Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
GT40T101	Toshiba	N-CHANNEL	SINGLE	NO	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL	1000 ns	5 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1500 V		25 V		6 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MIG25Q804H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	17	FLANGE MOUNT			150 Cel	SILICON	1200 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING		e0			150 ns
MG150Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X7		Not Qualified
MG100Q2YS50	Toshiba			NO	660 W	150 A	UNSPECIFIED			3.6 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-XUFM-X7		Not Qualified
MG100Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	670 W	100 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	670 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED
MIG20J806EA	Toshiba				90 W	25 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MP7001	Toshiba	N-CHANNEL	SINGLE	NO	37 W	30 A	PLASTIC/EPOXY			2.7 V	THROUGH-HOLE	RECTANGULAR	1		510 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T7		Not Qualified						590 ns
MG50J1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	3.5 V	UNSPECIFIED	RECTANGULAR	1	350 ns	780 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	700 ns
MG600J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT			150 Cel	SILICON	600 V						UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED			NOT SPECIFIED	240
MG100H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					800 ns
GT30J322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			TIN LEAD	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED		e0			300 ns
MG150J1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN CONFIGURABLE DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V	300 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	150 ns
MG50Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X7		Not Qualified
MG180V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		180 A	PLASTIC/EPOXY	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	8	FLANGE MOUNT		1800 W	150 Cel	SILICON	1700 V		20 V		8 V		UPPER	R-PUFM-X8	ISOLATED	Not Qualified	HIGH SPEED					100 ns
5961-01-536-6695	Toshiba	N-CHANNEL		NO	150 W	15 A			600 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
GT25H101	Toshiba	N-CHANNEL	SINGLE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		600 ns	3	FLANGE MOUNT				SILICON	500 V					TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING		e0			500 ns
MG75J1SB11	Toshiba	N-CHANNEL	SINGLE			75 A							1								SILICON	600 V									Not Qualified
GT8N101	Toshiba	N-CHANNEL	SINGLE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		600 ns	3	FLANGE MOUNT				SILICON	1000 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING					200 ns
MG100J7KS50	Toshiba			NO	300 W	100 A	UNSPECIFIED			2.5 V	UNSPECIFIED	RECTANGULAR	1			22	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				UPPER	R-XUFM-X22		Not Qualified
GT15J341,S4X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	ISOLATED			TO-220AB				180 ns
MG150Q1ZS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
GT40Q322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	39 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	210 ns	430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		25 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e0			260 ns
MG30J6ES11	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			30 A							6								SILICON	600 V									Not Qualified
GT50J322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			300 ns
MIG30J906H	Toshiba	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	24	FLANGE MOUNT			150 Cel	SILICON	600 V						UPPER	R-XUFM-P24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	250 ns
MG500Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2400 W	500 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns	800 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2900 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG200Q1ZS11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG100J6ES91	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			100 A							6								SILICON	600 V									Not Qualified
MG50Q6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	72 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
MIG50J906E	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG75J1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT			150 Cel	SILICON	600 V						UPPER	R-PUFM-X5		Not Qualified	CHOPPER SWITCH			NOT SPECIFIED	NOT SPECIFIED
MG8N6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1000 V									Not Qualified
MG1500FXF1US63	Toshiba
MG50H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		900 ns	3	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					600 ns
GT40J325	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		500 ns	3	FLANGE MOUNT				SILICON	600 V						SINGLE	R-PSFM-T3								250 ns
MG100H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					800 ns
MG200Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1310 W	200 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified						100 ns
MG360V1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3600 W	360 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	1	1500 ns	1000 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	3600 W	150 Cel	SILICON	1700 V		20 V		8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED					500 ns
MG200J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V									Not Qualified
MG75J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					400 ns
GT10J303	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MG50J6ES11	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V									Not Qualified
MG50N2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1000 V									Not Qualified
GT15Q102	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	560 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	120 ns
MG150J7KS50	Toshiba	N-CHANNEL	COMPLEX	NO	320 W	150 A	PLASTIC/EPOXY	MOTOR CONTROL	300 ns	2.8 V	UNSPECIFIED	RECTANGULAR	7	500 ns		22	FLANGE MOUNT	Insulated Gate BIP Transistors	320 W	150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD	UPPER	R-PUFM-X22	ISOLATED	Not Qualified	HIGH SPEED		e0
GT20D201-O	Toshiba	N-CHANNEL	SINGLE	NO	180 W	20 A	PLASTIC/EPOXY	POWER AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	250 V		20 V		2.4 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e0
MG25N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					400 ns
MG200H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					850 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.