Texas Instruments Small Signal Field Effect Transistors (FET) 265

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

A5T6450

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

3N169

Texas Instruments

N-CHANNEL

SINGLE

NO

.8 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

200 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

3N163

Texas Instruments

P-CHANNEL

SINGLE

NO

.375 W

METAL

CHOPPER

40 V

WIRE

ROUND

ENHANCEMENT MODE

1

.05 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

250 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.7 pF

TPIC1505DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

11

1.5 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.48 ohm

1 A

DUAL

R-PDSO-G24

Not Qualified

MS-013AD

2N4858

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

2N3335

Texas Instruments

P-CHANNEL

NO

.04 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N3458

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N3993A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

150 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

3 pF

2N5517

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

TPS1101PWLE

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.71 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.18 A

16

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

2.18 A

DUAL

R-PDSO-G16

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

NOT SPECIFIED

NOT SPECIFIED

2N5518

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

TPS1120Y

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

15 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

1.17 A

UPPER

R-XUUC-N5

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

2N2500

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N3329

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

1000 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N2498

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

800 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N5359

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N4856A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

25 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

4 pF

TPS1101PW

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

2.18 A

DUAL

R-PDSO-G16

Not Qualified

ESD PROTECTED

2N3459

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

TPS1101DR

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.62 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.791 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TIS58

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

3 pF

TIS27

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.3 W

METAL

SWITCHING

50 V

WIRE

ROUND

DEPLETION MODE

2

7

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

500 ohm

BOTTOM

O-MBCY-W7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N3966

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

220 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.5 pF

3N158

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

TPIC5203DR

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.962 W

150 Cel

SILICON

.31 ohm

1.6 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

ESD PROTECTED

MS-012AA

125 pF

2N3994A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

300 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

3.5 pF

2N5545

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5360

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N5019

Texas Instruments

P-CHANNEL

NO

1.8 W

FET General Purpose Small Signal

JUNCTION

200 Cel

3N160

Texas Instruments

P-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.125 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.125 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N5521

Texas Instruments

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

A5T3824

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

CHOPPER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

250 ohm

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N2608

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

1000 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N6454

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

5 pF

2N2606

Texas Instruments

P-CHANNEL

NO

.3 W

FET General Purpose Small Signal

JUNCTION

200 Cel

3N215

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

35 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

3N155A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

300 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

TPS1101DRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.62 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

3N156A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

300 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N5358

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

TPIC2302D

Texas Instruments

N-CHANNEL

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.95 W

150 Cel

SILICON

.475 ohm

1 A

DUAL

R-PDSO-G8

ISOLATED

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

40 pF

2N5047

Texas Instruments

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.25 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W6

ISOLATED

Not Qualified

TO-71

NOT SPECIFIED

NOT SPECIFIED

4 pF

TPIC1533DWR

Texas Instruments

N-CHANNEL

COMPLEX

YES

2.86 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

1.5 A

DUAL

R-PDSO-G24

Not Qualified

TPS1120DRG4

Texas Instruments

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.84 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.17 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.17 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TPS1100Y

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

15 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

UPPER

R-XUUC-N5

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

JFE2140DR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

8

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.05 A

DUAL

R-PDSO-G8

2

MS-012AA

e4

260

3N156

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

600 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

TPS1101PWR

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.71 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.18 A

16

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.71 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.18 A

DUAL

R-PDSO-G16

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.