Texas Instruments Power Field Effect Transistors (FET) 334

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BF905

Texas Instruments

N-CHANNEL

SINGLE

YES

.15 W

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

TPIC5404NE

Texas Instruments

N-CHANNEL

COMPLEX

NO

2.08 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

10 A

21 mJ

2 A

16

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2.075 W

150 Cel

SILICON

95 ns

130 ns

.35 ohm

2 A

DUAL

R-PDIP-T16

ISOLATED

Not Qualified

MS-001

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC2601KTC

Texas Instruments

N-CHANNEL

COMMON SOURCE, 6 ELEMENTS WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

10 A

105 mJ

2 A

15

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

2 A

SINGLE

R-PSFM-G15

SOURCE

Not Qualified

ESD PROTECTED

TPIC5403DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

11.25 A

17.2 mJ

2.3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

85 ns

65 ns

.27 ohm

2.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

75 pF

TPIC1310KTS

Texas Instruments

N-CHANNEL

COMPLEX

NO

13.9 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

12 A

3 A

15

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.37 ohm

3 A

SINGLE

R-PSIP-T15

Not Qualified

ESD PROTECTED

NOT SPECIFIED

NOT SPECIFIED

TPIC5403DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

11.25 A

17.2 mJ

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

85 ns

65 ns

.27 ohm

2.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

75 pF

TPIC5424LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

3 A

180 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

132 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC5621LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

3 A

18 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

82 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

50 pF

TPIC1301DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

11.25 A

17.2 mJ

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

80 ns

65 ns

.275 ohm

2.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

75 pF

CSD17501Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

187 A

405 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0037 ohm

28 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

85 pF

CSD18511KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD18542KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

281 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

14 pF

CSD16403Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

184 A

224 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0037 ohm

28 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

160 pF

CSD17577Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

280 A

39 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

22 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

102 pF

CSD16413Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

156 A

106 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0056 ohm

24 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

109 pF

CSD22205LT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

8 V

BUTT

SQUARE

ENHANCEMENT MODE

1

71 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.04 ohm

7.4 A

BOTTOM

S-PBGA-B4

1

e4

30

260

250 pF

CSD17556Q5B

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

191 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

214 A

500 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

34 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

88 pF

CSD17551Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

85 A

31.3 mJ

48 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

13.5 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

24 pF

CSD17556Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

214 A

500 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

34 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

88 pF

CSD87313DMS

Texas Instruments

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

67 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

DUAL

S-PDSO-N6

1

SOURCE

AVALANCHE RATED

e3

30

260

200 pF

CSD16401Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0023 ohm

38 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

230 pF

CSD18511KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD17552Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

106 A

45 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

17 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

36 pF

CSD18534KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

98 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

111 A

72 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0133 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220

e3

6.5 pF

CSD18537NKCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

91 A

55 mJ

54 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.018 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

5.2 pF

CSD87312Q3E-ASY

Texas Instruments

N-CHANNEL

YES

2.5 W

27 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

XLMG3425R050RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

.055 ohm

QUAD

S-PQCC-N54

3

30

260

CSD17559Q5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

541 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0015 ohm

40 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

113 pF

CSD17555Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

153 A

180 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0034 ohm

24 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

87 pF

CSD87384M

Texas Instruments

N-CHANNEL

COMPLEX

YES

8 W

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

2

95 A

231 mJ

5

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.0089 ohm

BOTTOM

R-PBGA-B5

1

e4

NOT SPECIFIED

260

114 pF

CSD17505Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

153 A

290 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0046 ohm

24 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

85 pF

CSD16322Q5C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

136 A

125 mJ

97 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

97 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD85301Q2

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

26 A

3.8 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.039 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e3

30

260

62 pF

CSD17576Q5B

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

115 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0029 ohm

30 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e4

30

260

196 pF

CSD16322Q5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

136 A

125 mJ

97 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

21 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

70 pF

CSD23280F3

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

11.4 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.25 ohm

1.8 A

BOTTOM

R-PBGA-B3

1

DRAIN

e4

30

260

11.1 pF

CSD16556Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

249 A

530 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0015 ohm

40 A

DUAL

R-PDSO-N8

DRAIN

AVALANCHE RATED

280 pF

CSD17559Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

541 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0015 ohm

40 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

113 pF

CSD17553Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

151 A

101 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.004 ohm

23.5 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

60 pF

CSD87312Q3E

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

45 A

29 mJ

27 A

7

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.038 ohm

27 A

DUAL

S-PDSO-N7

1

SOURCE

AVALANCHE RATED, ULTRA-LOW RESISTANCE

e4

NOT SPECIFIED

260

16 pF

CSD16325Q5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

210 A

500 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0027 ohm

33 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

150 pF

CSD17327Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

85 A

45 mJ

65 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0155 ohm

13 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

33 pF

CSD17552Q3A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

84 A

45 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0081 ohm

15 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

NOT SPECIFIED

260

36 pF

CSD18532NQ5B

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

135 A

360 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0044 ohm

22 A

DUAL

R-PDSO-N5

1

DRAIN

AVALANCHE RATED

e3

30

260

21 pF

CSD18542KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

200 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

1.8

1

400 A

281 mJ

170 A

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

MATTE TIN

170 A

SINGLE

R-PSFM-T3

DRAIN

e3

14 pF

CSD17576Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

115 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0029 ohm

30 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e4

30

260

196 pF

CSD16556Q5B

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

249 A

530 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0015 ohm

40 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

280 pF

CSD18535KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

31 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.