Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
106 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0053 ohm |
22 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
231 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
135 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.009 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
TO-220 |
e3 |
9.1 pF |
||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.13 ohm |
3.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
48 pF |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
142 A |
231 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0043 ohm |
22 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
23 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
88 mJ |
56 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0126 ohm |
15 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
38 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
832 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0028 ohm |
200 A |
SINGLE |
R-PSSO-G3 |
2 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
55 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
17 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
20 A |
18 mJ |
5 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.042 ohm |
5 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
17 pF |
AEC-Q101 |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
92 A |
54 mJ |
73 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0173 ohm |
73 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
36 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
39 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0042 ohm |
22 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
102 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
154 A |
76 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0047 ohm |
21 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
195 pF |
|||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.4 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.25 ohm |
1.8 A |
BOTTOM |
R-PBGA-B3 |
1 |
DRAIN |
e4 |
30 |
260 |
11.1 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
480 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.00082 ohm |
59 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
1290 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
188 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
207 A |
106 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0122 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220 |
e3 |
12.5 pF |
||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
7.7 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.03 ohm |
10 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e4 |
30 |
260 |
51 pF |
||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
142 A |
24 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.0094 ohm |
14 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
NOT SPECIFIED |
260 |
73 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
125 mJ |
60 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0065 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
65 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
104 A |
61 mJ |
87 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0128 ohm |
87 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
45 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
39 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
163 A |
45 mJ |
65 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0161 ohm |
65 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
30 pF |
|||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
205 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.0023 ohm |
32 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e4 |
30 |
260 |
333 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
274 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0054 ohm |
100 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
73 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
360 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0044 ohm |
21 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
21 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
305 A |
211 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0079 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220 |
e3 |
16.1 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
135 A |
80 mJ |
81 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0072 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
80 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
39 A |
7.2 mJ |
22 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.029 ohm |
7.6 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e4 |
30 |
260 |
12 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
105 A |
14.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0133 ohm |
14 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
52 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
106 A |
14 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.0142 ohm |
11 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
NOT SPECIFIED |
260 |
49 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
106 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0053 ohm |
22 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
231 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
162 mJ |
60 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0085 ohm |
20 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
56 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
125 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0065 ohm |
22 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
65 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
115 A |
80 mJ |
60 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0078 ohm |
21 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
69 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
129 A |
45 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0073 ohm |
20 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
66 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
115 A |
80 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0078 ohm |
21 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
69 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
106 A |
14 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.0142 ohm |
11 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
NOT SPECIFIED |
260 |
49 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
105 A |
14.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0133 ohm |
14 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
52 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
216 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
281 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0053 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
TO-220 |
e3 |
14 pF |
||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
451 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0044 ohm |
150 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220 |
e3 |
38 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
72 mJ |
60 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0124 ohm |
15 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
55 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
132 A |
23 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0093 ohm |
16 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
75 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
218 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0035 ohm |
31 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
150 pF |
|||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
510 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0038 ohm |
200 A |
SINGLE |
R-PSSO-G3 |
2 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
34 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
236 A |
832 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0028 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
e3 |
55 pF |
|||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
108 A |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0091 ohm |
5 A |
BOTTOM |
S-PBGA-B9 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
440 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
132 A |
23 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0093 ohm |
16 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
75 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
616 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0029 ohm |
200 A |
SINGLE |
R-PSSO-G3 |
2 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
31 pF |
|||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.4 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.07 ohm |
5.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
23 pF |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
131 A |
80 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0078 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
69 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
328 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.0016 ohm |
42 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e4 |
30 |
260 |
551 pF |
|||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
345 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0017 ohm |
38 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
354 pF |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.