Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
325 mJ |
8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0178 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10.4 A |
60 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.15 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.64 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
1.8 ohm |
.66 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e3 |
40 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
79 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
150 mJ |
17 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN OVER NICKEL |
.125 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
60 W |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
130 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.022 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
84 pF |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
823 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.023 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
550 A |
980 mJ |
130 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.007 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
340 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.65 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
21 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.05 ohm |
5.2 A |
DUAL |
R-PDSO-G8 |
1 |
ULTRA LOW RESISTANCE |
MS-012AA |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
230 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.9 ohm |
6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED, HIGH VOLTAGE |
TO-252AA |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
340 A |
120 mJ |
86 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.058 ohm |
86 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
DUAL |
R-PDSO-N8 |
DRAIN |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
130 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
185 mJ |
33 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.044 ohm |
33 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
340 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
79 ns |
TIN |
.38 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
e3 |
30 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
68 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0048 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
69 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
50 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.0039 ohm |
100 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
44 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
979 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.002 ohm |
120 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.022 ohm |
6.7 A |
DUAL |
R-PDSO-G8 |
1 |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 A |
60 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.052 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
57 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
13.4 ns |
-55 Cel |
44.3 ns |
TIN |
.8 ohm |
1 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
51 pF |
AEC-Q101 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
979 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.002 ohm |
29 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
200 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.004 ohm |
18 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
47 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0067 ohm |
15 A |
DUAL |
R-PDSO-F8 |
DRAIN |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
550 A |
980 mJ |
130 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
53 mJ |
11 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0119 ohm |
11 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
30 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
396 A |
170 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0083 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
118 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.0121 ohm |
14 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
280 mJ |
31 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.065 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
210 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN OVER NICKEL |
.025 ohm |
47 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
979 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0017 ohm |
180 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
100 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.0027 ohm |
23 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0179 ohm |
20 A |
DUAL |
S-PDSO-N8 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
69 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
280 mJ |
25 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN OVER NICKEL |
.065 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
55 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.007 ohm |
14 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
330 A |
120 mJ |
83 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.015 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
30 |
250 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
390 A |
480 mJ |
98 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.008 ohm |
110 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
TO-247AC |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
79 A |
110 mJ |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0134 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
125 A |
140 mJ |
31 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.039 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
27 A |
114 mJ |
3.4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.105 ohm |
3.4 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
29 A |
75 mJ |
3.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.073 ohm |
3.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
44 mJ |
13.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
155 Cel |
SILICON |
MATTE TIN |
.0091 ohm |
13.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
1230 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0015 ohm |
180 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
TO-263 |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
120 mJ |
12 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0119 ohm |
12 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
51 A |
670 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.29 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
32 A |
75 mJ |
8 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.195 ohm |
8 A |
BOTTOM |
O-MBCY-W3 |
DRAIN |
Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
MIL-19500 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
35 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.026 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
1430 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0019 ohm |
180 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
140 mJ |
70 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.02 ohm |
42 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY, AVALANCHE RATED |
TO-262AA |
e3 |
30 |
260 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.