Military Programmable Logic Devices (PLD) 1,614

Reset All
Part RoHS Manufacturer Programmable IC Type Grading Of Temperature Form Of Terminal No. of Terminals Package Code Package Shape Package Body Material Propagation Delay No. of Logic Cells Surface Mount Maximum Supply Voltage No. of Macro Cells Technology Used Screening Level No. of Inputs Architecture Nominal Supply Voltage (V) Packing Method Power Supplies (V) Package Style (Meter) Package Equivalence Code Sub-Category In-System Programmable Output Function Minimum Supply Voltage No. of Product Terms Pitch Of Terminal Maximum Operating Temperature Organization No. of Dedicated Inputs Minimum Operating Temperature Finishing Of Terminal Used Position Of Terminal JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Seated Height Width Qualification Additional Features JESD-609 Code Maximum Clock Frequency Maximum Time At Peak Reflow Temperature (s) No. of Outputs Peak Reflow Temperature (C) Length JTAG Boundary Scan Test No. of I/O Lines

GAL16V8-20HF2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

20 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

33.3 MHz

8

GAL16V8-30QF2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

30 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

22.2 MHz

8

GAL16V8-20QF2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

20 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

33.3 MHz

8

GAL16V8-30QD2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

30 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

22.2 MHz

8

GAL20V8-30QF2

STMicroelectronics

EE PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic

30 ns

No

CMOS

20

PAL-TYPE

5

5 V

In-Line

DIP24,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T24

No

e0

22.2 MHz

8

GAL16V8-30HF2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

30 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

22.2 MHz

8

GAL20V8-20HD2

STMicroelectronics

EE PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic

20 ns

No

CMOS

20

PAL-TYPE

5

5 V

In-Line

DIP24,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T24

No

e0

33.3 MHz

8

GAL16V8-30HZ2

STMicroelectronics

EE PLD

Military

No Lead

20

QCCN

Square

Ceramic

30 ns

Yes

CMOS

18

PAL-TYPE

5

5 V

Chip Carrier

LCC20,.35SQ

Programmable Logic Devices

Macrocell

64

1.27 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Quad

S-XQCC-N20

No

e0

22.2 MHz

8

GAL20V8-30QD2

STMicroelectronics

EE PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic

30 ns

No

CMOS

20

PAL-TYPE

5

5 V

In-Line

DIP24,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T24

No

e0

22.2 MHz

8

GAL16V8-30HD2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

30 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

22.2 MHz

8

GAL20V8-30QZ2

STMicroelectronics

EE PLD

Military

No Lead

28

QCCN

Square

Ceramic

30 ns

Yes

CMOS

20

PAL-TYPE

5

5 V

Chip Carrier

LCC28,.45SQ

Programmable Logic Devices

Macrocell

64

1.27 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Quad

S-XQCC-N28

No

e0

22.2 MHz

8

GAL16V8-20HD2

STMicroelectronics

EE PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

20 ns

No

CMOS

18

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Macrocell

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Dual

R-XDIP-T20

No

e0

33.3 MHz

8

5962-9176008M3X

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

7.5 ns

Yes

5.25 V

BICMOS

MIL-STD-883 Class B

5

Chip Carrier

Macrocell

4.75 V

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Tin Lead

Quad

S-CQCC-N28

No

e0

71 MHz

10

5962-9176008MLX

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

9 ns

No

5.5 V

BICMOS

MIL-STD-883

5

In-Line

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Dual

R-GDIP-T24

5.08 mm

7.62 mm

No

71 MHz

10

5962-8984104LA

NXP Semiconductors

Flash PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

25 ns

No

5.5 V

CMOS

5

In-Line

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T24

5.08 mm

7.62 mm

No

10 Macrocells; 1 External Clock; Shared Input/Clock; Variable Product Terms

e0

30.3 MHz

31.877 mm

10

82S105/BYA

NXP Semiconductors

OT PLD

Military

Flat

28

DFP

Rectangular

Ceramic, Metal-Sealed Cofired

40 ns

Yes

5.5 V

TTL

5

Flatpack

Registered

4.5 V

125 °C (257 °F)

15 Dedicated Inputs, 0 I/O

15

-55 °C (-67 °F)

