Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
NARROW BAND HIGH POWER |
CERAMIC |
1 |
28 |
FLNG,.59"H.SPACE |
RF/Microwave Amplifiers |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
8 |
CERAMIC |
1 |
28 |
MODULE,8LEAD,.6 |
RF/Microwave Amplifiers |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
10 |
COMPONENT |
28 |
SOP20,.56 |
50 ohm |
RF/Microwave Amplifiers |
29.5 dB |
1800 MHz |
2100 MHz |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
CERAMIC |
1 |
25 dBm |
10 |
MODULE |
28 |
FLNG,.59"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
26.5 dB |
Gold (Au) |
e4 |
1900 MHz |
2200 MHz |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
25 dBm |
10 |
MODULE |
50 ohm |
26.5 dB |
1900 MHz |
2200 MHz |
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Infineon Technologies |
NARROW BAND HIGH POWER |
42 dBm |
3 |
COMPONENT |
50 ohm |
30 dB |
1800 MHz |
2000 MHz |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
2 |
COMPONENT |
3/5 |
SOP14(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
27 dB |
Tin/Lead (Sn/Pb) |
e0 |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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Infineon Technologies |
NARROW BAND HIGH POWER |
1.7 |
COMPONENT |
50 ohm |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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Infineon Technologies |
NARROW BAND HIGH POWER |
1.5 |
MODULE |
50 ohm |
12 dB |
1930 MHz |
1990 MHz |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
15 dBm |
10 |
COMPONENT |
28 |
SOP20,.56 |
50 ohm |
27.5 dB |
1800 MHz |
2200 MHz |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
10 |
MODULE |
50 ohm |
28.5 dB |
Gold (Au) |
e4 |
1800 MHz |
2000 MHz |
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|
Infineon Technologies |
NARROW BAND HIGH POWER |
10 |
MODULE |
50 ohm |
28.5 dB |
Gold (Au) |
e4 |
1800 MHz |
2000 MHz |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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Infineon Technologies |
NARROW BAND HIGH POWER |
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Infineon Technologies |
NARROW BAND HIGH POWER |
1.8 |
COMPONENT |
50 ohm |
40 dB |
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Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1.8 |
COMPONENT |
3.5 |
SOP16,.35,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
40 dB |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
NARROW BAND HIGH POWER |
20 dBm |
3 |
MODULE |
50 ohm |
100 Cel |
28 dB |
-30 Cel |
450 MHz |
520 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
5 |
COMPONENT |
4,9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
400 MHz |
420 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
15 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
490 MHz |
512 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
400 MHz |
430 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
400 MHz |
470 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
32 dB |
-30 Cel |
134 MHz |
174 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.76 dBm |
3 |
COMPONENT |
9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.4 dB |
-30 Cel |
430 MHz |
480 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
26 dBm |
2 |
50 ohm |
100 Cel |
18.4 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
905 MHz |
915 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
135 MHz |
150 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
17 dBm |
2.5 |
COMPONENT |
7.2 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
260 MHz |
266 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
20 |
MODULE |
13 |
FLNG,1.45"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
824 MHz |
849 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
20 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
450 MHz |
520 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
450 MHz |
490 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
160 MHz |
174 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1900 mA |
9 |
FL6,.4,100 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
5 |
PLASTIC/EPOXY |
HYBRID |
3.6 |
MODULE,5LEAD,.53 |
RF/Microwave Amplifiers |
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Toshiba |
NARROW BAND HIGH POWER |
20 dBm |
3 |
MODULE |
50 ohm |
100 Cel |
30.7 dB |
-30 Cel |
400 MHz |
470 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
24.77 dBm |
2 |
50 ohm |
100 Cel |
19.2 dB |
-30 Cel |
430 MHz |
450 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
134 MHz |
174 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
20 |
MODULE |
9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
490 MHz |
512 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
24.7 dBm |
2 |
50 ohm |
100 Cel |
18.7 dB |
-30 Cel |
430 MHz |
450 MHz |
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|
Toshiba |
NARROW BAND HIGH POWER |
PANEL MOUNT |
6 |
GAN |
1 |
27 dBm |
MODULE |
50 ohm |
20 dB |
|||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
7.7 dBm |
3 |
50 ohm |
100 Cel |
34.7 dB |
-30 Cel |
824 MHz |
849 MHz |
||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
24.7 dBm |
2 |
50 ohm |
100 Cel |
19.2 dB |
-30 Cel |
430 MHz |
450 MHz |
||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
13.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
889 MHz |
915 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.7 dB |
-30 Cel |
144 MHz |
148 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.