Texas Instruments Small Signal Field Effect Transistors (FET) 265

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N4093

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

80 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N5018

Texas Instruments

P-CHANNEL

NO

1.8 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5546

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5520

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

3N164

Texas Instruments

P-CHANNEL

SINGLE

NO

.375 W

METAL

CHOPPER

30 V

WIRE

ROUND

ENHANCEMENT MODE

1

.05 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

300 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.7 pF

2N3336

Texas Instruments

P-CHANNEL

NO

.04 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N3957

Texas Instruments

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5197

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

A5T5461

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

800 ohm

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2 pF

TIS26

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N3330

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

800 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

A5T6449

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

2N4861A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

2N3954

Texas Instruments

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

3N161

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.125 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.125 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

4 pF

TPS1100PWRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.504 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.27 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.27 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

JFE150DCKT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

MATTE TIN

DUAL

R-PDSO-G5

1

e3

260

7 pF

3N170

Texas Instruments

N-CHANNEL

SINGLE

NO

.8 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

200 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N3331

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

600 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N6451

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N2499

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

600 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

A8T6449

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-226AA

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

2N5196

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TPIC2302DR

Texas Instruments

N-CHANNEL

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.475 ohm

1 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

MS-012AA

40 pF

TIS74

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

40 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

TIS69

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N3971

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

6 pF

2N2386

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

TPIC3322LDR

Texas Instruments

N-CHANNEL

COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.7 ohm

.75 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AA

40 pF

2N5199

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TPS1120D

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.84 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.17 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.4 ohm

1.17 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

2N3956

Texas Instruments

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TPIC1505DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.48 ohm

1 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

2N5516

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2N3578

Texas Instruments

P-CHANNEL

NO

.3 W

FET General Purpose Small Signal

JUNCTION

200 Cel

TPIC1533DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

1.5 A

DUAL

R-PDSO-G24

Not Qualified

A8T6450

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-226AA

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

TPIC5223LDR

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.43 ohm

1 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

ESD PROTECTED, LOGIC LEVEL COMPATIBLE

MS-012AA

50 pF

JFE150DBVR

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G5

7 pF

JFE150DBVT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G5

7 pF

CSD25304W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.092 ohm

3 A

BOTTOM

R-XBGA-B6

1

e1

30

260

15.6 pF

CSD75205W1015

Texas Instruments

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.75 W

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

2

1.2 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

1.2 A

BOTTOM

R-XBGA-B6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

33 pF

CSD75204W15

Texas Instruments

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.7 W

UNSPECIFIED

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

3 A

9

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 A

BOTTOM

S-XBGA-B9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 pF

CSD23381F4

Texas Instruments

SINGLE

YES

UNSPECIFIED

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2.3 A

GRID ARRAY

150 Cel

-55 Cel

NICKEL GOLD

2.3 A

BOTTOM

R-XBGA-N3

1

e4

30

260

CSD23203W

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.053 ohm

3 A

BOTTOM

R-PBGA-B6

1

e1

30

260

172 pF

CSD23381F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.35 W

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.3 ohm

2.3 A

BOTTOM

R-PBGA-B3

1

ULTRA LOW RESISTANCE

e4

30

260

CSD25481F4

Texas Instruments

P-CHANNEL

SINGLE

YES

.5 W

UNSPECIFIED

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

NICKEL GOLD

2.5 A

BOTTOM

R-XBGA-N3

1

e4

30

260

CSD75301W1015

Texas Instruments

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

2

1.2 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.19 ohm

1.2 A

BOTTOM

R-PBGA-B6

1

Not Qualified

e1

30

260

31 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.