Dual

R-CDFP-F28

No

10.5 MHz

0

5962-8984104LX

NXP Semiconductors

Flash PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

No

5.5 V

CMOS

5

In-Line

Macrocell

4.5 V

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Dual

R-GDIP-T24

No

10

5962-9176008MLA

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

7.5 ns

No

5.25 V

BICMOS

MIL-STD-883 Class B

5

In-Line

Macrocell

4.75 V

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T24

No

e0

71 MHz

10

PLUS16L8/BRA

NXP Semiconductors

OT PLD

Military

Through-Hole

20

Rectangular

Ceramic, Metal-Sealed Cofired

12 ns

No

5.5 V

TTL

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

10 Dedicated Inputs, 6 I/O

10

-55 °C (-67 °F)

Dual

R-CDIP-T20

No

Security Fuse

6

5962-8768201M2A

NXP Semiconductors

OT PLD

Military

No Lead

20

QCCN

Square

Ceramic, Metal-Sealed Cofired

45 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 10 I/O

8

-55 °C (-67 °F)

Tin Lead

Quad

S-CQCC-N20

No

e0

10

S82S153F/883B

NXP Semiconductors

OT PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

45 ns

No

5.5 V

TTL

18

PLA-TYPE

5

In-Line

DIP20,.3

No

4.5 V

42

125 °C (257 °F)

0 Dedicated Inputs, 10 I/O

0

-55 °C (-67 °F)

Tin Lead

Dual

R-CDIP-T20

e0

10

No

10

M38510/50201BXA

NXP Semiconductors

OT PLD

Military

Through-Hole

28

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

No

5.5 V

Bipolar

MIL-M-38510 Class B

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-CDIP-T28

No

0

ABT22V10B/BLA

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

9 ns

No

5.5 V

BICMOS

5

In-Line

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Dual

R-GDIP-T24

5.08 mm

7.62 mm

No

71 MHz

10

5962-8670901YX

NXP Semiconductors

OT PLD

Military

Flat

28

DFP

Rectangular

Ceramic, Glass-Sealed

35 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Flatpack

Registered

4.5 V

125 °C (257 °F)

15 Dedicated Inputs, 0 I/O

15

-55 °C (-67 °F)

Dual

R-GDFP-F28

No

0

82S100/BYA-T

NXP Semiconductors

OT PLD

Military

Flat

28

DFP

Rectangular

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Flatpack

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-CDFP-F28

No

0

5962-8670901XA

NXP Semiconductors

OT PLD

Military

Through-Hole

28

DIP

Rectangular

Ceramic, Glass-Sealed

35 ns

No

5.5 V

Bipolar

MIL-STD-883

5

In-Line

Registered

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T28

No

e0

0

5962-8768201RX

NXP Semiconductors

OT PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

45 ns

No

5.5 V

Bipolar

MIL-STD-883

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 10 I/O

8

-55 °C (-67 °F)

Dual

R-CDIP-T20

No

10

82S101/B3A-T

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Quad

S-CQCC-N28

No

0

82S100/B3A-T

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Quad

S-CQCC-N28

No

0

82S153A/B2A

NXP Semiconductors

OT PLD

Military

No Lead

20

QCCN

Square

Ceramic, Metal-Sealed Cofired

45 ns

Yes

5.5 V

TTL

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 10 I/O

8

-55 °C (-67 °F)

Quad

S-CQCC-N20

No

10

82S101/BYA-T

NXP Semiconductors

OT PLD

Military

Flat

28

DFP

Rectangular

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Flatpack

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-CDFP-F28

No

0

82S153A/BRA

NXP Semiconductors

OT PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic, Glass-Sealed

45 ns

No

5.5 V

TTL

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 10 I/O

8

-55 °C (-67 °F)

Dual

R-GDIP-T20

No

10

ABT22V10A/BLA

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

10 ns

No

5.5 V

BICMOS

5

In-Line

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Dual

R-GDIP-T24

5.08 mm

7.62 mm

No

55 MHz

10

5962-8850701LX

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

40 ns

No

5.5 V

Bipolar

MIL-STD-883

5

In-Line

Mixed

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 12 I/O

8

-55 °C (-67 °F)

Dual

R-GDIP-T24

No

20 MHz

12

5962-86709013C

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

35 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Chip Carrier

Registered

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Tin Lead

Quad

S-CQCC-N28

No

e0

0

M38510/50202BXA

NXP Semiconductors

OT PLD

Military

Through-Hole

28

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

No

5.5 V

Bipolar

MIL-M-38510 Class B

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-CDIP-T28

No

0

PLC18V8Z/BRA

NXP Semiconductors

UV PLD

Military

Through-Hole

20

WDIP

Rectangular

Ceramic, Glass-Sealed

30 ns

No

5.5 V

CMOS

5

In-Line, Window

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

8 Dedicated Inputs, 8 I/O

8

-55 °C (-67 °F)

