SINGLE WITH BUILT-IN DIODE AND RESISTOR Insulated Gate Bipolar Transistors (IGBT) 138

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MGB19N35CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	165 W	19 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	22000 ns	25000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V			22 V		2 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
NGB8206NTF4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V						TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			6500 ns
NGD15N41CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5700 ns
NGB8206NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
NGB8204NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5200 ns
NGD18N45CLBT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	9000 ns		GULL WING	RECTANGULAR	1	7000 ns	5400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	500 V			18 V		1.9 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR				e3	30	260	2920 ns
NGP15N41CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	15500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3		260	5700 ns
NGB8204NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
MGP15N40CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		THROUGH-HOLE	RECTANGULAR	1	20000 ns	20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e3		260	6000 ns
MGP15N40CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e0		235	6000 ns
NGB8202NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
FGB3245G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				3500 ns	AEC-Q101
NGB8206NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e3		260	6500 ns
NGB15N41CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5700 ns
NGB8206NSL3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE			SILICON	390 V						TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			6500 ns
PCGA3040G2F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	41 A	UNSPECIFIED	AUTOMOTIVE IGNITION		1.25 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP		175 Cel	SILICON	400 V		-55 Cel	10 V		2.2 V		UPPER	R-XUUC-N2										AEC-Q101
NGD8201ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	400 V			15 V		2.1 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	6500 ns
NGD8201NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	14000 ns		GULL WING	RECTANGULAR	1	7000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			15 V		2.3 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
NGB8206N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
MGB15N35CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE			SILICON	380 V							SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING			NOT SPECIFIED	NOT SPECIFIED	6000 ns
MGP15N35CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V			22 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e0		235	6000 ns
NGD8205NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
NGD18N40CLBT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	5200 ns
MGB15N40CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V			22 V		2.1 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e0	30	235	6000 ns
NGB18N40CLBT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			18 V		1.9 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5200 ns
ISL9V2540S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	166.7 W	15.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	430 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2780 ns
ISL9V3036S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
FGD3245G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-55 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	3500 ns	AEC-Q101
ISL9V2040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2780 ns
ISL9V5036S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
ISL9V3036D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
ISL9V5045S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
ISL9V3040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	450 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
ISL9V5045S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
ISL9V5045S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V2040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2780 ns
FGD3245G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3500 ns	AEC-Q101
ISL9V5036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT		175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
FGD3050G2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2500 ns
ISL9V3040S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	IN-LINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
ISL9V3036D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2800 ns
ISL9V3040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V3036P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	7600 ns	3	FLANGE MOUNT		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2800 ns
FGD3050G2_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2500 ns
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.9 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
ISL9V3040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns
ISL9V2040P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		2.3 V	THROUGH-HOLE	RECTANGULAR	1		6000 ns	3	FLANGE MOUNT		175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2780 ns
ISL9V3036D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	7600 ns	2	SMALL OUTLINE		175 Cel	SILICON	350 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2800 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.