NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY1816S	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID		1	20.79 dBm	2		MODULE	5,26	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	29 dB	-10 Cel				1805 MHz	1880 MHz
BGY119D	NXP Semiconductors	NARROW BAND HIGH POWER																					898 MHz	928 MHz
BGY145C	NXP Semiconductors	NARROW BAND HIGH POWER							26.53 dBm	2		MODULE			50 ohm		90 Cel						174 MHz	200 MHz
AFSC5G37E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	29	LCC26,.24X.4,20	50 ohm		125 Cel	25.4 dB		NICKEL PALLADIUM GOLD		e4	3600 MHz	3800 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
BGY46B	NXP Semiconductors	NARROW BAND HIGH POWER							19.5 dBm	2		MODULE			50 ohm		90 Cel						430 MHz	470 MHz
MW4IC2020NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
A2I09VD030GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
BGY113B	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		90 Cel	38.5 dB	-30 Cel				430 MHz	470 MHz
AFIC10275NR5	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
MRFIC1859R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		2	12 dBm	6		COMPONENT	3.6	TQFP32,.28SQ	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
MWE6IC9080GNR1	NXP Semiconductors	NARROW BAND HIGH POWER							20.5 dBm	10		COMPONENT			50 ohm		150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
BGY133	NXP Semiconductors	NARROW BAND HIGH POWER							23 dBm	3		COMPONENT			50 ohm		90 Cel	22.6 dB	-20 Cel				80 MHz	108 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
BGY143	NXP Semiconductors	NARROW BAND HIGH POWER							24.8 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				146 MHz	174 MHz
BGY152A	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		100 Cel	38.5 dB	-30 Cel				400 MHz	470 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
A2I20D020NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGY145A	NXP Semiconductors	NARROW BAND HIGH POWER							24.77 dBm	2		MODULE			50 ohm		90 Cel						68 MHz	88 MHz
MWE6IC9100GNR1	NXP Semiconductors	NARROW BAND HIGH POWER								10		COMPONENT			50 ohm			31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
BGY46A	NXP Semiconductors	NARROW BAND HIGH POWER							19.5 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				400 MHz	440 MHz
CGY2013GBE	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
934064692112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	26.5 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
MW5IC2030GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
BGF844,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
CGY2011G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
BGY95B	NXP Semiconductors	NARROW BAND HIGH POWER							16 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				890 MHz	915 MHz
BGY925/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
MW4IC2230GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	2110 MHz	2170 MHz
A3I20X050GNR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
BGF1801-10	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1		2.2	280 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-20 Cel				1805 MHz	1880 MHz
BGY116D	NXP Semiconductors	NARROW BAND HIGH POWER							10 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				800 MHz	870 MHz
AFIC10275GN	NXP Semiconductors	NARROW BAND HIGH POWER
BGY916/5	NXP Semiconductors	NARROW BAND HIGH POWER							19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
CGY2013GBE-T	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BLM6G22-30G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
CGY2021G-T	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm			COMPONENT					85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
A2I20H080GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGY925	NXP Semiconductors	NARROW BAND HIGH POWER							19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
A2I08H040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
MW4IC2230MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	2110 MHz	2170 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.