2.7 W Power Field Effect Transistors (FET) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

CSD16411Q3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

138 A

16 mJ

56 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

14 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

43 pF

NX3008NBKMB,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.53 A

1

e3

30

260

NTTFS4C02NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

500 A

162 mJ

16 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0031 ohm

16 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

55 pF

CSD16406Q3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

114 A

101 mJ

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0074 ohm

19 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

80 pF

PMZB420UN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.9 A

1

e3

30

260

FDPC4044

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

DUAL

S-PDSO-N6

1

SOURCE

e3

30

260

95 pF

CSD17304Q3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

88 mJ

56 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0126 ohm

15 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

38 pF

STS10P4LLF6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

2.7 W

150 Cel

SILICON

.015 ohm

10 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

238.5 pF

STS5P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NOT SPECIFIED

NOT SPECIFIED

FDPC4044-P

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

DUAL

S-PDSO-N6

1

SOURCE

30

260

95 pF

PMZB790SN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.65 A

1

e3

30

260

CSD13202Q2

Texas Instruments

N-CHANNEL

SINGLE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

76 A

20 mJ

22 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0116 ohm

14.4 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e4

30

260

56 pF

STS15N4LLF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2000 mJ

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.007 ohm

15 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

MMSF3350R2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

1000 mJ

7.4 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.011 ohm

7.4 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NILMS4501NR2G

Onsemi

N-CHANNEL

CURRENT MIRROR WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

24 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

50 mJ

9.5 A

4

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

9.5 A

BOTTOM

R-PBCC-N4

1

DRAIN

Not Qualified

e3

260

EFC3J023NUZTDG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

2

10

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

BOTTOM

R-PBCC-N10

SOURCE

NOT SPECIFIED

NOT SPECIFIED

NILMS4501NR2

Onsemi

N-CHANNEL

CURRENT MIRROR WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

24 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

50 mJ

9.5 A

4

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.016 ohm

9.5 A

BOTTOM

R-PBCC-N4

DRAIN

Not Qualified

e0

235

IRLM120A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

105 mJ

2.3 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

80 ns

.22 ohm

2.3 A

DUAL

R-PDSO-G4

DRAIN

50 pF

STS26N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

104 A

525 mJ

26 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0053 ohm

26 A

DUAL

R-PDSO-G8

ULTRA-LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

STS9P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

9 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.7 W

150 Cel

SILICON

-55 Cel

.0225 ohm

9 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

STS20N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

20 A

DUAL

R-PDSO-G8

Not Qualified

ULTRA-LOW RESISTANCE

STS9P2UH7

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NOT SPECIFIED

NOT SPECIFIED

STS30N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

525 mJ

30 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0035 ohm

30 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

STS8DN3LLH5

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.022 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

STS25N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

22 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0032 ohm

22 A

DUAL

R-PDSO-G8

Not Qualified

ULTRA-LOW RESISTANCE

STS11N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.019 ohm

11 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

STS15N4LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2000 mJ

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.007 ohm

15 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STS19N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

19 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

19 A

DUAL

R-PDSO-G8

ULTRA-LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

STS14N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

180 mJ

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0077 ohm

14 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STS10P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STS13N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

180 mJ

13 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0091 ohm

13 A

DUAL

R-PDSO-G8

ULTRA-LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

STS12N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0097 ohm

12 A

DUAL

R-PDSO-G8

1

DRAIN

Not Qualified

e4

40

260

STS17NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

150 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0075 ohm

17 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e4

PMZ290UNYL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

PMZB380XN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.93 A

1

e3

30

260

DMHT6016LFJ-13

Diodes Incorporated

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

14.8 A

11.7 mJ

10.6 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.022 ohm

10.6 A

DUAL

R-PDSO-N12

e3

30

260

DMT10H009SCG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

198.5 A

109.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0095 ohm

48 A

DUAL

S-PDSO-N8

1

DRAIN

e4

30

260

13 pF

MIL-STD-202

DMT10H009SCG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

198.5 A

109.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0095 ohm

48 A

DUAL

S-PDSO-N8

1

DRAIN

e4

30

260

13 pF

MIL-STD-202

DMN3008SCP10-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

2.7 W

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

10

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-XBCC-N10

1

ESD PROTECTED

e4

260

DMT6015LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

60 A

5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

10.6 A

DUAL

R-PDSO-F8

DRAIN

e3

260

19.7 pF

MIL-STD-202

UPA2502TM-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

UPA2502TM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

52 A

16.9 mJ

13 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.018 ohm

13 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

UPA2502TM-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

10

260

UPA2502TM-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

UPA2502TM-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

UPA2502TM-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.