NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

PTMA210452ELV1

Infineon Technologies

NARROW BAND HIGH POWER

CERAMIC

1

28

FLNG,.59"H.SPACE

RF/Microwave Amplifiers

PTMA180402FLV1

Infineon Technologies

NARROW BAND HIGH POWER

8

CERAMIC

1

28

MODULE,8LEAD,.6

RF/Microwave Amplifiers

PTMA210452ELV1R250

Infineon Technologies

NARROW BAND HIGH POWER

PTMA180402MV1

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

10

COMPONENT

28

SOP20,.56

50 ohm

RF/Microwave Amplifiers

29.5 dB

1800 MHz

2100 MHz

PTMA210452EL

Infineon Technologies

NARROW BAND HIGH POWER

CERAMIC

1

25 dBm

10

MODULE

28

FLNG,.59"H.SPACE

50 ohm

RF/Microwave Amplifiers

26.5 dB

Gold (Au)

e4

1900 MHz

2200 MHz

PTMA210452FLV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER

25 dBm

10

MODULE

50 ohm

26.5 dB

1900 MHz

2200 MHz

PTMA180152M

Infineon Technologies

NARROW BAND HIGH POWER

42 dBm

3

COMPONENT

50 ohm

30 dB

1800 MHz

2000 MHz

PTMA180402ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER

CGY94

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

GAAS

2

COMPONENT

3/5

SOP14(UNSPEC)

50 ohm

RF/Microwave Amplifiers

27 dB

Tin/Lead (Sn/Pb)

e0

PTMC210124MDV1R5XUMA1

Infineon Technologies

NARROW BAND HIGH POWER

CGY96E6327

Infineon Technologies

NARROW BAND HIGH POWER

1.7

COMPONENT

50 ohm

PTMA180402FLV1R50

Infineon Technologies

NARROW BAND HIGH POWER

PTH31002

Infineon Technologies

NARROW BAND HIGH POWER

1.5

MODULE

50 ohm

12 dB

1930 MHz

1990 MHz

PTMA210152MV1R500

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

15 dBm

10

COMPONENT

28

SOP20,.56

50 ohm

27.5 dB

1800 MHz

2200 MHz

PTMA180402FL

Infineon Technologies

NARROW BAND HIGH POWER

10

MODULE

50 ohm

28.5 dB

Gold (Au)

e4

1800 MHz

2000 MHz

PTMA180402EL

Infineon Technologies

NARROW BAND HIGH POWER

10

MODULE

50 ohm

28.5 dB

Gold (Au)

e4

1800 MHz

2000 MHz

PTMA210452FL-45W

Infineon Technologies

NARROW BAND HIGH POWER

PTMA210152M-20W

Infineon Technologies

NARROW BAND HIGH POWER

CGY184E6327

Infineon Technologies

NARROW BAND HIGH POWER

1.8

COMPONENT

50 ohm

40 dB

CGY184

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1.8

COMPONENT

3.5

SOP16,.35,32

50 ohm

RF/Microwave Amplifiers

85 Cel

40 dB

Tin/Lead (Sn/Pb)

e0

S-AU83AH

Toshiba

NARROW BAND HIGH POWER

20 dBm

3

MODULE

50 ohm

100 Cel

28 dB

-30 Cel

450 MHz

520 MHz

S-AU68L

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

17 dBm

5

COMPONENT

4,9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

400 MHz

420 MHz

S-AU27AH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

15

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

490 MHz

512 MHz

S-AU35AL

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

400 MHz

430 MHz

S-AU82L

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

400 MHz

470 MHz

S-AV36

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

32 dB

-30 Cel

134 MHz

174 MHz

S-AU50M

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.76 dBm

3

COMPONENT

9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

21.4 dB

-30 Cel

430 MHz

480 MHz

S-AU9

Toshiba

NARROW BAND HIGH POWER

26 dBm

2

50 ohm

100 Cel

18.4 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

905 MHz

915 MHz

S-AV23AL

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

135 MHz

150 MHz

S-AV38

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

17 dBm

2.5

COMPONENT

7.2

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

260 MHz

266 MHz

S-AU70

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

20

MODULE

13

FLNG,1.45"H.SPACE

50 ohm

RF/Microwave Amplifiers

110 Cel

-30 Cel

824 MHz

849 MHz

S-AV7

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

20

MODULE

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

144 MHz

148 MHz

S-AU82H

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

450 MHz

520 MHz

S-AU27AM

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

450 MHz

490 MHz

S-AV23AVH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

160 MHz

174 MHz

S9751A

Toshiba

NARROW BAND HIGH POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1900 mA

9

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

S-AU80

Toshiba

NARROW BAND HIGH POWER

5

PLASTIC/EPOXY

HYBRID

3.6

MODULE,5LEAD,.53

RF/Microwave Amplifiers

S-AU82AL

Toshiba

NARROW BAND HIGH POWER

20 dBm

3

MODULE

50 ohm

100 Cel

30.7 dB

-30 Cel

400 MHz

470 MHz

S-AV8

Toshiba

NARROW BAND HIGH POWER

24.77 dBm

2

50 ohm

100 Cel

19.2 dB

-30 Cel

430 MHz

450 MHz

S-AV32

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

134 MHz

174 MHz

S-AV28

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

17 dBm

20

MODULE

9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

144 MHz

148 MHz

S-AU35ASH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

490 MHz

512 MHz

S-AU3

Toshiba

NARROW BAND HIGH POWER

24.7 dBm

2

50 ohm

100 Cel

18.7 dB

-30 Cel

430 MHz

450 MHz

TGM9398-25

Toshiba

NARROW BAND HIGH POWER

PANEL MOUNT

6

GAN

1

27 dBm

MODULE

50 ohm

20 dB

S-AU66

Toshiba

NARROW BAND HIGH POWER

7.7 dBm

3

50 ohm

100 Cel

34.7 dB

-30 Cel

824 MHz

849 MHz

S-AU4

Toshiba

NARROW BAND HIGH POWER

24.7 dBm

2

50 ohm

100 Cel

19.2 dB

-30 Cel

430 MHz

450 MHz

S-AU39

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

13.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

889 MHz

915 MHz

S-AV17

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

2

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

21.7 dB

-30 Cel

144 MHz

148 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.