GAAS RF & Microwave Amplifiers 1,087

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHW8227	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW9186	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHW8227A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS				440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW9189	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
MMG2001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MHW9207A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	20.6 dB	-20 Cel				47 MHz	870 MHz
MHW8267A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW9227A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW8247A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	24.4 dB	-20 Cel				47 MHz	870 MHz
MHW8207A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS				440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	20.6 dB	-20 Cel				47 MHz	870 MHz
MHW9247	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	24.4 dB	-20 Cel				40 MHz	870 MHz
MHW9247A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	24.4 dB	-20 Cel				40 MHz	870 MHz
MHW9227	NXP Semiconductors	WIDE BAND HIGH POWER				GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW9188A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW9146	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			260 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	1 dB	-20 Cel				40 MHz	870 MHz
MHW9186A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHW9189A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW9187	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.4 dB	-20 Cel				40 MHz	870 MHz
MHW9267A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
CGD987HCI,112	NXP Semiconductors				PLASTIC/EPOXY	GAAS	1			460 mA		24	SOT-115J		RF/Microwave Amplifiers
MHW9188	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
935311653147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB					450 MHz	3800 MHz
CGY59	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					COMPONENT	3/5	TSOP5/6,.11,37		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
CGY31	Infineon Technologies			4	METAL	GAAS				200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
CGY96	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			3		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		32.5 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
CGY60	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				9 mA	COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		17 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	200 MHz	2500 MHz
CGB91	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			5		COMPONENT	3.7	LCC24,.17X.14,20	50 ohm	RF/Microwave Amplifiers	110 Cel	25 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
CGY99	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	10		GAAS			2		COMPONENT	2.7/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		30 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
CGY0918	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5,-5	SOP16,.35,32		RF/Microwave Amplifiers		28 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	1785 MHz
CGY353	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		17 dBm			COMPONENT	7	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		21 dB		Tin/Lead (Sn/Pb)		e0	3425 MHz	3450 MHz
CGY41S	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY98	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS			2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
CGY50	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		16 dBm		80 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	7.5 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	100 MHz	3000 MHz
CGY41ES	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY93P	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		20 dBm	2.2		COMPONENT	3.5	SOP16,.35,32		RF/Microwave Amplifiers		29 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
CGY52	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	GAAS					COMPONENT	3/4.5	SO7,.28		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	1800 MHz
CGB191	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			5		COMPONENT	3.7	LCC24,.17X.14,20	50 ohm	RF/Microwave Amplifiers	110 Cel	24 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1850 MHz	1910 MHz
CGY41H	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY94	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS			2		COMPONENT	3/5	SOP14(UNSPEC)	50 ohm	RF/Microwave Amplifiers		27 dB		Tin/Lead (Sn/Pb)		e0
CGY63	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		15 dBm	2		COMPONENT	3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGB240	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAAS	1	10 dBm	6	150 mA	COMPONENT	2/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		23 dB					2400 MHz	2500 MHz
CGY62	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				175 mA	COMPONENT	3/4.5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		18 dB		Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
CGY41P	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGM1900C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				1850 MHz	1910 MHz
CGM800C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				824 MHz	849 MHz
CGY0819	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	1910 MHz
T485B_MPA_1	Infineon Technologies	WIDE BAND LOW POWER				GAAS				72 mA	COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		13 dB					35000 MHz	38000 MHz
CGY40	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS			2	80 mA	COMPONENT	4.5	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	80 Cel		-40 Cel				100 MHz	1800 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.