Texas Instruments Small Signal Field Effect Transistors (FET) 265

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

3N157

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

TPS1120DG4

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.84 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.17 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.4 ohm

1.17 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

2N5198

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TIS73

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

25 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

3N155

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

600 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

TPS1100PWG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.504 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.27 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.27 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

2N3328

Texas Instruments

P-CHANNEL

NO

.02 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N3575

Texas Instruments

P-CHANNEL

NO

.04 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N2386A

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

C5T3993

Texas Instruments

P-CHANNEL

YES

.27 W

FET General Purpose Small Signal

JUNCTION

150 Cel

3N217

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

70 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

2 pF

2N2497

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

1000 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N5519

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

3N216

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

50 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5515

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N3333

Texas Instruments

P-CHANNEL

NO

.04 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TPS1100DRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.6 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TPS1101D

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.791 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

C5T3994

Texas Instruments

P-CHANNEL

YES

.27 W

FET General Purpose Small Signal

JUNCTION

150 Cel

TPIC2322LDR

Texas Instruments

N-CHANNEL

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.7 ohm

.75 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

40 pF

2N4860A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

40 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

TPIC3302DR

Texas Instruments

N-CHANNEL

COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.475 ohm

1 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

MS-012AA

40 pF

2N3460

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

TPIC3322LD

Texas Instruments

N-CHANNEL

COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

.75 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.7 ohm

.75 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

40 pF

2N3954A

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TIS25

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5547

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

TPS1101Y

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

15 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

8

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

UPPER

R-XUUC-N8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

3N208

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

2

.1 A

8

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

400 ohm

.1 A

BOTTOM

O-MBCY-W8

ISOLATED

Not Qualified

TO-76

2.5 pF

TPIC1504DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

2N5046

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

TPS1101DG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

2N4856

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

25 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

HPA00788W10

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.138 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

e1

30

260

42 pF

2N2609

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

600 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N2607

Texas Instruments

P-CHANNEL

NO

.3 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N4857A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

40 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

2N3332

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N5523

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N5362

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

TIS70

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N4860

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

40 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

TPIC1504DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

2 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

TPIC2322LD

Texas Instruments

N-CHANNEL

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

.75 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.7 ohm

.75 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

40 pF

TPIC1502DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.3 ohm

.005 A

DUAL

R-PDSO-G24

Not Qualified

2N5361

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N3955A

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

3N157A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.