Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
GT30J110SRA,S1E	Toshiba
GT50N324(Q)	Toshiba
GT30J122A(STA1,E,D	Toshiba
GT60PR21,STA1F	Toshiba
GT30J341,STA1E	Toshiba
GT40J322(Q)	Toshiba
GT50J123,STA1E(S	Toshiba
GT20J341,S4X	Toshiba
GT40RR21(STA1,E	Toshiba
GT30J65MRB	Toshiba
MG400J2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		400 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT			150 Cel	SILICON	600 V					UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG400J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		8	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-X8		Not Qualified	HIGH SPEED
MG400J1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	600 V								Not Qualified
MG400J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		8	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-X8		Not Qualified
MG400J2YS61A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2160 W	400 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified
MG400Q2YS70A	Toshiba				3750 W	400 A				2.7 V			1					Insulated Gate BIP Transistors		100 Cel		1200 V		20 V
MG400J1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	1	350 ns		4	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-X4		Not Qualified	HIGH SPEED
MG400J1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	600 V								Not Qualified
MG400J1US46	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	600 V								Not Qualified
MG400Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		4	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X4		Not Qualified
MG400Q1US21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X5		Not Qualified
MG400Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		400 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG400J1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		500 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V					UPPER	R-PUFM-X4	ISOLATED	Not Qualified				400 ns
MG400J1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	600 V								Not Qualified
MG400H1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	4	FLANGE MOUNT				SILICON	500 V					UPPER	R-PUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			1100 ns
MG400N1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	1000 V								Not Qualified
MG400Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2400 W	400 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors	2400 W	150 Cel	SILICON	1200 V		20 V		6 V	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED
MG400V2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	4300 W	400 A	UNSPECIFIED	MOTOR CONTROL		3.4 V	UNSPECIFIED	RECTANGULAR	2		1300 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified				550 ns
MG400Q1US65H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2600 W	400 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1		600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified				100 ns
MG400J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1800 W	400 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors	1800 W	150 Cel	SILICON	600 V		20 V		8 V	UPPER	R-XUFM-X8	ISOLATED	Not Qualified	HIGH SPEED			400 ns
MG400Q1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3000 W	520 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1	300 ns	600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	3000 W	150 Cel	SILICON	1200 V		20 V		6 V	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	200 ns
MG400N1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	1000 V								Not Qualified
MG400J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	400 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	1500 W	150 Cel	SILICON	600 V	400 ns	20 V	400 ns	8 V	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	200 ns
MG400Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X4		Not Qualified	HIGH SPEED
MG400Q1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED
MG400Q1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED
MG400J1US21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			400 A							1								SILICON	600 V								Not Qualified
MG400J1US45	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		400 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		4	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-X4		Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.