NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

7

PLASTIC/EPOXY

LDMOS

1

20 dBm

COMPONENT

2.15/28

50 ohm

150 Cel

28 dB

-40 Cel

TIN

e3

1800 MHz

2200 MHz

A3M38SL039IAAT2

NXP Semiconductors

NARROW BAND HIGH POWER

A3M34SL039IAAT2

NXP Semiconductors

NARROW BAND HIGH POWER

935441207528

NXP Semiconductors

NARROW BAND HIGH POWER

935444363528

NXP Semiconductors

NARROW BAND HIGH POWER

A5M39TG140T2

NXP Semiconductors

NARROW BAND HIGH POWER

A5M34TG140-TCT1

NXP Semiconductors

NARROW BAND HIGH POWER

A5M36TG140-TCT1

NXP Semiconductors

NARROW BAND HIGH POWER

MHL18336

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

26

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1800 MHz

1900 MHz

MHPA19010N

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

1

20 dBm

2

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

24.5 dB

-20 Cel

1930 MHz

1990 MHz

MHW1810-1

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

21 dBm

2

COMPONENT

5,26

MOT CASE 301AW-02

50 ohm

RF/Microwave Amplifiers

85 Cel

24 dB

-10 Cel

1805 MHz

1880 MHz

MHW1254L

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

135 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

24.3 dB

-20 Cel

5 MHz

50 MHz

935223940551

NXP Semiconductors

NARROW BAND HIGH POWER

2 dBm

50 ohm

85 Cel

35.5 dB

-20 Cel

LOW NOISE

880 MHz

915 MHz

MD7IC1812GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

TIN

e3

MHW1354LAN

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

34.5 dB

-20 Cel

5 MHz

65 MHz

MHL18926N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

18 dBm

1.5

1150 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

27.1 dB

-20 Cel

1805 MHz

1880 MHz

MHW1254LA

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

110 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

25 dB

-20 Cel

5 MHz

65 MHz

CGD985HC

NXP Semiconductors

NARROW BAND HIGH POWER

MD8IC970GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

30 dBm

10

COMPONENT

50 ohm

150 Cel

31.5 dB

TIN

e3

850 MHz

940 MHz

MHW1915

NXP Semiconductors

NARROW BAND HIGH POWER

THROUGH HOLE MOUNT

7

1

17 dBm

2

COMPONENT

5,26

50 ohm

85 Cel

29 dB

-30 Cel

1930 MHz

1990 MHz

MHPA19010

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

1

20 dBm

2

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

24.5 dB

-20 Cel

1930 MHz

1990 MHz

CGY1047

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

27 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

1003 MHz

MHW1304LA

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

30 dB

-20 Cel

5 MHz

65 MHz

MMRF2006NT1

NXP Semiconductors

NARROW BAND HIGH POWER

TIN

e3

MD7IC1812NR1

NXP Semiconductors

NARROW BAND HIGH POWER

TIN

e3

935223940557

NXP Semiconductors

NARROW BAND HIGH POWER

2 dBm

50 ohm

85 Cel

35.5 dB

-20 Cel

LOW NOISE

880 MHz

915 MHz

MD7IC2755GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MOS

2

30 dBm

10

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

23 dB

MATTE TIN

e3

2500 MHz

2700 MHz

MHL19338N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1900 MHz

2000 MHz

CGY1041

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

21 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

1003 MHz

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

LDMOS

1

25 dBm

10

COMPONENT

50

50 ohm

150 Cel

30.5 dB

-55 Cel

TIN

e3

1030 MHz

1090 MHz

MHL19338NN

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

28

MOT CASE 301AP-02

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1900 MHz

2000 MHz

MMRF2005NR1

NXP Semiconductors

NARROW BAND HIGH POWER

TIN

e3

935223940518

NXP Semiconductors

NARROW BAND HIGH POWER

2 dBm

50 ohm

85 Cel

35.5 dB

-20 Cel

LOW NOISE

880 MHz

915 MHz

MHW1254LN

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

24.3 dB

-20 Cel

5 MHz

50 MHz

CGD1046HI

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

26.5 dB

-20 Cel

GOLD

LOW NOISE

e4

40 MHz

1003 MHz

MHL19936N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

18 dBm

1.5

1450 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

27.5 dB

-20 Cel

1900 MHz

2000 MHz

CGD982HC

NXP Semiconductors

NARROW BAND HIGH POWER

MHPA21010

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

1

20 dBm

2

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

23.7 dB

-20 Cel

2110 MHz

2170 MHz

MMRF2005GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

TIN

e3

MHW1304LAN

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

30 dB

-20 Cel

5 MHz

65 MHz

MHW1254LAN

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

25 dB

-20 Cel

5 MHz

65 MHz

MHL18336N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

26

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29.5 dB

-20 Cel

1800 MHz

1900 MHz

MHW1224LA

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22.1 dB

-20 Cel

5 MHz

65 MHz

MHW1354LA

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

34.5 dB

-20 Cel

5 MHz

65 MHz

MHW1810-2

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

16 dBm

2

COMPONENT

5,26

MOT CASE 301AW-02

50 ohm

RF/Microwave Amplifiers

85 Cel

32 dB

-10 Cel

1805 MHz

1880 MHz

MHL9318N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

1.5

560 mA

COMPONENT

28

MOT CASE 301-01

50 ohm

RF/Microwave Amplifiers

100 Cel

16.25 dB

-20 Cel

860 MHz

900 MHz

MD7IC2050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

28 dBm

5

COMPONENT

50 ohm

28.5 dB

TIN

USABLE AT 1750 TO 2050 MHZ

e3

1880 MHz

2100 MHz

MHW10236N

NXP Semiconductors

NARROW BAND HIGH POWER

COMPONENT

75 ohm

100 Cel

23 dB

-20 Cel

40 MHz

1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.