GAAS RF & Microwave Amplifiers 1,087

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGY196	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		20 dBm	20		COMPONENT	3.3/5	TSOP8,.1,30/24	50 ohm	RF/Microwave Amplifiers		27 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	3500 MHz
CGY191	Infineon Technologies		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS						3.5	SOP16,.35,32		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
CGY121A	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY120	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY81	Infineon Technologies		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS						3.5	SOP16,.35,32		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
CGY184	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			1.8		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	40 dB		Tin/Lead (Sn/Pb)		e0
CGY121B	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
T626_MPA2_W	Infineon Technologies	WIDE BAND LOW POWER				GAAS					COMPONENT	3.4,3.6	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	95 Cel	8 dB	-40 Cel				76000 MHz	77000 MHz
CGY195	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		20 dBm	2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		24 dB					800 MHz	3000 MHz
CGY180	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS		10 dBm	2.5		COMPONENT	3	SOP14(UNSPEC)	50 ohm	RF/Microwave Amplifiers		28 dB		Tin/Lead (Sn/Pb)		e0
CGY197	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		20 dBm	20		COMPONENT	2/6	SOP8(UNSPEC)	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	35000 MHz
CGY181	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS		25 dBm	1.9		COMPONENT	3/5	SOP14(UNSPEC)	50 ohm	RF/Microwave Amplifiers		20.5 dB		Tin/Lead (Sn/Pb)		e0	1750 MHz	1750 MHz
TMD1415-2B	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1					7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD0507-2A	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	20 dBm	3		MODULE	10,-5	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				5100 MHz	7200 MHz
TMD0507-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS				2000 mA		10	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
TMD0305-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	1900 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	3400 MHz	5100 MHz
TMD1013-1	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	15 dBm	3		MODULE	10,-5	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				10000 MHz	13300 MHz
TMD3438-1	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS						7.5,-5	QFL24,.37SQ		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S9751A	Toshiba	NARROW BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1900 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S9751B	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1500 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S9747	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				350 mA		6	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S-AU55	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		12 dBm	3	390 mA	COMPONENT	5.5,5.8	SMSIP5/6H,.5	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
TMD1414-02B	Toshiba	NARROW BAND LOW POWER			METAL	GAAS	1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
TMD2121-3A	Toshiba	NARROW BAND HIGH POWER			CERAMIC	GAAS				1200 mA		10	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TG2006F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		10 dBm	20	150 mA	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel				1895 MHz	1918 MHz
S9751	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1400 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
TMD1414-02C	Toshiba	NARROW BAND LOW POWER			METAL	GAAS	1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
TMD1414-02	Toshiba	NARROW BAND LOW POWER			METAL	GAAS				300 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TG2005F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			180 mA		-1.3,3	TSSOP8,.16		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TDM0305-2	Toshiba				CERAMIC	GAAS	1			1900 mA		10,-5	FLNG,.59"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel
TMD1414-1	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1000 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
S9750	Toshiba	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		13 dBm		400 mA	COMPONENT	6	FL8,.32FL	50 ohm	RF/Microwave Amplifiers	80 Cel	19 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0
TG2006FTE12L	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS				150 mA		3	TSSOP8,.16		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
TMD5872-2	Toshiba	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1	10 dBm	3	1600 mA	MODULE	10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel				5800 MHz	7200 MHz
TMD0708-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	2000 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				7100 MHz	8500 MHz
TMD5872-2-321	Toshiba	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1					10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel
TMD1414-1B	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-1C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-2	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1800 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
UPG100A	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	GAAS				60 mA		+-5	QFL8,.15SQ		RF/Microwave Amplifiers	125 Cel		-65 Cel	Tin/Lead (Sn/Pb)		e0
MC-7883-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			360 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPG102B-1	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE MT,.56X.19		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG101B	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	GAAS		15 dBm		143 mA	COMPONENT	8,-5	QFL8,.15SQ	50 ohm	RF/Microwave Amplifiers	80 Cel	12 dB	-50 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	3000 MHz
MC-7832-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPG102K-2	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE,.56X.19,LL		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG105B	Renesas Electronics				CERAMIC	GAAS				86 mA		+-5	FLANGE MT,.56X.19		RF/Microwave Amplifiers
UPG110B	Renesas Electronics		SURFACE MOUNT	4	CERAMIC	GAAS				180 mA		8	SL,4LEAD,.18SQ		RF/Microwave Amplifiers
UPG2134TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1			35 mA		3,3.5	TSSOP6,.08		RF/Microwave Amplifiers	90 Cel		-30 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.