Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
250 W |
46 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
13600 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
420 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
2800 ns |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
130 W |
10 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
-40 Cel |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2780 ns |
||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
200 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
16100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
382 V |
2.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
245 |
1220 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
15900 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
375 V |
2 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
e3 |
2900 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-252 |
e3 |
30 |
260 |
4450 ns |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
17800 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
375 V |
2.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AB |
e3 |
30 |
245 |
860 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
30 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
22200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
4450 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
176 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
37000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
12 V |
2.3 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
7600 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
425 V |
-55 Cel |
16 V |
2.6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
BULK: 1000 |
TO-263AB |
e3 |
245 |
4450 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
30 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
22200 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-262AA |
e3 |
4450 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
125 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
22200 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-251 |
e3 |
4450 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
55 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
14100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
850 ns |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
15900 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
325 V |
2 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-262AA |
e0 |
2900 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
200 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
16100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
382 V |
2.4 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
1220 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
15900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
325 V |
2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263 |
e3 |
2900 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
15900 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
325 V |
2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263 |
e3 |
2900 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
12000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
245 |
1570 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
17800 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
375 V |
2.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AB |
e3 |
30 |
245 |
860 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
100 W |
14 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e3 |
30 |
245 |
5400 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
100 W |
14 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e3 |
5400 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
55 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
14100 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-251AA |
e3 |
850 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
ESD PROTECTED |
TO-263AB |
e3 |
2900 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
425 V |
-55 Cel |
16 V |
2.6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
4450 ns |
AEC-Q101 |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
176 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
37000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
12 V |
2.3 V |
MATTE TIN |
DUAL |
R-PDSO-G2 |
1 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AA |
e3 |
30 |
245 |
7600 ns |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
37000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
380 V |
DUAL |
R-PDSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
7600 ns |
||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
176 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
37000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
12 V |
2.3 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
e3 |
7600 ns |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
200 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
2900 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
SILICON |
370 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-262AA |
e0 |
3700 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-262AA |
e3 |
3700 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
18 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
SINGLE |
R-PSSO-G2 |
VOLTAGE CLAMPING |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
SILICON |
370 V |
SINGLE |
R-PSSO-G2 |
1 |
LOW SATURATION VOLTAGE |
TO-263AB |
3700 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
3700 ns |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
18 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
SILICON |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
VOLTAGE CLAMPING |
e3 |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
3700 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
370 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
3700 ns |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
17000 ns |
-55 Cel |
15 V |
25000 ns |
1.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
9500 ns |
AEC-Q101 |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
417 W |
92 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1395 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
3600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
730 ns |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
115 W |
18 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
430 V |
11000 ns |
-55 Cel |
18 V |
25000 ns |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
5200 ns |
AEC-Q101 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
107 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
15500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
17000 ns |
-55 Cel |
15 V |
25000 ns |
1.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
9500 ns |
AEC-Q101 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.