NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP80NF10FP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

152 A

350 mJ

37 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

38 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IRF540ZLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

92 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

120 mJ

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0265 ohm

36 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-262AA

e3

30

260

VNP35N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSFM-T3

TO-220AB

e3

AEC-Q101

STP11NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

190 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.52 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STP11NK50ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

190 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.52 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

FQP30N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

350 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.045 ohm

32 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP27P06_SW82127

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

560 mJ

27 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

425 ns

-55 Cel

260 ns

Matte Tin (Sn)

.07 ohm

27 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

155 pF

G3R350MT12D

Genesic Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

43 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.455 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

.8 pF

IEC-607478-4

IRFB4115PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

830 mJ

104 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.011 ohm

104 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTP8G202NG

Onsemi

N-CHANNEL

SINGLE

NO

65 W

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

9 A

e3

30

260

IRF9530PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.3 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IRFB4110PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

670 A

190 mJ

180 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0045 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STW9N150

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

720 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2.5 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

JANTX2N6796

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

75 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.195 ohm

8 A

BOTTOM

O-MBCY-W3

DRAIN

Qualified

HIGH RELIABILITY

TO-205AF

e0

MIL-19500

MSCSM170AM11CT3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

480 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0113 ohm

240 A

UPPER

R-XUFM-X25

ISOLATED

40 pF

IRFP460LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Pure Matte Tin (Sn) - annealed

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

30

260

FDP20N50F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1110 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.26 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDPF10N60NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

550 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.75 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SCT2280KEC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

108 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.364 ohm

14 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

5 pF

IRFP4568PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

517 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

684 A

763 mJ

171 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0059 ohm

171 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRF9530

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.3 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

SPP08N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

340 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.65 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

10

260

SCT2080KEC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

262 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.117 ohm

40 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

16 pF

STP10NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

300 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.75 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IRF640

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

580 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.18 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRF840PBF-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.85 ohm

8 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

120 pF

SCT3080KLGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

77 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

TIN

.104 ohm

31 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

IXTK3N250L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

AMPLIFIER

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

10 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

TO-264AA

63 pF

IRF9540PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

640 mJ

19 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.2 ohm

19 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

140 pF

IRF3710PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

280 mJ

57 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.023 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFP460BPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62 A

281 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.25 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AC

e3

IRF630NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

82 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37 A

94 mJ

9.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.3 ohm

9.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

e3

SPP08N80C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.65 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

IPP120P04P4L03AKSA2

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

78 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0052 ohm

120 A

SINGLE

R-PSFM-T3

TO-220AB

e3

270 pF

AEC-Q101

FDA59N30

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

236 A

1734 mJ

59 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.056 ohm

59 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

e3

NOT SPECIFIED

NOT SPECIFIED

IRFP450PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

760 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

e3

30

260

STP12NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

400 mJ

10.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.75 ohm

10.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

SPP20N60C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62.1 A

690 mJ

20.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.19 ohm

20.7 A

SINGLE

R-PSFM-T3

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e3

G3R75MT12D

Genesic Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

182 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

199 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.097 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.8 pF

IEC-60747-8-4

IMZ120R030M1HXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

56 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

TIN

.056 ohm

56 A

SINGLE

R-PSFM-T4

TO-247

13 pF

FDL100N50F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

5000 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.055 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-264AA

e3

IPA80R1K0CEXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

230 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.95 ohm

5.7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STW12NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.88 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRF840APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

30

260

8 pF

IRFP460LC

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IXFN360N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

900 A

2000 mJ

360 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

NICKEL

.0026 ohm

360 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

SPW20N60C3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62.1 A

690 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.19 ohm

20.7 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247AD

e3

VNP20N07-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.07 ohm

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.