Texas Instruments Power Field Effect Transistors (FET) 334

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TPIC5404DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC2701MJB	Texas Instruments	N-CHANNEL	COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE	NO		CERAMIC, GLASS-SEALED	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	7	3 A	22 mJ		24	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.9 ohm	.5 A	DUAL	R-GDIP-T24			Not Qualified
TPIC5423LDW	Texas Instruments	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	4 A	96 mJ	1.25 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		70 ns		.375 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5621LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	3 A	18 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		82 ns		.48 ohm	1 A	DUAL	R-PDSO-G20			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC				50 pF
TPIC5421LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1.5 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC1501ADW	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	ENHANCEMENT MODE	11	12 A			24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.86 W	150 Cel	SILICON					.45 ohm	3 A	DUAL	R-PDSO-G24			Not Qualified		MS-013AD
TPIC5421LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-013AC				125 pF
TPIC2701N	Texas Instruments	N-CHANNEL	COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	7	3 A	22 mJ		16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	.5 A	DUAL	R-PDIP-T16			Not Qualified		MS-001BB		NOT SPECIFIED	NOT SPECIFIED
TPIC5601DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	8 A	36 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC		NOT SPECIFIED	NOT SPECIFIED	50 pF
TPIC5401DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20			Not Qualified	ESD PROTECTED	MS-013AC				125 pF
BF910	Texas Instruments	N-CHANNEL	SINGLE	YES	.33 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.05 A
TPIC2601KTD	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	10 A	105 mJ	2 A	15	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.3 ohm	2 A	SINGLE	R-PSSO-G15			Not Qualified	ESD PROTECTED, AVALANCHE RATED
C2T204	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.05 A
TPIC5303DR	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	5 A	10.2 mJ		16	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.08 W	150 Cel	SILICON	65 ns		54 ns		.46 ohm	1.4 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	ESD PROTECTED	MS-012AC				28 pF
C2T212	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							.05 A
TPIC5323LDR	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	22.5 mJ		16	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	80 ns		95 ns		.65 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED	MS-012AC				28 pF
TPIC1301DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	11.25 A	17.2 mJ	2.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	80 ns		65 ns		.275 ohm	2.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC1321LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	4 A	96 mJ		24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		180 ns		.4 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD				75 pF
CSD58887Q3	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	115 A	80 mJ	60 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0078 ohm	21 A	DUAL	S-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260
TPIC5424LNE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.08 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDIP-T16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
XMG3522R030QRQSTQ1	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	520 V	NO LEAD	SQUARE	ENHANCEMENT MODE				55 A	52	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		125 Cel	GALLIUM NITRIDE	9 ns	-40 Cel	33 ns		.039 ohm		QUAD	S-PQCC-N52										AEC-Q100; IEC-61000-4-5
3N203A	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							.05 A
TPIC2202KC	Texas Instruments	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	5	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	SINGLE	R-PSFM-T5		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BF353	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							.05 A
TPIC1321LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	4 A	96 mJ	1.3 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		180 ns		.4 ohm	1.25 A	DUAL	R-PDSO-G24		ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5201KV	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	.75 A	ZIG-ZAG	R-PZFM-T7			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPIC5421LNE	Texas Instruments	N-CHANNEL	COMPLEX	NO	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1.5 A	16	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.075 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1.5 A	DUAL	R-PDIP-T16		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-001		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5601DWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	8 A	36 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified		MS-013AC				50 pF
TPS1110DR	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	7 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns		36 ns		.075 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
BF907	Texas Instruments	N-CHANNEL	SINGLE									1			.04 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.04 A
C2T213	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							.05 A
BF352	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							.05 A
TPIC1501ADWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	ENHANCEMENT MODE	11	12 A			24	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.86 W	150 Cel	SILICON					.45 ohm	3 A	DUAL	R-PDSO-G24			Not Qualified		MS-013AD
TPIC5401DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20			Not Qualified	ESD PROTECTED	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
CSD75211W1723	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A		4.5 A	12	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.07 ohm	4.5 A	BOTTOM	R-PBGA-B12	1		Not Qualified			e1	30	260
TPIC5302D	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	.87 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	7 A	10.5 mJ	1.4 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.087 W	150 Cel	SILICON	56 ns		84 ns		.35 ohm	1.4 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified		MS-012AC		NOT SPECIFIED	NOT SPECIFIED	40 pF
TPIC5322LD	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	40.5 mJ	1 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	52 ns		66 ns		.525 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	40 pF
TPS1110Y	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	7 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	24 A			6	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.065 ohm	6 A	UPPER	R-XUUC-N6			Not Qualified	LOGIC LEVEL COMPATIBLE
BF900	Texas Instruments	N-CHANNEL	SINGLE	YES	.15 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.05 A
TPIC1310KTR	Texas Instruments	N-CHANNEL	COMPLEX	YES	13.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	12 A		3 A	15	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.37 ohm	3 A	SINGLE	R-PSSO-G15			Not Qualified	ESD PROTECTED
TPIC2701J	Texas Instruments	N-CHANNEL		NO	2.66 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel
TPIC2401KTA	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	6 A	36 mJ	1.5 A	9	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.36 ohm	1.5 A	SINGLE	R-PSSO-G9			Not Qualified	ESD PROTECTED
TPIC5302DR	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	7 A	10.5 mJ		16	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.087 W	150 Cel	SILICON	56 ns		84 ns		.35 ohm	1.4 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified		MS-012AC				40 pF
TPIC2701MJ	Texas Instruments	N-CHANNEL	COMPLEX	NO		CERAMIC, GLASS-SEALED		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	7	3 A	22 mJ		24	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.8 ohm	.5 A	DUAL	R-GDIP-T24			Not Qualified
TPIC5424LDWR	Texas Instruments	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ		20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	110 ns		132 ns		.48 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-013AC				125 pF
C2T205	Texas Instruments	N-CHANNEL	SINGLE	YES	.3 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.05 A
BF351	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							.05 A
3N225	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W							1			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							.05 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.