GAAS RF & Microwave Amplifiers 1,087

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC772LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					4	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TUNGSTEN NICKEL GOLD
HMC561LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	21000 MHz
HMC372LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	700 MHz	1000 MHz
HMC462LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD		e0
HMC308ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel				800 MHz	3800 MHz
HMC633LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	5 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL		e4	5500 MHz	17000 MHz
HMC413QS16G	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3.6/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1600 MHz	2200 MHz
HMC619LP5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	27 dBm			COMPONENT	12	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	150 Cel	9.5 dB	-55 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	10000 MHz
HMC441LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			115 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC591LP5TR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					7	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC441LM1RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm		85 Cel	11 dB	-40 Cel				7000 MHz	15500 MHz
ADL5570ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1		10		COMPONENT	3.5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel	Matte Tin (Sn)		e3	2300 MHz	2400 MHz
HMC311SC70	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	8000 MHz
HMC591LP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6000 MHz	9500 MHz
HMC356LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	350 MHz	550 MHz
SPM2001A	Onsemi		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1			70 mA		3	TSOP6,.11,37		RF/Microwave Amplifiers
SPM0101	Onsemi		SURFACE MOUNT	5		GAAS				50 mA		3	TSOP5/6,.11,37		RF/Microwave Amplifiers
MRFIC0930DMR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		12 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers	70 Cel	17.5 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
CGY2105ATS	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	2			144 mA	COMPONENT	+-5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	14.6 dB	-40 Cel		LOW NOISE		1710 MHz	1910 MHz
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
MRFIC1856R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	15 dBm	10		COMPONENT	-4.4,4.8	TSSOP20,.25		RF/Microwave Amplifiers	85 Cel	29 dB	-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ	e0	824 MHz	849 MHz
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
CGY2014TT	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	10 dBm		3000 mA	COMPONENT	3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
MRFIC1859R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	2	12 dBm	6		COMPONENT	3.6	TQFP32,.28SQ	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
MRFIC1808	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		5.5 mA	COMPONENT	3	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2100 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
CGY2011G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
MMG1001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
MRFIC0930R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		12 mA	COMPONENT	2.8	SOP8,.25		RF/Microwave Amplifiers	70 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
SA2411DH	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1				COMPONENT	3	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	2400 MHz	2500 MHz
CGY2023G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm			COMPONENT	3.3	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MMG1001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
CGY2014ATW	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	10 dBm		300 mA	COMPONENT	2.8,3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
CGY2013G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm		3 mA	COMPONENT	3.3	QFP48,.35SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
CGY2032BTS	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		800 mA	COMPONENT	3.2	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				1880 MHz	1900 MHz
CGY2010G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm		1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MRFIC0970	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	1					3.2	LCC20,.16SQ,20		RF/Microwave Amplifiers
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
MMM5063	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS	1	11 dBm	10		COMPONENT	1.8,32.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				880 MHz	915 MHz
SA2410	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS					COMPONENT	3.3/5	QFP32,.35SQ,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
MHW9236	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			270 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	23 dB	-20 Cel				40 MHz	870 MHz
MHW9206	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			260 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.6 dB	-20 Cel				47 MHz	870 MHz
MHW8188A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS				440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MMG2001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MHW9267	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.