YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPG20N06S4L11ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	165 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0112 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
IPG20N06S4L26AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	35 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.026 ohm	20 A	DUAL	R-PDSO-F8	1	DRAIN				e3				AEC-Q101
IRF7341GTRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.05 ohm	5.1 A	DUAL	R-PDSO-G8	1			ULTRA LOW RESISTANCE	MS-012AA
NTMFS4C06NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	68 mJ	69 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.004 ohm	11 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	40 pF
NX3020NAKV,115	NXP Semiconductors	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		.2 A			1					e3	30	260
CSD18533Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	267 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0085 ohm	17 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	9 pF
DMN1019USN-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3	1					e3	30	260	375 pF
FDMS86500DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	317 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0023 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
IPB014N06NATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	420 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0014 ohm	34 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3
STD80N6F6	STMicroelectronics	N-CHANNEL	SINGLE	YES	120 W							1			80 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel							80 A									NOT SPECIFIED	NOT SPECIFIED
AUIRFR5410TRL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	66 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	194 mJ	13 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.205 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3	30	260
BSZ110N06NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.011 ohm	11 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3
FDS9958_F085	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	54 mJ	2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.105 ohm	2.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260		AEC-Q101
FDS9958-F085	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	54 mJ	2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.105 ohm	2.9 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260		AEC-Q101
IRF9389TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	34 A		6.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.027 ohm	6.8 A	DUAL	R-PDSO-G8	1				MS-012AA
IRLZ44ZSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	204 A	78 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0135 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
SQ7415CENW-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	64 A	26 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	24 ns	-55 Cel	72 ns		.065 ohm	16 A	DUAL	S-PDSO-F8		DRAIN							105 pF	AEC-Q101
SSM3K361RLF(T	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3										AEC-Q101
SSM3K361R,LF(T	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3										AEC-Q101
ATP302-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	197 mJ	70 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.018 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
BSC027N10NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	776 A	641 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3 W	175 Cel	SILICON		-55 Cel		TIN	.0027 ohm	194 A	DUAL	R-PDSO-N8	1	DRAIN				e3			75 pF
IPB017N10N5LF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	313 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	979 mJ	180 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0017 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3
BSC027N04LSGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	115 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0041 ohm	24 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3
FQT1N80TF-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.8 A	90 mJ	.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	100 ns	Matte Tin (Sn) - annealed	20 ohm	.2 A	DUAL	R-PDSO-G4	1	DRAIN				e3	30	260	5 pF
SQ2319ADS-T1_BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	8.4 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	36 ns	-55 Cel	54 ns		.075 ohm	4.6 A	DUAL	R-PDSO-G3					TO-236AB				70 pF	AEC-Q101
FCB36N60NTM	Onsemi	N-CHANNEL	SINGLE	YES	312 W			600 V			ENHANCEMENT MODE	1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed	.09 ohm	36 A			1					e3	30	245
IRF7749L2TR1PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	800 A	260 mJ	375 A	9	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.0015 ohm	33 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified			e1
SQJA68EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	4 mJ	14 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	25 ns	-55 Cel	40 ns		.092 ohm	14 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	20 pF	AEC-Q101
BSP171PL6327XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A	70 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.3 ohm	1.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3
FQD13N06LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	90 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.145 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRF4905SHR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	930 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.02 ohm	74 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE		e0
IRFZ48NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	190 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.014 ohm	64 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
NVMFS5A140PLZWFT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	560 A	420 mJ	140 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN	7.2 ohm	140 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
STL110N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	84 A	490 mJ	110 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.006 ohm	75 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260
BSZ110N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	40 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.011 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3
FDD8880	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		53 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF630NSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	82 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37 A	94 mJ	9.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.3 ohm	9.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
PMDXB600UNEZ	NXP Semiconductors	N-CHANNEL		YES	4.025 W						ENHANCEMENT MODE				.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.6 A
PSMN1R8-40YLC,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	272 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1128 A	248 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0021 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN		HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MO-235	e3	30	260
SISS27ADN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	31 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	45 ns	-55 Cel	102 ns		.0051 ohm	50 A	DUAL	S-PDSO-N5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	440 pF
AOD4189	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.022 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
BSP125H6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.48 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	45 ohm	.12 A	DUAL	R-PDSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE		e3				AEC-Q101
BSP135L6906HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.48 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					45 ohm	.12 A	DUAL	R-PDSO-G4		DRAIN
BSZ440N10NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	72 A	17 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.044 ohm	5.3 A	DUAL	S-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SI2318DS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	45 pF
SI7336ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A		30 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.003 ohm	30 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3
G3R75MT12J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	196 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	199 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			.097 ohm	38 A	SINGLE	R-PSSO-G7		DRAIN			TO-263					IEC-60747-8-4
IRF510SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.54 ohm	5.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.