Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
AMPLIFIER |
50 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.03 A |
4 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.03 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.84 W |
PLASTIC/EPOXY |
SWITCHING |
15 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.17 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
NICKEL PALLADIUM GOLD |
.4 ohm |
1.17 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
e4 |
30 |
260 |
||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.36 W |
PLASTIC/EPOXY |
CHOPPER |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
25 ohm |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
8 pF |
||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
CHOPPER |
35 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.03 A |
4 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
600 ohm |
.03 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.504 W |
PLASTIC/EPOXY |
SWITCHING |
15 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.27 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
1.27 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
e4 |
30 |
260 |
|||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
.02 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
.04 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-5 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
YES |
.27 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.36 W |
METAL |
SWITCHING |
20 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
.05 A |
4 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
70 ohm |
.05 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
2 pF |
|||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
1000 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
LOW NOISE |
TO-5 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.36 W |
METAL |
SWITCHING |
20 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
.05 A |
4 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
50 ohm |
.05 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
|||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
.04 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.791 W |
PLASTIC/EPOXY |
SWITCHING |
15 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
1.6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
MS-012AA |
e4 |
30 |
260 |
||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.791 W |
PLASTIC/EPOXY |
SWITCHING |
15 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.3 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
.791 W |
150 Cel |
SILICON |
-40 Cel |
NICKEL PALLADIUM GOLD |
.19 ohm |
2.3 A |
DUAL |
R-PDSO-G8 |
1 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
MS-012AA |
e4 |
30 |
260 |
|||||||||||||||
Texas Instruments |
P-CHANNEL |
YES |
.27 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.95 W |
150 Cel |
SILICON |
.7 ohm |
.75 A |
DUAL |
R-PDSO-G8 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
40 pF |
||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.36 W |
METAL |
CHOPPER |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
40 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.95 W |
150 Cel |
SILICON |
.475 ohm |
1 A |
DUAL |
R-PDSO-G8 |
ISOLATED |
Not Qualified |
MS-012AA |
40 pF |
|||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
LOW NOISE |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 |
.75 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.95 W |
150 Cel |
SILICON |
.7 ohm |
.75 A |
DUAL |
R-PDSO-G8 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
NOT SPECIFIED |
NOT SPECIFIED |
40 pF |
|||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.3 W |
METAL |
SWITCHING |
50 V |
WIRE |
ROUND |
DEPLETION MODE |
2 |
7 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
500 ohm |
BOTTOM |
O-MBCY-W7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
4 pF |
||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.25 W |
METAL |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
2 |
6 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W6 |
ISOLATED |
Not Qualified |
TO-71 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
|||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
SWITCHING |
15 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
UPPER |
R-XUUC-N8 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
|||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
.3 W |
METAL |
CHOPPER |
25 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
2 |
.1 A |
8 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
400 ohm |
.1 A |
BOTTOM |
O-MBCY-W8 |
ISOLATED |
Not Qualified |
TO-76 |
2.5 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.25 W |
METAL |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
2 |
6 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W6 |
ISOLATED |
Not Qualified |
TO-71 |
NOT SPECIFIED |
NOT SPECIFIED |
4 pF |
|||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.791 W |
PLASTIC/EPOXY |
SWITCHING |
15 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.3 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.19 ohm |
2.3 A |
DUAL |
R-PDSO-G8 |
1 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
e4 |
30 |
260 |
||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.36 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
25 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
8 pF |
|||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
.138 ohm |
2.2 A |
BOTTOM |
S-PBGA-B4 |
1 |
e1 |
30 |
260 |
42 pF |
||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
600 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
LOW NOISE |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
NO |
.3 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.36 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
40 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W4 |
ISOLATED |
Not Qualified |
LOW NOISE |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
SWITCHING |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
175 Cel |
SILICON |
BOTTOM |
O-MBCY-W4 |
ISOLATED |
Not Qualified |
LOW NOISE |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.36 W |
PLASTIC/EPOXY |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
2 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
4 pF |
||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.36 W |
METAL |
CHOPPER |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
40 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
8 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
2 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
|||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 |
.75 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.95 W |
150 Cel |
SILICON |
.7 ohm |
.75 A |
DUAL |
R-PDSO-G8 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
NOT SPECIFIED |
NOT SPECIFIED |
40 pF |
|||||||||||||||||||
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
2.86 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
11 |
1.5 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
.3 ohm |
.005 A |
DUAL |
R-PDSO-G24 |
Not Qualified |
|||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
SWITCHING |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
175 Cel |
SILICON |
BOTTOM |
O-MBCY-W4 |
ISOLATED |
Not Qualified |
LOW NOISE |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
|||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
AMPLIFIER |
50 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.03 A |
4 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.03 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.