Texas Instruments Power Field Effect Transistors (FET) 334

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
CSD13202Q2	Texas Instruments	N-CHANNEL	SINGLE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	76 A	20 mJ	22 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.0116 ohm	14.4 A	DUAL	S-PDSO-N6	1	DRAIN		AVALANCHE RATED		e4	30	260	56 pF
CSD18502KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	216 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	330 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0043 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220	e3			26 pF
CSD18504KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	93 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	133 A	88 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	53 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220	e3			10.4 pF
CSD83325LT	Texas Instruments	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	BUTT	RECTANGULAR	ENHANCEMENT MODE	2				6	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD			BOTTOM	R-PBGA-B6	1					e4	30	260	144 pF
CSD85302LT	Texas Instruments	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	BUTT	SQUARE	ENHANCEMENT MODE	2				4	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD			BOTTOM	S-PBGA-B4	1	SOURCE				e4	30	260	79 pF
CSD87313DMST	Texas Instruments	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2		67 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN			DUAL	S-PDSO-N6	1	SOURCE		AVALANCHE RATED		e3	30	260	200 pF
XLMG3410R050RWHT	Texas Instruments	N-CHANNEL		YES		PLASTIC/EPOXY	SWITCHING	480 V	NO LEAD	SQUARE	DEPLETION MODE		130 A			32	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE		-40 Cel				12 A	QUAD	S-PQCC-N32
XLMG3410R150RWHT	Texas Instruments	N-CHANNEL		YES		PLASTIC/EPOXY	SWITCHING	480 V	NO LEAD	SQUARE	DEPLETION MODE					32	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE		-40 Cel				6 A	QUAD	S-PQCC-N32
CSD16407Q5	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	218 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0033 ohm	31 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	160 pF
CSD17507Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	85 A	145 mJ	65 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0161 ohm	13 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	30 pF
CSD18536KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	819 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0022 ohm	200 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220	e3			51 pF
CSD18542KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	281 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0051 ohm	200 A	SINGLE	R-PSSO-G3	2	DRAIN		AVALANCHE RATED		e3	30	260	14 pF
CSD22206W	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	8 V	BALL	SQUARE	ENHANCEMENT MODE	1	108 A			9	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.0091 ohm	5 A	BOTTOM	S-PBGA-B9	1			ULTRA LOW RESISTANCE		e1	30	260	440 pF
CSD87384MT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	30 V	BUTT	RECTANGULAR	ENHANCEMENT MODE	2	95 A	231 mJ		5	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	.0089 ohm		BOTTOM	R-PBGA-B5	1					e4	NOT SPECIFIED	260	114 pF
LMG3422R030RQZR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			55 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.035 ohm		QUAD	S-PQCC-N54	3					e4		260
XLMG3422R030RQZT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			55 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.035 ohm		QUAD	S-PQCC-N54						e4
XLMG3425R030RQZT	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			55 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.035 ohm		QUAD	S-PQCC-N54						e4
CSD16410Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	158 A	51 mJ	59 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	16 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	52 pF
CSD17318Q2	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	68 A	7.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.03 ohm	10 A	DUAL	R-PDSO-N8	1	DRAIN				e4	30	260	51 pF
CSD17570Q5BT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	360 A	450 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.00092 ohm	53 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	1140 pF
CSD17581Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	256 A	76 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0042 ohm	24 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	195 pF
CSD18511Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	157 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0035 ohm	27 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	309 pF
CSD18512Q5B	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	205 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.0023 ohm	32 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e4	30	260	333 pF
CSD85301Q2T	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	26 A	3.8 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.039 ohm	5 A	DUAL	S-PDSO-N6	1	DRAIN		AVALANCHE RATED		e3	30	260	62 pF
CSD87501LT	Texas Instruments	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	BUTT	RECTANGULAR	ENHANCEMENT MODE	2				10	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD			BOTTOM	R-PBGA-B10	1					e4	30	260	198 pF
LMG3422R050RQZR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			44 A	54	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	56 ns	-40 Cel	86 ns	NICKEL PALLADIUM GOLD	.055 ohm		QUAD	S-PQCC-N54	3					e4	30	260
XLMG3410RWHT	Texas Instruments	N-CHANNEL		YES		PLASTIC/EPOXY	SWITCHING	480 V	NO LEAD	SQUARE	DEPLETION MODE		32 A			32	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE		-40 Cel				12 A	QUAD	S-PQCC-N32
CSD16570Q5B	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	480 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.00082 ohm	59 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	1290 pF
CSD17311Q5	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	638 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0031 ohm	32 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	110 pF
CSD17581Q3A	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	154 A	76 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0047 ohm	21 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED		e3	30	260	195 pF
CSD18503KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	143 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	155 A	162 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0068 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220	e3			16 pF
CSD19505KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	510 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0038 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220	e3			34 pF
CSD19531KCS	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	179 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	285 A	180 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0088 ohm	100 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220	e3			17 pF
CSD19505KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	510 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0038 ohm	200 A	SINGLE	R-PSSO-G3	2	DRAIN		AVALANCHE RATED		e3	30	260	34 pF
CSD23285F5	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		UNSPECIFIED	SWITCHING	12 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	31 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.13 ohm	3.3 A	BOTTOM	R-XBCC-N3	1					e4	30	260	48 pF
XLMG3526R030RQST	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	650 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1			55 A	52	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	58.3 ns	-40 Cel	91 ns		.035 ohm		QUAD	S-PQCC-N52
CSD17522Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	54 mJ	87 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0124 ohm	16 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	44 pF
TPIC5201KC	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	SINGLE	R-PSFM-T7			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPS1110D	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	7 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns		36 ns		.075 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
TPIC5323LD	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	22.5 mJ	1 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	80 ns		95 ns		.65 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	28 pF
TPIC5401NE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.08 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	2 A	DUAL	R-PDIP-T16			Not Qualified	ESD PROTECTED	MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5303D	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	5 A	10.2 mJ	1.4 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.08 W	150 Cel	SILICON	65 ns		54 ns		.46 ohm	1.4 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	ESD PROTECTED	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	28 pF
C2T206	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.05 A
TPIC5322LDR	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	40.5 mJ		16	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	52 ns		66 ns		.525 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC				40 pF
TPIC2301KV	Texas Instruments	N-CHANNEL	COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	3	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	ZIG-ZAG	R-PZFM-T7		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPIC5404DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC				125 pF
TPIC5423LDWR	Texas Instruments	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	4 A	96 mJ		24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		70 ns	NICKEL PALLADIUM GOLD	.375 ohm	1.25 A	DUAL	R-PDSO-G24	1	ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD	e4			75 pF
C2T211	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							.05 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.