Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS Corporation |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
UNSPECIFIED |
SWITCHING |
75 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0008 ohm |
1500 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
UNSPECIFIED |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0012 ohm |
1000 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
26 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
349 A |
39 mJ |
24 A |
8 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.025 ohm |
24 A |
QUAD |
S-PQCC-N8 |
1 |
DRAIN SOURCE |
e3 |
30 |
260 |
8 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
261 A |
294 mJ |
48 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
40 ns |
MATTE TIN |
.0099 ohm |
48 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN SOURCE |
MO-240AA |
e3 |
30 |
260 |
23 pF |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
26 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
349 A |
32 mJ |
26 A |
8 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
26 A |
QUAD |
S-PQCC-N8 |
1 |
SOURCE |
e3 |
30 |
260 |
10 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
62 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
886 A |
541 mJ |
156 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
52 ns |
-55 Cel |
106 ns |
MATTE TIN |
.0015 ohm |
156 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN SOURCE |
MO-240AA |
e3 |
30 |
260 |
135 pF |
|||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
80 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0177 ohm |
9.5 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
16 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
1.96 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
50 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.96 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
7.6 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
10.6 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
80 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0177 ohm |
9.5 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
16 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
1.96 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
50 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.96 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
7.6 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
10.6 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
1.96 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
50 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.96 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
7.6 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
10.6 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
80 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0177 ohm |
9.5 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
16 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
80 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0177 ohm |
9.5 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
16 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
1.96 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
50 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.96 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
7.6 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
10.6 pF |
MIL-STD-202 |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
75 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN SILVER COPPER |
.021 ohm |
75 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
e1 |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
5 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN SILVER COPPER |
.0051 ohm |
140 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e1 |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
5 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN SILVER COPPER |
.0045 ohm |
200 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e1 |
UL RECOGNIZED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.