NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MD7IC2012GNR1,528	NXP Semiconductors	NARROW BAND HIGH POWER
MW7IC2220NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
935373852528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	Tin (Sn)		e3	3200 MHz	4000 MHz
RF5110G	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	13 dBm	10		COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-40 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 800 TO 950 MHZ	e3	880 MHz	915 MHz
CMPA2060035F1	Wolfspeed	NARROW BAND HIGH POWER
MHT2012NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	TIN		e3	2400 MHz	2500 MHz
CMPA2735075F1	Wolfspeed	NARROW BAND HIGH POWER
RA30H1317M	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	175 MHz
MW7IC930NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
M57710-A	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	2.8		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				156 MHz	160 MHz
MW7IC2750NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						30 dBm	10		COMPONENT			50 ohm			24 dB		Matte Tin (Sn)		e3	2500 MHz	2700 MHz
RA30H1317M1-501	Mitsubishi Electric	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		100 Cel		-30 Cel				135 MHz	175 MHz
QPA1027	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAN	1	29 dBm	3		COMPONENT		LCC28,.24SQ,25	50 ohm		85 Cel	31 dB	-40 Cel				2800 MHz	3500 MHz
RA30H1317M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	175 MHz
RA07H4047M-501	Mitsubishi Electric	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	4	PLASTIC/EPOXY	HYBRID	1	14.77 dBm	4		MODULE	12.5	MODULE,4LEAD,.74	50 ohm		90 Cel	25.22 dB	-30 Cel				400 MHz	470 MHz
RA35H1516M	Mitsubishi Electric	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		110 Cel		-30 Cel				154 MHz	162 MHz
RA35H1516M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				154 MHz	162 MHz
M57706L	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	4		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	145 MHz
FMM5059VF	Sumitomo Electric Industries	NARROW BAND HIGH POWER						26 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel		HIGH RELIABILITY		13750 MHz	14500 MHz
RA07H4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	14.77 dBm	4		MODULE	3.5,12.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RA07N4047M-501	Mitsubishi Electric	NARROW BAND HIGH POWER
RA60H3847M1A-501	Mitsubishi Electric	NARROW BAND HIGH POWER
CMPA1C1D080F	Wolfspeed	NARROW BAND HIGH POWER
QPA4501SR	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	36	PLASTIC/EPOXY	GAN	1	12 dBm	10		COMPONENT		LCC36,.24X.4,27	50 ohm			26 dB					4400 MHz	5000 MHz
MW7IC2040NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	25 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		TIN		e3	1805 MHz	1990 MHz
QPA9426TR13	Qorvo	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY		1	10 dBm	10	900 mA	COMPONENT	4.5	SOLCC14,.28,42	50 ohm		85 Cel	30.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	2700 MHz
RA07N4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	14.77 dBm	4		MODULE	3.5,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RA18H1213G-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	24.77 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel	23 dB	-30 Cel				1240 MHz	1300 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
M67799HA	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		14.77 dBm	20		MODULE	3.5,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				450 MHz	470 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MW7IC2725NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						22 dBm	10		COMPONENT			50 ohm			25.5 dB		Matte Tin (Sn)		e3	2300 MHz	2700 MHz
PTMA180402M-V1-R500	Wolfspeed	NARROW BAND HIGH POWER
QPA9421TR13	Qorvo	NARROW BAND HIGH POWER
RA07M4047M	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	18.45 dBm	4		MODULE	3.5,7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				400 MHz	470 MHz
RA07M4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	18.45 dBm	4		MODULE	3.5,7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RA20H8994M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				896 MHz	941 MHz
A5M36TG140T2	NXP Semiconductors	NARROW BAND HIGH POWER
MD7IC2050NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						28 dBm	5		MODULE			50 ohm			28.5 dB		Matte Tin (Sn)	USABLE AT 1750 TO 2050 MHZ	e3	1880 MHz	2100 MHz
MD7IC2755NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		TIN		e3	2500 MHz	2700 MHz
MW7IC2725GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MW7IC2725NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
SKY66298-11	Skyworks Solutions	NARROW BAND HIGH POWER
A2I20H080NR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
S-AV35	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	13 dBm	3		COMPONENT	12.5	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-30 Cel				154 MHz	162 MHz
SKY66394-11	Skyworks Solutions	NARROW BAND HIGH POWER
MHW812A3	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY			23 dBm	30		COMPONENT	13	MOT CASE 301H-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				890 MHz	915 MHz
MHW916	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		19 dBm	2		COMPONENT	12.5	MOT CASE 301AB-01	50 ohm	RF/Microwave Amplifiers	85 Cel	26.5 dB	-5 Cel				925 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.