NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY113G	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				470 MHz	520 MHz
BGY32	NXP Semiconductors	NARROW BAND HIGH POWER						23 dBm	1.5		COMPONENT			50 ohm		90 Cel						68 MHz	88 MHz
BGY112B	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		MODULE			50 ohm		90 Cel						132 MHz	156 MHz
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGY2016,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20.79 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
MHW2821-1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-30 Cel				806 MHz	870 MHz
BGF1901-10	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1		2	280 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-20 Cel				1930 MHz	1990 MHz
MW5IC2030NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
BGY96A	NXP Semiconductors	NARROW BAND HIGH POWER						17 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				824 MHz	851 MHz
BGY43	NXP Semiconductors	NARROW BAND HIGH POWER						24.8 dBm	1.5		COMPONENT			50 ohm		90 Cel						148 MHz	174 MHz
BGY47B	NXP Semiconductors	NARROW BAND HIGH POWER						19.5 dBm	2					50 ohm		90 Cel	18 dB	-30 Cel				460 MHz	520 MHz
934042750112	NXP Semiconductors	NARROW BAND HIGH POWER						6.25 dBm			MODULE			75 ohm		100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
MW5IC2030GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm			COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB					1930 MHz	1990 MHz
BGY148B	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				430 MHz	488 MHz
BGY114C	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	2		COMPONENT			50 ohm		100 Cel	39 dB	-30 Cel				890 MHz	915 MHz
CGY2013G-T	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm			COMPONENT			50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGY205	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	CERAMIC	HYBRID		8.5 dBm	2		MODULE	6	SMSIP4,4GNDFLNG	50 ohm	RF/Microwave Amplifiers	100 Cel	32.5 dB	-30 Cel				880 MHz	915 MHz
CGY2013G/C1	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGY152	NXP Semiconductors	NARROW BAND HIGH POWER																				400 MHz	470 MHz
CGY2023G-T	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm			COMPONENT					85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
934056621135	NXP Semiconductors	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
MW4IC2020GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
934059506112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
934055279112	NXP Semiconductors	NARROW BAND HIGH POWER						6.25 dBm			MODULE			75 ohm		100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGY172	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		COMPONENT			50 ohm		90 Cel	37 dB	-30 Cel				800 MHz	870 MHz
934065143112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
BGY148BT/R	NXP Semiconductors	NARROW BAND HIGH POWER						13 dBm	3		COMPONENT			50 ohm		100 Cel	24.8 dB	-30 Cel				430 MHz	488 MHz
BGY145B	NXP Semiconductors	NARROW BAND HIGH POWER						26.53 dBm	2		MODULE			50 ohm		90 Cel						146 MHz	174 MHz
BGY68,112	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGY212A	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	1	10 dBm	8		COMPONENT	3.5	SOT-482C	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				1710 MHz	1785 MHz
MW6IC2240GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
MW6IC2240NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
BGF802-20	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY132	NXP Semiconductors	NARROW BAND HIGH POWER						23 dBm	3		COMPONENT			50 ohm		90 Cel	22.6 dB	-20 Cel				68 MHz	88 MHz
934065568112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	26 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
BGY114A	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	2		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				824 MHz	849 MHz
934056689127	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	2		COMPONENT			50 ohm		90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
MW6IC2420NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	23 dBm	3	370 mA	MODULE	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers		25.5 dB		Matte Tin (Sn)		e3
BGY136	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				146 MHz	174 MHz
A2I20H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
BGY2016	NXP Semiconductors	NARROW BAND HIGH POWER						20.79 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
MW4IC2020GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
MW6IC2015NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	3		COMPONENT			50 ohm		85 Cel	24 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
BGY1816	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC		1	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1805 MHz	1880 MHz
BGY114E	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				890 MHz	950 MHz
CGY2023G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm			COMPONENT	3.3	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
BGF944,127	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.