Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
LDMOS |
1 |
20 dBm |
COMPONENT |
2.15/28 |
50 ohm |
150 Cel |
28 dB |
-40 Cel |
TIN |
e3 |
1800 MHz |
2200 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
26 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
1800 MHz |
1900 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
HYBRID |
1 |
20 dBm |
2 |
COMPONENT |
28 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
24.5 dB |
-20 Cel |
1930 MHz |
1990 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
HYBRID |
21 dBm |
2 |
COMPONENT |
5,26 |
MOT CASE 301AW-02 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-10 Cel |
1805 MHz |
1880 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.25 dBm |
135 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
24.3 dB |
-20 Cel |
5 MHz |
50 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
2 dBm |
50 ohm |
85 Cel |
35.5 dB |
-20 Cel |
LOW NOISE |
880 MHz |
915 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
34.5 dB |
-20 Cel |
5 MHz |
65 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
18 dBm |
1.5 |
1150 mA |
COMPONENT |
26 |
MOT CASE 301AY-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
27.1 dB |
-20 Cel |
1805 MHz |
1880 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
110 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
25 dB |
-20 Cel |
5 MHz |
65 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
30 dBm |
10 |
COMPONENT |
50 ohm |
150 Cel |
31.5 dB |
TIN |
e3 |
850 MHz |
940 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
THROUGH HOLE MOUNT |
7 |
1 |
17 dBm |
2 |
COMPONENT |
5,26 |
50 ohm |
85 Cel |
29 dB |
-30 Cel |
1930 MHz |
1990 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
HYBRID |
1 |
20 dBm |
2 |
COMPONENT |
28 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
24.5 dB |
-20 Cel |
1930 MHz |
1990 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
27 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
1003 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
110 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
30 dB |
-20 Cel |
5 MHz |
65 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
2 dBm |
50 ohm |
85 Cel |
35.5 dB |
-20 Cel |
LOW NOISE |
880 MHz |
915 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
2 |
30 dBm |
10 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
MATTE TIN |
e3 |
2500 MHz |
2700 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
28 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
1900 MHz |
2000 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
21 dB |
-20 Cel |
GOLD |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
1003 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
TIN |
e3 |
1030 MHz |
1090 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
28 |
MOT CASE 301AP-02 |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
1900 MHz |
2000 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
2 dBm |
50 ohm |
85 Cel |
35.5 dB |
-20 Cel |
LOW NOISE |
880 MHz |
915 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
24.3 dB |
-20 Cel |
5 MHz |
50 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
26.5 dB |
-20 Cel |
GOLD |
LOW NOISE |
e4 |
40 MHz |
1003 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
18 dBm |
1.5 |
1450 mA |
COMPONENT |
26 |
MOT CASE 301AY-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
27.5 dB |
-20 Cel |
1900 MHz |
2000 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
1 |
20 dBm |
2 |
COMPONENT |
28 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
23.7 dB |
-20 Cel |
2110 MHz |
2170 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
30 dB |
-20 Cel |
5 MHz |
65 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
25 dB |
-20 Cel |
5 MHz |
65 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
26 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29.5 dB |
-20 Cel |
1800 MHz |
1900 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
110 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
22.1 dB |
-20 Cel |
5 MHz |
65 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
110 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
34.5 dB |
-20 Cel |
5 MHz |
65 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
HYBRID |
16 dBm |
2 |
COMPONENT |
5,26 |
MOT CASE 301AW-02 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-10 Cel |
1805 MHz |
1880 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
1.5 |
560 mA |
COMPONENT |
28 |
MOT CASE 301-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
16.25 dB |
-20 Cel |
860 MHz |
900 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
28 dBm |
5 |
COMPONENT |
50 ohm |
28.5 dB |
TIN |
USABLE AT 1750 TO 2050 MHZ |
e3 |
1880 MHz |
2100 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
COMPONENT |
75 ohm |
100 Cel |
23 dB |
-20 Cel |
40 MHz |
1000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.