YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFH5007TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	75 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	250 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0059 ohm	17 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IRLS4030TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	370 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	730 A	305 mJ	180 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.0043 ohm	180 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260
SIS488DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	100 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0055 ohm	40 A	DUAL	S-PDSO-C5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
BSP296NH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.6 A	15 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.6 ohm	1.2 A	DUAL	R-PDSO-G4	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3				AEC-Q101
IRFR5305TRL	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.065 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-252AA	e0	30	245
RS1G120MNTB	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0207 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN				e3	10	260
SPD18P06PGBTMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	74.4 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.13 ohm	18.6 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AB	e3
ZVP4424GTA	Diodes Incorporated	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	11 ohm	.48 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDMQ86530L	Onsemi	N-CHANNEL	COMPLEX	YES	22 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	4	50 A		8 A	12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	45 ns	NICKEL PALLADIUM GOLD SILVER	.0175 ohm	8 A	DUAL	R-PDSO-N12	1	DRAIN SOURCE				e4	30	260	15 pF
SSM3J356R,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	6 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.4 ohm	2 A	DUAL	R-PDSO-F3									25 pF
BSP135L6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.48 A		.12 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					45 ohm	.12 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified					260
BSZ160N10NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	63 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.016 ohm	40 A	DUAL	S-PDSO-N8		DRAIN
CSD18536KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	819 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	200 A	SINGLE	R-PSSO-G3	2	DRAIN		AVALANCHE RATED		e3	30	260	51 pF
IRF530STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	69 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.16 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
IRF7503TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	2	14 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.135 ohm	2.4 A	DUAL	S-PDSO-G8	1			ULTRA LOW RESISTANCE		e3	30	260
SIS434DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	45 mJ	35 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0076 ohm	17.6 A	DUAL	S-PDSO-C5	1	DRAIN	Not Qualified			e3	40	260
BSC010N04LSIATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	230 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0014 ohm	37 A	DUAL	R-PDSO-F8	1	DRAIN		ULTRA LOW RESISTANCE		e3
BSC072N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	296 A	40 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0072 ohm	19 A	DUAL	R-PDSO-F5	1	DRAIN				e3
BSP149H6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	2.6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	1.8 ohm	.66 A	DUAL	R-PDSO-G4		DRAIN				e3				AEC-Q101
IRF7815TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41 A	529 mJ	5.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.043 ohm	5.1 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
AUIRF7103QTR	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A	22 mJ	3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.13 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	40	260
DN3545N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	DEPLETION MODE	1	.3 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	50 ns	-55 Cel	70 ns	MATTE TIN	20 ohm	.2 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3		260	15 pF
FDD6637_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0116 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDD6637-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		61 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0116 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDS3890_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	175 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.044 ohm	4.7 A	DUAL	R-PDSO-G8			Not Qualified			e3
IPB120P04P4L03ATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.0052 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN		LOGIC LEVEL COMPATIBLE	TO-263AB	e3	NOT SPECIFIED	NOT SPECIFIED
IPD320N20N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	136 A	190 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.032 ohm	34 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3		260
IRF7749L2TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	800 A	260 mJ	375 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.0015 ohm	33 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified			e1
IXTY01N100D	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1	.4 A		.4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.1 W	150 Cel	SILICON		-55 Cel		MATTE TIN	80 ohm	.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260
DN3525N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	DEPLETION MODE	1	1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	45 ns	-55 Cel	65 ns	MATTE TIN	6 ohm	.36 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	FAST SWITCHING	TO-243AA	e3		260	20 pF	TS 16949
FDS6875_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.03 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified			e3
IRFS52N15DTRLP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	470 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.032 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN					30	260
SUM65N20-30-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	61 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.03 ohm	65 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	260
ZVN4310GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		1.67 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	33 ns	-55 Cel	46 ns	MATTE TIN	.54 ohm	1.67 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	20 pF
STD20NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	225 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.05 ohm	24 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
SUM110N10-09-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	437.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A		110 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0095 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
TC6320TG-G	Microchip Technology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				8	SMALL OUTLINE	Power Field-Effect Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	7 ohm		DUAL	R-PDSO-G8	1		Not Qualified			e3	40	260	30 pF	TS 16949
BSZ22DN20NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	28 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.225 ohm	7 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3
IRF6218STRLPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.15 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
SUD09P10-195-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32.1 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	16.2 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.195 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDMC8360LET40	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	658 A	253 mJ	141 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	42 ns	-55 Cel	71 ns	Matte Tin (Sn) - annealed	.0021 ohm	141 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	80 pF
G2R1000MT33J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	3300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		4 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			1.2 ohm	4 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				2.4 pF	IEC-60747-8-4
IRFS3006TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1080 A	320 mJ	270 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0025 ohm	195 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
NP100P06PDG-E1-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	420 mJ	100 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0078 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
NVMFS5C604NLWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	776 mJ	287 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	287 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF	AEC-Q101
SI7949DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	25 A	24.2 mJ	3.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified
BSP318S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.4 A	60 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.15 ohm	2.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3	40	260
BSZ086P03NS3GATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	105 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0134 ohm	13.5 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.