Dual

R-GDIP-T20

5.08 mm

7.62 mm

No

25 MHz

8

M38510/50201BXX

NXP Semiconductors

OT PLD

Military

Through-Hole

28

DIP

Rectangular

Ceramic, Metal-Sealed Cofired

No

5.5 V

Bipolar

MIL-M-38510 Class B

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-CDIP-T28

No

0

82S100/B3A

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Quad

S-CQCC-N28

No

0

5962-8670901YA

NXP Semiconductors

OT PLD

Military

Flat

28

DFP

Rectangular

Ceramic, Glass-Sealed

35 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Flatpack

Registered

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Tin Lead

Dual

R-GDFP-F28

No

e0

0

82S105/B3A

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

40 ns

Yes

5.5 V

TTL

5

Chip Carrier

Registered

4.5 V

125 °C (257 °F)

15 Dedicated Inputs, 0 I/O

15

-55 °C (-67 °F)

Quad

S-CQCC-N28

No

10.5 MHz

0

82S101/BXA

NXP Semiconductors

OT PLD

Military

Through-Hole

28

DIP

Rectangular

Ceramic, Glass-Sealed

80 ns

No

5.5 V

TTL

5

In-Line

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Dual

R-GDIP-T28

No

0

5962-9201201MLA

NXP Semiconductors

OT PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

35 ns

No

5.5 V

Bipolar

MIL-STD-883

5

In-Line

Registered

4.5 V

125 °C (257 °F)

12 Dedicated Inputs, 0 I/O

12

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T24

No

e0

10.5 MHz

0

PLUS16R8/BRA

NXP Semiconductors

OT PLD

Military

Through-Hole

20

DIP

Rectangular

Ceramic

No

TTL

38535Q/M;38534H;883B

8

PAL-TYPE

5

5 V

In-Line

DIP20,.3

Programmable Logic Devices

Registered

64

2.54 mm

125 °C (257 °F)

-55 °C (-67 °F)

Tin/Lead

Dual

R-XDIP-T20

No

e0

50 MHz

8

5962-8984105LA

NXP Semiconductors

EE PLD

Military

Through-Hole

24

DIP

Rectangular

Ceramic, Glass-Sealed

15 ns

No

5.5 V

CMOS

MIL-STD-883

5

In-Line

Macrocell

4.5 V

2.54 mm

125 °C (257 °F)

11 Dedicated Inputs, 10 I/O

11

-55 °C (-67 °F)

Tin Lead

Dual

R-GDIP-T24

5.08 mm

7.62 mm

No

e0

42 MHz

10

5962-8768201M2X

NXP Semiconductors

OT PLD

Military

No Lead

20

QCCN

Square

Ceramic, Metal-Sealed Cofired

45 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

8 Dedicated Inputs, 10 I/O

8

-55 °C (-67 °F)

Quad

S-CQCC-N20

No

10

82S101/B3A

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

80 ns

Yes

5.5 V

TTL

5

Chip Carrier

Combinatorial

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Quad

S-CQCC-N28

No

0

5962-86709013A

NXP Semiconductors

OT PLD

Military

No Lead

28

QCCN

Square

Ceramic, Metal-Sealed Cofired

35 ns

Yes

5.5 V

Bipolar

MIL-STD-883

5

Chip Carrier

Registered

4.5 V

125 °C (257 °F)

16 Dedicated Inputs, 0 I/O

16

-55 °C (-67 °F)

Tin Lead

Quad

S-CQCC-N28

No

e0

0

Programmable Logic Devices (PLD)

Programmable Logic Devices (PLDs) are digital circuits that are designed to be programmed by the user to perform specific logic functions. They consist of an array of configurable logic blocks (CLBs) that can be programmed to perform any digital function, as well as programmable interconnects that allow these blocks to be connected in any way the designer wishes. This makes PLDs highly versatile and customizable, and they are often used in applications where a high degree of flexibility and performance is required.

PLDs are programmed using specialized software tools that allow the designer to specify the logic functions and interconnects that are required for a particular application. This process is known as synthesis and involves translating the high-level design into a format that can be implemented on the PLD hardware. The resulting configuration data is then loaded onto the PLD, allowing it to perform the desired logic functions.

PLDs are used in a wide range of applications, including digital signal processing, computer networking, and high-performance computing. They offer a number of advantages over traditional fixed-function digital circuits, including the ability to be reprogrammed in the field, lower development costs, and faster time-to-market. However, they also have some disadvantages, including higher power consumption and lower performance compared to custom-designed digital circuits.