Texas Instruments Small Signal Field Effect Transistors (FET) 265

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5461

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

800 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2 pF

CSD23202W10T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.123 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

e1

30

260

37 pF

CSD25304W1015T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.092 ohm

3 A

BOTTOM

R-XBGA-B6

1

e1

30

260

15.6 pF

CSD13302W

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

CSD25480F3

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.26 ohm

1.7 A

BOTTOM

R-PBGA-B3

1

e4

30

260

4.7 pF

CSD25481F4R

Texas Instruments

P-CHANNEL

SINGLE

YES

.5 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

NOT SPECIFIED

NOT SPECIFIED

CSD25303W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.092 ohm

3 A

BOTTOM

R-PBGA-B6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

65 pF

2N3824

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

50 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

250 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

3 pF

CSD25211W1015

Texas Instruments

P-CHANNEL

SINGLE

YES

1 W

UNSPECIFIED

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.044 ohm

3.2 A

BOTTOM

R-XBGA-B6

1

e1

30

260

CSD25483F4R

Texas Instruments

NOT SPECIFIED

NOT SPECIFIED

CSD23381F4R

Texas Instruments

NOT SPECIFIED

NOT SPECIFIED

CSD13383F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.065 ohm

2.9 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

61 pF

CSD23201W10

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

1.1 A

4

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.138 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

Not Qualified

e1

30

260

42 pF

CSD13302WT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

2N3822

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

CSD23203WT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.053 ohm

3 A

BOTTOM

R-PBGA-B6

1

e1

30

260

172 pF

CSD13381F4R

Texas Instruments

N-CHANNEL

SINGLE

YES

.5 W

1

2.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NOT SPECIFIED

NOT SPECIFIED

CSD25202W15

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.052 ohm

4 A

BOTTOM

S-PBGA-B9

1

e1

30

260

27 pF

CSD17483F4R

Texas Instruments

N-CHANNEL

SINGLE

YES

.5 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

2N3821

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

CSD13385F5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.023 ohm

4.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

38 pF

CSD13303W1015

Texas Instruments

N-CHANNEL

SINGLE

YES

1.65 W

UNSPECIFIED

12 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.023 ohm

3.5 A

BOTTOM

R-XBGA-B6

1

e1

30

260

CSD25301W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.22 ohm

2.2 A

BOTTOM

R-PBGA-B6

1

Not Qualified

e1

30

260

40 pF

CSD25213W10

Texas Instruments

P-CHANNEL

SINGLE

YES

1 W

UNSPECIFIED

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.067 ohm

1.6 A

BOTTOM

S-XBGA-B4

1

e1

30

260

2N4858A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.