Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
30 |
260 |
3700 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
55 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
14100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
850 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
450 V |
11000 ns |
-55 Cel |
10 V |
25000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
250 W |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
360 V |
12 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
2800 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
250 W |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
360 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
2800 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
2800 ns |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
130 W |
10 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
-40 Cel |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
2780 ns |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
30 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AB |
e3 |
4450 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
18000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.4 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL |
TO-220AB |
e0 |
8000 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
166 W |
26.9 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.75 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
3000 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
3700 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
200 W |
46 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
13600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2800 ns |
|||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
5700 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
15 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
UNSPECIFIED |
1 |
19000 ns |
UNCASED CHIP |
175 Cel |
SILICON |
380 V |
TIN LEAD |
UPPER |
X-XUUC-N |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
6000 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
18 V |
1.9 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
5200 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
e3 |
6500 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
88 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
6500 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
187 W |
44 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
7040 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
12 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-262AA |
e3 |
2350 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
18 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
18 V |
1.9 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
5200 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
18500 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
440 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
6500 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
6500 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
187 W |
44 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7040 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2350 ns |
||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
235 |
5700 ns |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
18500 ns |
2 |
SMALL OUTLINE |
SILICON |
390 V |
Tin/Lead (Sn80Pb20) |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
6500 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
15 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
UNSPECIFIED |
1 |
19000 ns |
UNCASED CHIP |
175 Cel |
SILICON |
440 V |
TIN LEAD |
UPPER |
X-XUUC-N |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
6000 ns |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.3 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
235 |
6500 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
136 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
20500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
22 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
235 |
6000 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
320 V |
15 V |
2.4 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e0 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2700 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
365 V |
15 V |
2 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
2450 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
400 V |
15 V |
2.1 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
6500 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
6500 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
14000 ns |
GULL WING |
RECTANGULAR |
1 |
7000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
435 V |
15 V |
2.3 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
11000 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
5700 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
430 V |
18 V |
1.9 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
5200 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
20500 ns |
3 |
FLANGE MOUNT |
SILICON |
380 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
6000 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
5700 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
20500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
NOT SPECIFIED |
NOT SPECIFIED |
6000 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
e3 |
6500 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
165 W |
19 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
6000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
22000 ns |
25000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
22 V |
2 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
6500 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.