NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
934056740127	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY47A	NXP Semiconductors	NARROW BAND HIGH POWER						19.5 dBm	2		MODULE			50 ohm		90 Cel						400 MHz	470 MHz
BGY208	NXP Semiconductors	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel	30.7 dB	-30 Cel				880 MHz	915 MHz
MWE6IC9100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		10		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
AFIC10275GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
CGY2013G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm		3 mA	COMPONENT	3.3	QFP48,.35SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGR69	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	34.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY916/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
BGY241	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID	1	10 dBm	3		COMPONENT	3.5	MODULE,4LEAD,.67	50 ohm	RF/Microwave Amplifiers	100 Cel	35.2 dB	-30 Cel				880 MHz	915 MHz
BGY925/5	NXP Semiconductors	NARROW BAND HIGH POWER						19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
MWE6IC9100NR1	NXP Semiconductors	NARROW BAND HIGH POWER							10		COMPONENT			50 ohm			31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
BYG118B	NXP Semiconductors	NARROW BAND HIGH POWER																				872 MHz	905 MHz
CGY2011G-T	NXP Semiconductors	NARROW BAND HIGH POWER						1.5 dBm			COMPONENT					85 Cel		-20 Cel				880 MHz	915 MHz
934059505112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	21 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
BGY96B	NXP Semiconductors	NARROW BAND HIGH POWER						17 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				890 MHz	915 MHz
BGF802-20,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
MW5IC2030MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm			COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Tin/Lead (Sn/Pb)		e0	1930 MHz	1990 MHz
CGY2010G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
BGY201	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		COMPONENT			50 ohm		90 Cel	41.5 dB	-30 Cel				890 MHz	915 MHz
MDE6IC7120GNR1	NXP Semiconductors	NARROW BAND HIGH POWER						30 dBm	10		COMPONENT			50 ohm			32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
CGY2010G-T	NXP Semiconductors	NARROW BAND HIGH POWER						1.5 dBm			COMPONENT					85 Cel		-20 Cel				880 MHz	915 MHz
BGY35	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	1.5		COMPONENT			50 ohm		90 Cel						132 MHz	156 MHz
MW6IC2015GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
BGY113F	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				430 MHz	470 MHz
BGY209	NXP Semiconductors	NARROW BAND HIGH POWER						16.02 dBm	3		COMPONENT			50 ohm		100 Cel	21.8 dB	-30 Cel				880 MHz	915 MHz
MDE6IC7120NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers		32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
BGY113E	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				400 MHz	440 MHz
BGY112C	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		MODULE			50 ohm		90 Cel						146 MHz	174 MHz
BGY206	NXP Semiconductors	NARROW BAND HIGH POWER						11.14 dBm	2.5		MODULE			50 ohm		100 Cel	30 dB	-30 Cel				880 MHz	915 MHz
MW4IC2230NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm		1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
BGY1916	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	3	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
MRFIC1869	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		2				COMPONENT	3.6	LCC32,.2SQ,20		RF/Microwave Amplifiers	100 Cel		-35 Cel
MMM5062	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY		1	10 dBm	10		COMPONENT	1.8,2.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				824 MHz	849 MHz
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
BGY135	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				132 MHz	156 MHz
BGY204	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2.5		MODULE			50 ohm		100 Cel	35 dB	-30 Cel				880 MHz	915 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID	2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BGY113C	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2					50 ohm		90 Cel	38.5 dB	-30 Cel				470 MHz	520 MHz
A3I20X050NR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
A2I20D020GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
MMM5063	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS	1	11 dBm	10		COMPONENT	1.8,32.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				880 MHz	915 MHz
BGY916	NXP Semiconductors	NARROW BAND HIGH POWER						19.03 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
A2I08H040NR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
CGY2020G-T	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm			COMPONENT					85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
BLS6G2933P-200	NXP Semiconductors	NARROW BAND HIGH POWER									COMPONENT			50 ohm			10 dB					2900 MHz	3300 MHz
AFIC10275N	NXP Semiconductors	NARROW BAND HIGH POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.