NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
DB-54003L-880	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL			10 ohm		85 Cel	12.1 dB	-20 Cel				800 MHz	880 MHz
DB-54008L-175	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL					85 Cel	16.2 dB	-20 Cel				135 MHz	175 MHz
STM961-15	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY							MODULE	26	MOT CASE 301H-01		RF/Microwave Amplifiers		28 dB					915 MHz	960 MHz
DB-55025-540	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL					85 Cel	12 dB	-20 Cel				460 MHz	540 MHz
DB-54008L-406	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL					85 Cel	13 dB	-20 Cel				400 MHz	420 MHz
DB-55015-165	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL					85 Cel	14.7 dB	-20 Cel				155 MHz	165 MHz
DB-54003L-470	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL					85 Cel	13 dB	-20 Cel				400 MHz	470 MHz
STM901-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY				14 dBm	3		MODULE	26	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				860 MHz	900 MHz
DB-55003L-512	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL			25 ohm		85 Cel	15.8 dB	-20 Cel				410 MHz	512 MHz
STM1645-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			13 dBm	2		COMPONENT	12,28	MOT CASE 700-04	50 ohm	RF/Microwave Amplifiers	70 Cel	34.8 dB	-35 Cel				1625 MHz	1665 MHz
DB-54003L-175	STMicroelectronics	NARROW BAND HIGH POWER								20		COAXIAL			50 ohm		85 Cel	15.6 dB	-20 Cel		SMA		135 MHz	175 MHz
TSTM872-20	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	2		MODULE	12.5	MOT CASE 301G-03	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				806 MHz	870 MHz
BGY95A	NXP Semiconductors	NARROW BAND HIGH POWER							16 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				824 MHz	851 MHz
BGY152B	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		100 Cel	38.5 dB	-30 Cel				450 MHz	512 MHz
934062616112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	27 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1003 MHz
BGY112A	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2		MODULE			50 ohm		90 Cel						68 MHz	88 MHz
BGY122D	NXP Semiconductors	NARROW BAND HIGH POWER																					898 MHz	928 MHz
BYG118A	NXP Semiconductors	NARROW BAND HIGH POWER																					824 MHz	849 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,40	50 ohm		125 Cel	27.1 dB					3700 MHz	4000 MHz
BGY240S	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID		1	7 dBm	3			3.5	MODULE,4LEAD,.51	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
MWE6IC9080NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20.5 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
BLM6G22-30	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
934065142112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	32 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
934055930127	NXP Semiconductors	NARROW BAND HIGH POWER							20.79 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
934057014127	NXP Semiconductors	NARROW BAND HIGH POWER							20 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
BGY200	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2					50 ohm		100 Cel	35.5 dB	-30 Cel				890 MHz	915 MHz
BGF944	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
BGY114D	NXP Semiconductors	NARROW BAND HIGH POWER							4.77 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				800 MHz	870 MHz
A2I20H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
BGY148BTRAY	NXP Semiconductors	NARROW BAND HIGH POWER							13 dBm	3		COMPONENT			50 ohm		100 Cel	24.8 dB	-30 Cel				430 MHz	488 MHz
BGY33	NXP Semiconductors	NARROW BAND HIGH POWER							23 dBm	1.5		COMPONENT			50 ohm		90 Cel						80 MHz	108 MHz
BGY36	NXP Semiconductors	NARROW BAND HIGH POWER							24.77 dBm	1.5		COMPONENT			50 ohm		90 Cel						148 MHz	174 MHz
BGF844	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY116E	NXP Semiconductors	NARROW BAND HIGH POWER							10 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				890 MHz	950 MHz
BGY68	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGY114B	NXP Semiconductors	NARROW BAND HIGH POWER							4.77 dBm	2		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				872 MHz	905 MHz
MW4IC2230GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
BGY288	NXP Semiconductors	NARROW BAND HIGH POWER							10 dBm	3		COMPONENT			50 ohm		100 Cel	31 dB	-30 Cel		HIGH RELIABILITY, IT CAN ALSO OPERATE AT 880 TO 915 MHZ, 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ		824 MHz	849 MHz
MRFIC0970R2	NXP Semiconductors	NARROW BAND HIGH POWER							15 dBm	10		COMPONENT			50 ohm		85 Cel		-40 Cel				880 MHz	915 MHz
BGY210	NXP Semiconductors	NARROW BAND HIGH POWER							9.03 dBm	3		COMPONENT			50 ohm		100 Cel	27 dB	-30 Cel				1710 MHz	1785 MHz
BGY240	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	3					50 ohm		100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
BGY203	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2		COMPONENT			50 ohm		100 Cel	35 dB	-30 Cel				880 MHz	915 MHz
MWE6IC9080NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20.5 dBm	10		MODULE	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		MATTE TIN		e3	865 MHz	960 MHz
BGY113A	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		90 Cel	38.5 dB	-30 Cel				400 MHz	440 MHz
MW4IC2020MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.