YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7769L1TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	125 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	500 A	260 mJ	375 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	3.3 W	175 Cel	SILICON		-55 Cel			.0035 ohm	375 A	BOTTOM	R-XBCC-N3	1	DRAIN
BSC160N10NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	168 A	50 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.016 ohm	8.8 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
IRF530STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	69 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.16 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
IRFH5025TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.3 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	46 A	320 mJ	32 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.8 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IXTA3N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	700 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	4.5 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	60 pF
CSD19535KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	451 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0041 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	38 pF
FDS4141_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
SQD50P06-15L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	135 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0155 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSC340N08NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	92 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.034 ohm	23 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	40	260
CSD18537NQ5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	151 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	11 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	5.2 pF
FCB20N60TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	690 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.19 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263	e3	30	245
IPD600N25N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.06 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3
SI7431DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	2.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.174 ohm	2.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
SI7852DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.2 W	UNSPECIFIED	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A		7.6 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.0165 ohm	7.6 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	FAST SWITCHING			30	260
SPD02N80C3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	2.7 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3	40	260
BSP250,115	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.65 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	80 ns		140 ns	TIN	.4 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDMS86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	50 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.051 ohm	4.6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
IRF9530STRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.3 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRFS7530TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	760 A	1025 mJ	195 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.002 ohm	195 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260
NCV8406ADTRKG	Onsemi	N-CHANNEL	COMPLEX	YES	2.31 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.24 ohm		SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
RJK0305DPB-02#J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.013 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN
SIA436DJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	8 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0094 ohm	12 A	DUAL	S-PDSO-N3		DRAIN						260
BSC100N06LS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	22 mJ	50 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.01 ohm	12 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	40	260
BSC100N06LS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	22 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.01 ohm	12 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SPB20N60C3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62.1 A	690 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.19 ohm	20.7 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3
TJ200F04M3L,LXHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	600 A	924 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0026 ohm	200 A	SINGLE	R-PSSO-G2		DRAIN							1150 pF	AEC-Q101
IPB200N25N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	256 A	320 mJ	64 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.02 ohm	64 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245	4 pF
IRF540ZSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	120 mJ	36 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0265 ohm	36 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IRF7201TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	70 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.03 ohm	7.3 A	DUAL	R-PDSO-G8	1			ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRFR5305TRRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	31 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.065 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3	30	260
AUIRF5210STRR	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	120 mJ	38 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.06 ohm	38 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-263AB					AEC-Q101
BSC022N04LS6ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	556 A	85 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0032 ohm	139 A	DUAL	R-PDSO-F8	1	DRAIN				e3			20 pF
FDS6910	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	56 ns	MATTE TIN	.013 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	100 pF
IPD50P04P413ATMA2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	18 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0126 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260		AEC-Q101
IRLML5203PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-236AB	e3
NTTFS5C673NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.013 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
SI2318DS-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	45 pF
VNB35N07TR-E	STMicroelectronics	N-CHANNEL	COMPLEX	YES	125 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			35 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	Matte Tin (Sn) - annealed	.035 ohm		SINGLE	R-PSSO-G2	1					e3	30	245		AEC-Q101
FDMC8622	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	37 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.056 ohm	4 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	MO-240BA	e4	30	260
IPD042P03L3GATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	269 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0068 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN		LOGIC LEVEL COMPATIBLE	TO-252	e3
IRF7769L2TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	500 A	260 mJ	395 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.0035 ohm	20 A	BOTTOM	R-XBCC-N9		DRAIN	Not Qualified			e1
NDT452AP_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.065 ohm	5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SI7456DDP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	11.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.023 ohm	27.8 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
IRF840ASTRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.85 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
SIR836DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15.6 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	5 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.019 ohm	21 A	DUAL	R-XDSO-C5		DRAIN	Not Qualified			e3
FDC608PZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.043 ohm	5.8 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
IPN70R1K0CEATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.7 A	50 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-40 Cel		TIN	1 ohm		DUAL	R-PDSO-G3	1	DRAIN				e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.