YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SCT2H12NYTB	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE				TIN	1.5 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN			TO-268AA	e3
SI7172DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	11.25 mJ	25 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.07 ohm	5.9 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIB452DK-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13 W	PLASTIC/EPOXY	SWITCHING	190 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	1.5 A		1.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.4 ohm		DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3
SIR624DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.25 mJ	18.6 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	48 ns		.064 ohm	18.6 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	8.3 pF
BSC010N04LSTATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	330 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0013 ohm	38 A	DUAL	R-PDSO-F8	1	DRAIN				e3
BSS169E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.36 W						DEPLETION MODE	1			.17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.17 A			1							260
C3M0065090J	Wolfspeed	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	110 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON CARBIDE					.078 ohm	35 A	SINGLE	R-PSSO-G7		DRAIN					NOT SPECIFIED	NOT SPECIFIED
FQT7N10TF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	50 mJ	1.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.35 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
IPB117N20NFDATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	336 A	375 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0117 ohm	84 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPD80P03P4L07ATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	135 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0068 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3				AEC-Q101
IRF7304TRPBF-1	Infineon Technologies	P-CHANNEL		YES	2 W										4.3 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.3 A			1
IRFS7537TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	700 A	554 mJ	173 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0033 ohm	173 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260
MGSF2N02ELT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260	45 pF
NTBG080N120SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	179 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	171 mJ	30 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE	44 ns	-55 Cel	52 ns	Matte Tin (Sn) - annealed	.11 ohm	30 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263CB	e3	30	245	7.9 pF
SQ2318AES-T1_BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	24 ns	-55 Cel	26.5 ns		.031 ohm	8 A	DUAL	R-PDSO-G3					TO-236AB				46 pF
STB40NF10LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	430 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-65 Cel		MATTE TIN	.036 ohm	40 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3		245
SUD50P10-43L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	61 mJ	37.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.043 ohm	9.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSP295L6327XT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.5 ohm	1.8 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FQD1N60CTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	33 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	11.5 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRF7309TRPBF-1	Infineon Technologies	N-CHANNEL AND P-CHANNEL		YES	1.4 W										4 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A			1
SI7430DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	64 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	7.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
AUIRF7309QTR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	40	260
BSC070N10NS5SCATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	328 A	73 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3 W	175 Cel	SILICON		-55 Cel		TIN	.007 ohm	82 A	DUAL	R-PDSO-N8	1	DRAIN				e3			28 pF
FDMC86260	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	48 A	121 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.034 ohm	5.4 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
IPB65R110CFDATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	99.6 A	845 mJ	31.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.11 ohm	31.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	NOT SPECIFIED	NOT SPECIFIED
IPD25N06S4L30ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	29 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	12 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.03 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3			32 pF	AEC-Q101
IRF7413TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		13 A			1					e3	30	260
IRF8313TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	81 A	46 mJ	9.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0155 ohm	9.7 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRFHS8342TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	76 A		8.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.016 ohm	8.8 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3	40	260
PSMN069-100YS,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	24 mJ	17 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0724 ohm	17 A	SINGLE	R-PSSO-G4	1	DRAIN			MO-235	e3	30	260		IEC-60134
SQJ488EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	1.68 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.021 ohm	42 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SQJQ480E-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	140 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.003 ohm	150 A	SINGLE	R-PSSO-G4		DRAIN				e3		260		AEC-Q101
BTS3046SDRATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		140 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.208 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
IRF9640STRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	125 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	700 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.5 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	10	260
IXTT120N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	2000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.016 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
NVMFD5C446NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	644 A	171 mJ	145 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0039 ohm	25 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	48 pF	AEC-Q101
PSMN018-80YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		45 A			1					e3	30	260
IRF7341QTRPBF	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ	5.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.05 ohm	5.1 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRFR9024TRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
NTTFS4C02NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	500 A	162 mJ	16 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0031 ohm	16 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	55 pF
PSMN014-40YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	56 W						ENHANCEMENT MODE	1			46 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		46 A			1					e3	30	260
SI7461DP	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	125 mJ	8.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	60 ns	-55 Cel	445 ns		.0145 ohm	8.6 A	DUAL	R-PDSO-F5		DRAIN
STB75NF75LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	680 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.013 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-263AB	e3	30	245
STD13N60M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.38 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
BSZ096N10LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.0096 ohm	11 A	DUAL	S-PDSO-N8	1	DRAIN				e3
FDS3992	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		167 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.062 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IPG20N04S4L08ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	145 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0082 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
IXTA120P065T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	298 W	PLASTIC/EPOXY	SWITCHING	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.01 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	505 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.