YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDS8896	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	196 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	68 ns	-55 Cel	126 ns	MATTE TIN	.006 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	300 pF
IPB072N15N3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	780 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0072 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB		NOT SPECIFIED	NOT SPECIFIED
NVMFD5C650NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	502 A	186 mJ	111 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0058 ohm	21 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
NVMFS5C404NLAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	907 mJ	370 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.001 ohm	370 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	79.8 pF	AEC-Q101
BSC037N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0037 ohm	22 A	DUAL	R-PDSO-F8	1	DRAIN				e3
DMP2035UVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	5.2 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260
FDBL0200N100	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	73 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.002 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	245	41 pF
FDD3672	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	135 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		120 mJ	6.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	6.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRFZ34NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	130 mJ	29 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.04 ohm	29 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e3	30	260
SQJB80EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	84 A	20 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.019 ohm	20 A	SINGLE	R-PSSO-G4		DRAIN					40	260		AEC-Q101
STL8N10LF3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	31.2 A	190 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.05 ohm	20 A	DUAL	R-PDSO-F5		DRAIN		AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
ZXMN6A09GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A	.07 mJ	5 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.04 ohm	5.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	59 pF	MIL-STD-202
AO3400	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.028 ohm	5.8 A	DUAL	R-PDSO-G3							NOT SPECIFIED	NOT SPECIFIED	50 pF
IPB036N12N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	900 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0036 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3
IRFS4115TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	396 A	830 mJ	99 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0121 ohm	99 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IXTA3N150HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	1500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	7.3 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	30 pF
NTTFS6H850NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	300 A	271 mJ	68 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	11 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260
NVF6P02T3G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	150 mJ	10 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	10 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260		AEC-Q101
SI7884BDP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	54 mJ	58 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	66 ns	-55 Cel	77 ns	Matte Tin (Sn) - annealed	.0075 ohm	58 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	142 pF
SPB17N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A	670 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.29 ohm	17 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3		245
SQJ407EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	155 A	84 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0044 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN						260		AEC-Q101
BSC042NE7NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	75 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	220 mJ	100 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0042 ohm	100 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3			40 pF
BSC110N15NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	304 A	100 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.011 ohm	76 A	DUAL	R-PDSO-F5	1	DRAIN				e3
SISA96DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	26.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	65 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	66 ns	-55 Cel	44 ns		.012 ohm	16 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	37 pF
TP2510N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A		.48 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	3.5 ohm	.48 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3		260	25 pF
BUK9M34-100EX	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	114 A	57.8 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.034 ohm	29 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101; IEC-60134
IRLR8256TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	63 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	325 A	86 mJ	81 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0057 ohm	81 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
ZVN4424GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	6 ohm	.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
BSP295L6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.5 ohm	1.8 A	DUAL	R-PDSO-G4		DRAIN				e3				AEC-Q101
BSP317PL6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.72 A		.43 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	4 ohm	.43 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
BSP324H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.68 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.5 ns	-55 Cel	127 ns	TIN	25 ohm	.17 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3			5.7 pF	AEC-Q101
SIR692DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.25 mJ	24.2 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	78 ns	-55 Cel	92 ns		.067 ohm	24.2 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	9.3 pF
BSC030N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	250 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.003 ohm	22 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260
BSC065N06LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	256 A	21 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.0065 ohm	15 A	DUAL	R-PDSO-F8	1	DRAIN				e3
BSC110N06NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	22 mJ	50 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.011 ohm	12 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
IRFH5210TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	86 mJ	55 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0149 ohm	10 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
BSZ034N04LSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	70 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0046 ohm	19 A	DUAL	S-PDSO-N8	1	DRAIN				e3
BSZ12DN20NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	45 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.125 ohm	11.3 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3
FDFS2P106A	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.11 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
PSMN039-100YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	74 W						ENHANCEMENT MODE	1			28.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		28.1 A			1					e3	30	260
SI7309DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.8 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	1	20 A	11 mJ	8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.115 ohm	3.9 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SUD50P06-15-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	128 ns	-55 Cel	520 ns		.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				405 pF
SUM80090E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	180 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0105 ohm	128 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260
FQD13N10LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	95 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.2 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STL20N6F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	400 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		MATTE TIN	.0054 ohm	100 A	DUAL	S-PDSO-F5	1	DRAIN				e3		260
SUD50N06-09L-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	125 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0093 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
IRFZ24NSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.07 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED			30	260	65 pF
SI4162DY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	48 mJ	19.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	55 ns	Matte Tin (Sn)	.0079 ohm	19.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	95 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.