NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHW1910-1	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		21 dBm	2		COMPONENT	5,26	MOT CASE 301AW-02	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
MHL21336N	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
MMRF2004NBR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
CGY1049	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
MHW1815	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		17 dBm	3		COMPONENT	5,26	MOT CASE 301AK-01	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-30 Cel				1805 MHz	1880 MHz
MHL19926N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	17 dBm	1.5	1050 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.9 dB	-20 Cel				1930 MHz	1990 MHz
MHL18926	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	18 dBm	1.5	1150 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.6 dB	-20 Cel				1805 MHz	1880 MHz
MHW10188AN	NXP Semiconductors	NARROW BAND HIGH POWER									COMPONENT			75 ohm		100 Cel	20 dB	-20 Cel				40 MHz	1000 MHz
MHV5IC1810NR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	26.5 dB			IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ		1805 MHz	1990 MHz
CGY1043	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
CGD987HC	NXP Semiconductors	NARROW BAND HIGH POWER
CGY1032	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	32 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
MD7IC2012GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHPA18010N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1805 MHz	1880 MHz
MD8IC970NR1	NXP Semiconductors	NARROW BAND HIGH POWER						30 dBm	10		COMPONENT			50 ohm		150 Cel	31.5 dB		TIN		e3	850 MHz	940 MHz
MHVIC910HR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10	150 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
CGD985LC	NXP Semiconductors	NARROW BAND HIGH POWER
MD7IC2050NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		2	28 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		28.5 dB		TIN	USABLE AT 1750 TO 2050 MHZ	e3	1880 MHz	2100 MHz
CGD987HCI	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	26 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
MHPA18010	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1800 MHz	1900 MHz
MHW1304L	NXP Semiconductors	NARROW BAND HIGH POWER						21.25 dBm			MODULE			75 ohm		100 Cel	29.2 dB	-20 Cel				5 MHz	50 MHz
MD7IC2012NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MHVIC910HNR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MHL19338	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		10 dBm	1.5	525 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				1900 MHz	2000 MHz
MHL9318	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		20 dBm	1.5	560 mA	COMPONENT	28	MOT CASE 301-01	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-20 Cel				860 MHz	900 MHz
MHL19936	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	16 dBm	1.5	1450 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-20 Cel				1900 MHz	2000 MHz
MW7IC2240N	NXP Semiconductors	NARROW BAND HIGH POWER							5		COMPONENT			50 ohm			15 dB					2110 MHz	2170 MHz
935313345528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935316155528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935323765528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
935313109528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935320823528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
MW7IC3825NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	45 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)		e3	3400 MHz	3600 MHz
MW7IC18100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							5		COMPONENT			50 ohm			27 dB		Matte Tin (Sn)		e3	1805 MHz	2050 MHz
MW7IC930NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
MW7IC2020NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	1	37 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		31 dB		TIN		e3	1805 MHz	2170 MHz
935316306528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935320315528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
MW7IC18100GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1		5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		27 dB		Matte Tin (Sn)		e3	1805 MHz	2050 MHz
MW7IC2040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER						25 dBm	5		COMPONENT			50 ohm			29.5 dB		TIN		e3	1805 MHz	1990 MHz
MW7IC2240GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5	420 mA	COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB		TIN		e3	2000 MHz	2200 MHz
MW7IC2040NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	25 dBm	5		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		Matte Tin (Sn)		e3	1805 MHz	1990 MHz
935313237528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935343962528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	Tin (Sn)		e3	2400 MHz	3100 MHz
935321448528	NXP Semiconductors	NARROW BAND HIGH POWER
935316301528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
935316286528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	Tin (Sn)		e3	1400 MHz	2200 MHz
MHPA21010N	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	23.7 dB	-20 Cel				2110 MHz	2170 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.