.75 W Small Signal Field Effect Transistors (FET) 59

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSH103,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

SI2315BDS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

200 pF

BSH103

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

SI2325DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.53 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.3 ohm

.53 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

16 pF

SI2312BDS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

3.9 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BSH103,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

SI2325DS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.53 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.3 ohm

.53 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

16 pF

SI2312BDS-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

3.9 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BSH103T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

SI2325DS-T1-BE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.3 ohm

.53 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

16 pF

SI2312BDS-T1-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

3.9 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

FDG312P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.18 ohm

1.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTMD6P02R2G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.033 ohm

4.8 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e3

30

260

450 pF

SI2315BDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

200 pF

FDG315N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDG316P_NL

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

1.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

CSD75205W1015

Texas Instruments

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.75 W

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

2

1.2 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

1.2 A

BOTTOM

R-XBGA-B6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

33 pF

FDG328P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDG332PZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.095 ohm

.0026 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

115 pF

FDG311N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.9 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.105 ohm

1.9 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDG316P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

1.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTMD6P02R2

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.033 ohm

4.8 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e0

235

450 pF

BSH102

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.85 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

.85 A

DUAL

R-PDSO-G3

Not Qualified

LOW THRESHOLD

ZVN4424C

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

.26 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5.5 ohm

.26 A

SINGLE

R-PSIP-W3

Not Qualified

LOW THRESHOLD

TO-92

15 pF

TPCS8211

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.024 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e4

TPCS8302

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.095 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

e4

SSM6J216FE(TPL3,F)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.75 W

150 Cel

SILICON

.032 ohm

4.8 A

DUAL

R-PDSO-F6

1040 pF

SSM6J216FE(TPL3)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.75 W

150 Cel

SILICON

.032 ohm

4.8 A

DUAL

R-PDSO-F6

1040 pF

SSM6J216FE

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.75 W

150 Cel

SILICON

.032 ohm

4.8 A

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

1040 pF

2SJ196-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.5 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

GATE PROTECTED

e1

10

260

UPA2354T1G-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

2SK679A-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

GATE PROTECTED

e1

10

260

HS54097TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

600 V

WIRE

ROUND

ENHANCEMENT MODE

1

.15 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ohm

.15 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

RJK6011DJA-00#Z0

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NOT SPECIFIED

NOT SPECIFIED

2SK679

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

1 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SJ196

Renesas Electronics

P-CHANNEL

SINGLE

NO

.75 W

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1 A

e0

UPA2352BT1G-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

2SJ178

Renesas Electronics

P-CHANNEL

SINGLE

NO

.75 W

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1 A

e0

2SJ198

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

GATE PROTECTED

e0

HS54095TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

600 V

WIRE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

16.5 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

UPA2354T1P-E4-A

Renesas Electronics

N-CHANNEL

YES

.75 W

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

UPA2352T1P-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

2SK679A

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.5 A

e0

UPA2352T1G-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

UNSPECIFIED

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-X4

Not Qualified

e6

RJK6029DJA-00-Z0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

16.5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

UPA2352BT1P-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

2SK4148-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SK4036

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.5 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.