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

150 Cel

SILICON

2500 V

-55 Cel

25 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

652 ns

IXGT6N170A

Littelfuse

N-CHANNEL

SINGLE

YES

75 W

6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

65 ns

271 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

91 ns

MG75Q1BS11

Toshiba

N-CHANNEL

SINGLE

NO

300 W

75 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MWI50-12A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

350 W

85 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

6

570 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

STGWA40H60DLFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

V23990-K230-F40-/0B/-PM

Vincotech

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

246 W

88 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

411 ns

39

FLANGE MOUNT

175 Cel

SILICON

1200 V

20 V

6.3 V

UPPER

R-XUFM-X39

ISOLATED

125 ns

V23990-K230-F40-/1A/-PM

Vincotech

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

246 W

88 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

411 ns

39

FLANGE MOUNT

175 Cel

SILICON

1200 V

20 V

6.3 V

UPPER

R-XUFM-X39

ISOLATED

125 ns

7MBR30SA060

Fuji Electric

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

400 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

450 ns

APT150GN120JDQ4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

215 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

955 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

APT30GP60BDQ1G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e1

31 ns

APT50GR120JD30

Microchip Technology

417 W

84 A

1

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

CM450DX-24T

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

2500 W

450 A

PLASTIC/EPOXY

POWER CONTROL

200 ns

2.05 V

UNSPECIFIED

RECTANGULAR

2

400 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

800 ns

-40 Cel

20 V

1200 ns

6.6 V

UPPER

R-PUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

F4-75R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

100 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

330 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

45 ns

FF600R12KE4EBOSA1

Infineon Technologies

N-CHANNEL

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

630 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

232 ns

UL APPROVED

FP20R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

27 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL RECOGNIZED

IKQ75N120CH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

454 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

81 ns

IRG4BC10SD-SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

14 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

1080 ns

1535 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

2280 ns

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

108 ns

IRG4PC40WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

294 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

48 ns

IRG7PH42UD2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

321 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

85 ns

470 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

ISL9V3040D3ST-F085C

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

.007 ns

1.65 V

GULL WING

RECTANGULAR

1

.015 ns

.0076 ns

2

SMALL OUTLINE

175 Cel

SILICON

400 V

.011 ns

-55 Cel

10 V

.03 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

.0028 ns

AEC-Q101

ISL9V3040D3STV

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.65 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-55 Cel

12 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

2800 ns

AEC-Q101

IXGH24N170

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

105 ns

IXXH50N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

69 ns

STGP35HF60W

STMicroelectronics

N-CHANNEL

NO

200 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

MATTE TIN

e3

2MBI300U2B-060-50

Fuji Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1000 W

300 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

480 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

7MBR50VB120-50

Fuji Electric

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

600 ns

2.65 V

UNSPECIFIED

RECTANGULAR

7

300 ns

530 ns

24

FLANGE MOUNT

175 Cel

SILICON

1200 V

1200 ns

20 V

1000 ns

7 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

390 ns

APT70GR120J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

543 W

112 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

394 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

30 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

81 ns

UL RECOGNIZED

APT85GR120B2

Microchip Technology

N-CHANNEL

SINGLE

NO

962 W

170 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

445 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

113 ns

APTGL60TL120T3G

Microchip Technology

N-CHANNEL

COMPLEX

NO

280 W

80 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

4

370 ns

16

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

APTGT75A60T1G

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

100 A

UNSPECIFIED

MOTOR CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

2

310 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN SILVER COPPER

UPPER

R-XUFM-T12

1

ISOLATED

Not Qualified

e1

170 ns

FF600R12IP4BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1050 ns

7

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

FGY75T120SWD

Onsemi

FP10R12W1T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

108 ns

FS75R12KS4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

390 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FZ400R17KE4HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

930 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

355 ns

IKD15N60RFATMA1

Infineon Technologies

N-CHANNEL

YES

250 W

30 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

5.7 V

TIN

1

e3

IRG4PC50KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

52 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

72 ns

IRG7PH42UD1-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

78 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

43 ns

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

IRG7PH50K10DPBF

Infineon Technologies

N-CHANNEL

NO

400 W

90 A

80 ns

110 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

MMIX4G20N250

Littelfuse

N-CHANNEL

COMPLEX

YES

100 W

23 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

3.1 V

GULL WING

RECTANGULAR

4

1066 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

DUAL

R-PDSO-G9

ISOLATED

217 ns

MWI50-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

225 W

72 A

UNSPECIFIED

POWER CONTROL

2.4 V

PIN/PEG

RECTANGULAR

6

330 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P13

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

NVH680S75L4SPB

Onsemi

SK35GD126ET

Semikron International

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

520 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

115 ns

IEC-60747-1; UL RECOGNIZED

SKIIP13NAB065V1

Semikron International

N-CHANNEL

COMPLEX

NO

24 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

205 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

50 ns

UL RECOGNIZED

SKM200GB126D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

260 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

300 ns

IEC-60747-1; UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.