Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
0 MHz |
1000 MHz |
||||||||
|
Renesas Electronics |
PLASTIC/EPOXY |
GAAS |
1 |
420 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
GAAS |
275 mA |
8 |
DIE OR CHIP |
RF/Microwave Amplifiers |
180 Cel |
|||||||||||||||||||||
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
2.7,3.2 |
SOLCC16,.1,16 |
RF/Microwave Amplifiers |
90 Cel |
-30 Cel |
||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
300 mA |
+-5 |
FL8,.2FL |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
70 mA |
3 |
SOLCC6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
40 MHz |
870 MHz |
||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
265 mA |
COMPONENT |
3 |
LCC12,.08SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
2400 MHz |
2500 MHz |
||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
360 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
40 MHz |
870 MHz |
||||||||
|
Renesas Electronics |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
20 mA |
3 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
Renesas Electronics |
GAAS |
MIL-STD-883 Class S (Modified) |
275 mA |
8 |
DIE OR CHIP |
RF/Microwave Amplifiers |
180 Cel |
||||||||||||||||||||
Renesas Electronics |
GAAS |
MIL-STD-883 Class S (Modified) |
440 mA |
9 |
DIE OR CHIP |
RF/Microwave Amplifiers |
180 Cel |
||||||||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
375 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
||||||||||||||||||
Renesas Electronics |
GAAS |
MIL-STD-883 Class S (Modified) |
300 mA |
12 |
DIE OR CHIP |
RF/Microwave Amplifiers |
180 Cel |
||||||||||||||||||||
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
GAAS |
1 |
25 dBm |
1.67 |
900 mA |
COMPONENT |
9 |
DIE OR CHIP |
50 ohm |
150 Cel |
8 dB |
HIGH RELIABILITY |
10 MHz |
26500 MHz |
||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
80 mA |
5 |
QFL8,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
3.6 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Renesas Electronics |
CERAMIC |
GAAS |
100 mA |
4 |
FLANGE,.56X.19,LL |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
|||||||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
140 mA |
3.3 |
LCC12,.1SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
|
Renesas Electronics |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
22 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
40 MHz |
1000 MHz |
||||||||
Renesas Electronics |
PLASTIC/EPOXY |
GAAS |
395 mA |
24 |
MOT CASE 714Y-02 |
RF/Microwave Amplifiers |
|||||||||||||||||||||
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
150 mA |
3.3 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
60 mA |
3 |
SSOP8,.2 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
|
Renesas Electronics |
PLASTIC/EPOXY |
GAAS |
1 |
325 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
375 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
||||||||||||||||||
Renesas Electronics |
GAAS |
300 mA |
12 |
DIE OR CHIP |
RF/Microwave Amplifiers |
180 Cel |
|||||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
370 mA |
5.8,-3.5 |
SMSIP5/6H,.5 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
GAAS |
143 mA |
8,-5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
|||||||||||||||||||
Renesas Electronics |
CERAMIC |
GAAS |
100 mA |
4 |
FLANGE MT,.56X.19 |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
|||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
+-5 |
QFL16,.25SQ |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
200 mA |
3 |
SSOP8,.2 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
460 mA |
4.6,-3.3 |
SMSIP5/6H,.5 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
4 |
CERAMIC |
GAAS |
180 mA |
8 |
SL,4LEAD,.18SQ |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAAS |
3 |
3.2 |
LCC20,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||||
Renesas Electronics |
PLASTIC/EPOXY |
GAAS |
1 |
240 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
||||||||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
385 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
22.5 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
40 MHz |
1000 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
15 dBm |
60 mA |
COMPONENT |
+-5 |
QFL8,.15SQ |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
14 dB |
-50 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
50 MHz |
3000 MHz |
|||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
30 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
90 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
METAL |
GAAS |
3 |
NEC,CASE T-20 |
RF/Microwave Amplifiers |
70 Cel |
-50 Cel |
||||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
60 mA |
8 |
FLNG,.2"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
90 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
240 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
60 mA |
8 |
FLNG,.2"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
90 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
240 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
190 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
110 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
|||||||||||||||||||
Littelfuse |
CERAMIC |
GAAS |
90 mA |
8 |
FLNG,.4"H.SPACE |
RF/Microwave Amplifiers |
105 Cel |
-55 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.