700 W Power Field Effect Transistors (FET) 59

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFN230N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	920 A	4000 mJ	230 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.006 ohm	230 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN80N50	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	320 A	6000 mJ	80 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	NICKEL	.055 ohm	80 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED
IXTN22N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1500 mJ	22 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.6 ohm	22 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified							UL RECOGNIZED
IXFN180N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	720 A	4000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0125 ohm	180 A	UPPER	R-PUFM-X4	ISOLATED		AVALANCHE RATED					600 pF	UL RECOGNIZED
IXFN60N60	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	600 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	240 A	4000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.075 ohm	60 A	UPPER	R-PUFM-X4	DRAIN		AVALANCHE RATED						UL RECOGNIZED
IXTN46N50L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	100 A	1500 mJ	46 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.16 ohm	46 A	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED
SKM121AR	Semikron International	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	390 A		130 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	700 W	150 Cel	SILICON		TIN SILVER	.02 ohm	130 A	UPPER	R-XUFM-X4	ISOLATED	Not Qualified			e2			1000 pF	UL RECOGNIZED
APT40M35JVR	Microchip Technology				700 W							1			93 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					93 A
APTMC170AM30CT1AG	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	700 W	UNSPECIFIED	SWITCHING	1700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	200 A		100 A	12	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE	-40 Cel		.035 ohm	100 A	UPPER	R-XUFM-X12	ISOLATED					NOT SPECIFIED	NOT SPECIFIED
IXFN140N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	300 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	300 A	5000 mJ	110 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.024 ohm	110 A	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
SKM180A020	Semikron International	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	540 A		180 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER	.011 ohm	180 A	UPPER	R-XUFM-X4	ISOLATED	Not Qualified			e2				UL RECOGNIZED
IXFN44N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	176 A	4000 mJ	44 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.165 ohm	44 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
SKM111AR	Semikron International	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	600 A		200 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	700 W	150 Cel	SILICON		TIN SILVER	.0085 ohm	200 A	UPPER	R-XUFM-X4	ISOLATED	Not Qualified			e2			2700 pF	UL RECOGNIZED
IXFN36N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	144 A	4000 mJ	36 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.24 ohm	36 A	UPPER	R-PUFM-X4	DRAIN	Not Qualified	AVALANCHE RATED
IXTK120N25P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2.5 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.024 ohm	120 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFN340N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	70 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	1360 A	4000 mJ	340 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL	.004 ohm	340 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified	AVALANCHE RATED
IXTX22N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.6 ohm	22 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					100 pF
IXTK22N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.6 ohm	22 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	100 pF
IXTK46N50L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.16 ohm	46 A	SINGLE	R-PSFM-T3	DRAIN			TO-264AA	e1	10	260	170 pF
BLA1011S-200R,112	NXP Semiconductors	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BLA1011-200R,112	NXP Semiconductors	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BLA0912-250R,112	NXP Semiconductors	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BSM111	Infineon Technologies				700 W							1			200 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					200 A
BSM181/R	Infineon Technologies	N-CHANNEL	SINGLE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1			36 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.24 ohm	36 A	UPPER	R-PUFM-X4		Not Qualified	FRED FET
BSM191	Infineon Technologies				700 W							1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					28 A
BSM151F(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	224 A		56 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.11 ohm	56 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM191/F	Infineon Technologies	N-CHANNEL	SINGLE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1			28 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.42 ohm	28 A	UPPER	R-PUFM-X4		Not Qualified	FRED FET
BSM111AR	Infineon Technologies				700 W							1			200 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					200 A
BSM181(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	144 A		36 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.24 ohm	36 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM121AR	Infineon Technologies				700 W							1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					130 A
BSM121	Infineon Technologies				700 W							1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					130 A
PTFA092201EV4	Infineon Technologies	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BSM101AR	Infineon Technologies				700 W							1			200 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					200 A
BSM181F(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	136 A		34 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.32 ohm	34 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM111AR(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	600 A		200 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0085 ohm	200 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM181F	Infineon Technologies				700 W							1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					34 A
BSM151F	Infineon Technologies				700 W							1			56 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					56 A
BSM181FR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	136 A		34 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.32 ohm	34 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
PTFA092211EL	Infineon Technologies	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BSM151FR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	224 A		56 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.11 ohm	56 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM191(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	112 A		28 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.37 ohm	28 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
BSM121AR(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	390 A		130 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.02 ohm	130 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
PTFA092211FL	Infineon Technologies	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
BSM181	Infineon Technologies				700 W							1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					36 A
BSM191F(C)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	110 A		28 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.42 ohm	28 A	UPPER	R-PUFM-X4	ISOLATED	Not Qualified
PTFA092201FV4	Infineon Technologies	N-CHANNEL	SINGLE		700 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel
IXTN5N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	2500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	20 A	2500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		8.8 ohm	5 A	UPPER	R-PUFM-X4	ISOLATED		AVALANCHE RATED					90 pF	UL RECOGNIZED
IXTX8N150L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		3.6 ohm	8 A	SINGLE	R-PSIP-T3	DRAIN							70 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.