YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDBL86361_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	MATTE TIN	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260	139 pF	AEC-Q101
FDBL86361-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	MATTE TIN	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	260	139 pF	AEC-Q101
IRF9640SPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	125 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.5 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
CSD25402Q3A	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.8 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	148 A		15 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0159 ohm	15 A	DUAL	R-PDSO-F5	1	SOURCE				e3	30	260	51 pF
IRFL9014	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN LEAD	.5 ohm		SINGLE	R-PSSO-G3		DRAIN	Not Qualified		TO-261AA	e0
FDC638APZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	72 ohm	4.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
IRF9540NSHR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	430 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.117 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE		e0
IRFS4229TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	130 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.048 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
DMP4025SFGQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.95 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	4.65 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	128 pF	AEC-Q101; IATF 16949
SI4214DDY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	5 mJ	8.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	59 ns	-55 Cel	108 ns	MATTE TIN	.0195 ohm	8.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	86 pF
STL140N6F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	560 A	38 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0028 ohm	140 A	DUAL	R-PDSO-F5	1	DRAIN		BULK: 3000		e3		260	193 pF
SIR871DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	300 A	61 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.02 ohm	48 A	DUAL	R-PDSO-F5		DRAIN					30	260
CSD19532KTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	259 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0066 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	18 pF
FDT3N40TF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	46 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.4 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	250
BSP92PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.04 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	12 ohm	.26 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	40	260		AEC-Q101
FDS4465_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0085 ohm	13.5 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e3	30	260
FDS4465-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.0085 ohm	13.5 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4	30	260
IRL540NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	310 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.053 ohm	36 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
SQ2319ADS-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	8.4 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	36 ns	-55 Cel	54 ns	MATTE TIN	.075 ohm	4.6 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	70 pF	AEC-Q101
SUM110P04-05-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	281 mJ	110 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	15 W	175 Cel	SILICON	480 ns	-55 Cel	220 ns	MATTE TIN	.005 ohm	39 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRF7470TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	85 A	300 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
ZXMHC6A07T8TA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	8.7 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.3 ohm	1.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRLH5034TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	360 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0032 ohm	29 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
FDB28N30TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		588 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.129 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
FDS6690A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1 W	150 Cel	SILICON	29 ns	-55 Cel	63 ns	MATTE TIN	.0125 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	115 pF
IRF8736TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	126 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0048 ohm	18 A	DUAL	R-PDSO-G8	1				MS-012AA
SI4435DYTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.02 ohm	8 A	DUAL	R-PDSO-G8	1			ULTRA LOW RESISTANCE	MS-012AA
STH315N10F7-6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	1000 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.0023 ohm	180 A	SINGLE	R-PSSO-G6		DRAIN		ULTRA LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
CSD19538Q3AT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	37 A	8.1 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.072 ohm	4.9 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED		e3	30	260	16.4 pF
IPD200N15N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	170 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.02 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3
IRF9530STRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.3 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
CSD17575Q3T	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	240 A	115 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0032 ohm	27 A	DUAL	S-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	204 pF
SI7415DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	1	30 A		3.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.065 ohm	3.6 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
CSD19532KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	259 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0066 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	18 pF
IRFR48ZTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	91 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	74 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.011 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
BSC060N10NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	360 A	230 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.006 ohm	14.9 A	DUAL	R-PDSO-N8		DRAIN
GS66516T-MR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	650 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A		60 A	4	SMALL OUTLINE		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE		-55 Cel		GOLD OVER NICKEL	.032 ohm	60 A	DUAL	R-PDSO-N4	3	SOURCE				e4	30	260	5.9 pF
IRF7495TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	180 mJ	7.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.022 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IXTA44P15T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	298 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.065 ohm	44 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	183 pF
SIR622DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	80 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	51.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
BSC010N04LSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	330 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0013 ohm	38 A	DUAL	R-PDSO-F8	1	DRAIN				e3
FDMS86200	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	220 mJ	52 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.018 ohm	9.6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
IRF2804STRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1080 A	540 mJ	270 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.002 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE		e3	30	260
IRLMS2002TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G6	1			ULTRA-LOW RESISTANCE		e3	30	260
SQM90142E_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	205 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0153 ohm	95 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
STD2NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.4 A	170 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.7 ns	-55 Cel	74 ns	MATTE TIN	8.5 ohm	1.85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-252AA	e3		260	9 pF
FDS4935A_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.023 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified			e3
BSC028N06LS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	298 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0028 ohm	100 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.