NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPW60R041C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

481 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

272 A

1954 mJ

77.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.041 ohm

77.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRF460

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

500 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

84 A

1200 mJ

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.31 ohm

21 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IRF530NL

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

93 mJ

17 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.09 ohm

17 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

e0

IRFP27N60KPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

530 mJ

27 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.22 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IRFPC60PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

1000 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.4 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

98 pF

IRL3705NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

310 A

340 mJ

77 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

89 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

TO-220AB

e3

IRL520NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

85 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.22 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IXFH14N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.55 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

17 pF

IXFK230N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1670 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

630 A

5000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0075 ohm

230 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

60 pF

IXFK27N80Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.32 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFX360N15T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1670 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

900 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.004 ohm

360 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

665 pF

IXTP3N120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

700 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

4.5 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

60 pF

MSC080SMA120B

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

91 A

37 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.1 ohm

37 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AD

9 pF

NTD2955-001

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

235

STF40NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

230 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

40 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STW75NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.034 ohm

75 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AB

e3

VMM1500-0075P

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0008 ohm

1500 A

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUZ31LHXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

13.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FDA28N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

2391 mJ

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.155 ohm

28 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FDP5N60NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

175 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FF45MR12W1M1B11BOMA1

Infineon Technologies

N-Channel

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

5.55 V

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

50 A

55300 ns

10

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

20 V

.045 ohm

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

14100 ns

14 pF

FQPF5N60CYDTU

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

33 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

FQPF6N80C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

51 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

680 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 ohm

5.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPP17N25S3100AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

54 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.1 ohm

17 A

SINGLE

R-PSFM-T3

TO-220AB

e3

23 pF

IRF100B202

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

292 mJ

97 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0086 ohm

97 A

SINGLE

R-PSFM-T3

TO-220AB

e3

154 pF

IRF1310NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

420 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.036 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e3

IRFB7537PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

700 A

554 mJ

173 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0033 ohm

173 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFI4020H-117P

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

36 A

130 mJ

9.1 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

9.1 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRLZ44PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE MATTE TIN

.028 ohm

50 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

30

260

IXFH24N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

.23 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

MSCSM120AM042CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2031 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

990 A

495 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0052 ohm

495 A

UPPER

R-XUFM-X7

ISOLATED

.15 pF

SPP15N60CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

460 mJ

13.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.33 ohm

13.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP9NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

235 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

e3

STW11NM80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

400 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-247

e3

STW55NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

204 A

850 mJ

51 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.06 ohm

51 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

AOTF5N50

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

203 mJ

5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52.4 ns

-55 Cel

70.4 ns

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

5.9 pF

AOTF5N50FD

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

APT20M22JVR

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

388 A

2500 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

97 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH VOLTAGE

NOT SPECIFIED

NOT SPECIFIED

APT41F100J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

260 A

4075 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

42 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

APTMC120AM20CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

280 A

143 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.017 ohm

143 A

UPPER

R-XUFM-X12

ISOLATED

BUK553-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

70 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

80 ns

170 ns

.18 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

120 pF

BUZ31H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

95 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

58 A

200 mJ

14.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

14.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BUZ31HXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

58 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

14.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

C2M0280120D

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

MATTE TIN

.37 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

CAB760M12HM3

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1530 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.00173 ohm

UPPER

R-XUFM-X9

ISOLATED

90 pF

CAS120M12BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

480 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.016 ohm

UPPER

R-XUFM-X7

ISOLATED

43.8 pF

CCS050M12CM2

Wolfspeed

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

250 A

28

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

-40 Cel

.036 ohm

87 A

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IEC-60747-8-4

FCP650N80Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

162 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

204 mJ

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

76 ns

-55 Cel

107 ns

Matte Tin (Sn) - annealed

.65 ohm

10 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.