YES Small Signal Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSH103,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

SI2304DDS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

3.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

FDY302NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.625 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.3 ohm

.6 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

IRLML2803TRHR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.25 ohm

1.2 A

DUAL

R-PDSO-G3

Not Qualified

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-236AB

e0

SI4463CDY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.008 ohm

18.6 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

BF862T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN

.04 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

BSH114,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.85 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.5 ohm

.85 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

FDS2670

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

SI3932DV-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.7 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.058 ohm

3.7 A

DUAL

R-PDSO-G6

1

e3

30

260

BSL316CH6327XTSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.16 ohm

1.4 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

260

7 pF

AEC-Q101

BSS131L6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.11 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

14 ohm

.11 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

4.2 pF

DMN6140LQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.14 ohm

1.6 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

16 pF

AEC-Q101

FDG6301ND87Z

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.22 A

DUAL

R-PDSO-G6

Not Qualified

LOGIC LEVEL COMPATIBLE

PMV48XP,215

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.055 ohm

3.5 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

IEC-60134

SSM3J332R,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.042 ohm

6 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

ZXMS6004SGTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.6 ohm

DUAL

R-PDSO-G4

1

SOURCE

HIGH RELIABILITY

e3

30

260

AEC-Q101

BSS308PEL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

2 A

DUAL

R-PDSO-G3

18 pF

AEC-Q101

NTK3043NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.545 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.255 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.8 ohm

.21 A

DUAL

R-PDSO-F3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

SI2325DS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.53 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.3 ohm

.53 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

16 pF

2N7002E-7-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.24 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3 ohm

.25 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

SI2374DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.03 ohm

5.9 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

40 pF

NX3008NBKSH

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-50 Cel

TIN

1.4 ohm

.35 A

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

SI2333DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.032 ohm

4.1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

300 pF

BSD235NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.35 ohm

.95 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

AEC-Q101

L2N7002KWT1G

Leshan Radio

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

2.3 ohm

.32 A

DUAL

R-PDSO-G3

1

e3

260

SI2338DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.028 ohm

6 A

DUAL

R-PDSO-G3

1

TO-236AB

260

42 pF

2N7002LT1H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

5 pF

FDG6301N_NL

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.22 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

FDS9431A_NL

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.22 ohm

3.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

SN7002NH6433XTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.2 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

4.2 pF

FDN357N_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

1.9 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

NVR5198NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

1

2.2 A

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.205 ohm

2.2 A

1

e3

30

260

SI4816BDY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0185 ohm

5.8 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

FDC2612

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.725 ohm

1.1 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDN352AP_NL

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

1.3 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

SI4056DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

.023 ohm

7.3 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

SSM3J328R,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0298 ohm

6 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

2N7002E-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.24 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

3 ohm

.24 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

FDS6680A_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

MATTE TIN

.0095 ohm

12.5 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

SI2308CDS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.144 ohm

2.6 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

BSS84AK

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

8.5 ohm

.18 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

DMN3190LDW-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.19 ohm

1 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

IRLML6302TRPBF-1

Infineon Technologies

P-CHANNEL

SINGLE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.78 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.54 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

.78 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

28 pF

NTTFS4C10NTWG

Onsemi

N-CHANNEL

SINGLE

YES

23.6 W

1

44 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

44 A

1

e3

30

260

BSS308PE

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.08 ohm

2 A

DUAL

R-PDSO-G3

1

e3

18 pF

AEC-Q101

BSN20,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

20 ohm

.173 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

8 pF

BSS138DWQ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.2 A

DUAL

R-PDSO-G6

1

e3

30

260

8 pF

AEC-Q101

FDN359AN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.046 ohm

2.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.