NARROW BAND HIGH POWER RF & Microwave Amplifiers 607

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
935322497528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	Tin (Sn)		e3	3400 MHz	3800 MHz
935316291528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	Tin (Sn)		e3	1400 MHz	2200 MHz
935361937528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	Tin (Sn)		e3	2400 MHz	2500 MHz
MW7IC2750NR1	NXP Semiconductors	NARROW BAND HIGH POWER						30 dBm	10		COMPONENT			50 ohm			24 dB		Matte Tin (Sn)		e3	2500 MHz	2700 MHz
935343961528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	Tin (Sn)		e3	2400 MHz	3100 MHz
MW7IC2240NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	5		COMPONENT			50 ohm		150 Cel	28 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
MW7IC3825NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	45 dBm	10		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)		e3	3400 MHz	3600 MHz
935316208528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
935323877528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	Tin (Sn)		e3	3400 MHz	3800 MHz
MW7IC2220GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
MW7IC930GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
MMG3014N	NXP Semiconductors	NARROW BAND HIGH POWER							5		COMPONENT			50 ohm			15 dB					2110 MHz	2170 MHz
935373851528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
MHL21336NN	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
935318716528	NXP Semiconductors	NARROW BAND HIGH POWER																	Tin (Sn)		e3
MW7IC18100NR1	NXP Semiconductors	NARROW BAND HIGH POWER							5		COMPONENT			50 ohm			27 dB		Matte Tin (Sn)		e3	1805 MHz	2050 MHz
MW7IC2240NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5	420 mA	COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB		TIN		e3	2000 MHz	2200 MHz
MW7IC2220NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
MW7IC3825GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	45 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)		e3	3400 MHz	3600 MHz
MW7IC2220NBR1,528	NXP Semiconductors	NARROW BAND HIGH POWER
PTMA210452ELV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER						25 dBm	10		MODULE			50 ohm			26.5 dB					1900 MHz	2200 MHz
PTMA180402M-40W	Infineon Technologies	NARROW BAND HIGH POWER
PTMA180402FL-40W	Infineon Technologies	NARROW BAND HIGH POWER
PTMA210152MV1R500AUMA1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			27.5 dB					1800 MHz	2200 MHz
PTMC210404MDV1R5XUMA1	Infineon Technologies	NARROW BAND HIGH POWER
PTH32003	Infineon Technologies	NARROW BAND HIGH POWER							1.5		COMPONENT			50 ohm			23 dB					1930 MHz	1990 MHz
PTMA180402ELV1R50	Infineon Technologies	NARROW BAND HIGH POWER
PTMA180402ELV1	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1					28	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
PTMA210452FLV1R250	Infineon Technologies	NARROW BAND HIGH POWER
CGY96	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			3		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		32.5 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
PTH31042	Infineon Technologies	NARROW BAND HIGH POWER							1.5		COMPONENT			50 ohm		90 Cel	11 dB					1930 MHz	1990 MHz
PTMA210152MV1R500AUMA1/SAMPLE	Infineon Technologies	NARROW BAND HIGH POWER
PTMA180402EL-40W	Infineon Technologies	NARROW BAND HIGH POWER
PTMA210452EL-45W	Infineon Technologies	NARROW BAND HIGH POWER
PTMA080304M	Infineon Technologies	NARROW BAND HIGH POWER						11.5 dBm	10		COMPONENT			50 ohm			29.5 dB		MATTE TIN		e3	700 MHz	1000 MHz
CGY99	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	10		GAAS			2		COMPONENT	2.7/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		30 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
CGY0918	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5,-5	SOP16,.35,32		RF/Microwave Amplifiers		28 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	1785 MHz
PTMA180402M	Infineon Technologies	NARROW BAND HIGH POWER							3		COMPONENT			50 ohm			29.5 dB		Matte Tin (Sn)		e3	1800 MHz	2000 MHz
PTH32002	Infineon Technologies	NARROW BAND HIGH POWER							1.5		MODULE			50 ohm		85 Cel	26 dB	-20 Cel				1805 MHz	1880 MHz
PTMA180402FLV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER
PTMA210152MV1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm	RF/Microwave Amplifiers		27.5 dB					1800 MHz	2200 MHz
CGY98	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS			2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
PTMA180402MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER							10		COMPONENT			50 ohm			29.5 dB		Tin (Sn)		e3	1800 MHz	2100 MHz
PTMA210152MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			27.5 dB					1800 MHz	2200 MHz
PTMA210152M	Infineon Technologies	NARROW BAND HIGH POWER						15 dBm	10		COMPONENT			50 ohm			27.5 dB		MATTE TIN		e3	1800 MHz	2200 MHz
CGY93P	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		20 dBm	2.2		COMPONENT	3.5	SOP16,.35,32		RF/Microwave Amplifiers		29 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
PTMA210452FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
PTMA210452FL	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1	25 dBm	10		MODULE	28	MODULE,8LEAD,.6	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.